IXFH26N60P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Position :

Single

Qualification Status :

Not Qualified

Tradename :

HiPerFET

Brand :

IXYS

Operating Mode :

ENHANCEMENT MODE

Avalanche Energy Rating (Eas) :

1200 mJ

Width :

5.3mm

Packaging :

Tube

Additional Feature :

AVALANCHE RATED

Power Dissipation :

460W

Transistor Type :

1 N-Channel

Package Shape :

RECTANGULAR

JESD-30 Code :

R-PSFM-T3

Gate to Source Voltage (Vgs) :

30V

Turn-Off Delay Time :

75 ns

Subcategory :

MOSFETs

Package :

Tube

DS Breakdown Voltage-Min :

600 V

Current Rating :

26A

Case Connection :

DRAIN

Number of Pins :

3

Fall Time (Typ) :

21 ns

RoHS :

Details

Voltage - Rated DC :

600V

Reach Compliance Code :

Compliant

Number of Terminations :

3

Surface Mount :

No

JESD-609 Code :

e1

Drain to Source Breakdown Voltage :

600V

Series :

PolarHV™

Transistor Element Material :

SILICON

Number of Channels :

1 Channel

Pin Count :

3

Vgs (Max) :

±30V

Pbfree Code :

yes

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Continuous Drain Current Id :

26A

Base Product Number :

IXFH26

Published :

2006

Power Dissipation (Max) :

460W (Tc)

Polarity/Channel Type :

N-Channel

Qualification :

-

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Factory Lead Time :

30 Weeks

Transistor Application :

SWITCHING

FET Feature :

--

Number of Terminals :

3

Package / Case :

TO-247-3

JEDEC-95 Code :

TO-247AD

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Length :

16.26mm

Package Type :

TO-247

FET Type :

N-Channel

Mounting Type :

Through Hole

Height :

21.46mm

Drain-source On Resistance-Max :

0.27Ohm

Pulsed Drain Current-Max (IDM) :

65A

Power Dissipation-Max :

460W Tc

Continuous Drain Current (ID) :

26A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Temperature :

-55°C~150°C TJ

Channel Type :

N

Mount :

Through Hole

Rds On (Max) @ Id, Vgs :

270m Ω @ 500mA, 10V

Vgs(th) (Max) @ Id :

5V @ 4mA

Manufacturer :

IXYS

Gate Charge (Qg) (Max) @ Vgs :

72nC @ 10V

Transistor Polarity :

N-Channel

Supplier Device Package :

TO-247AD (IXFH)

Configuration :

Single

Turn On Delay Time :

25 ns

Product Category :

MOSFET

Input Capacitance (Ciss) (Max) @ Vds :

4150pF @ 25V

Mounting Style :

Through Hole

Lead Free :

Lead Free

Rise Time :

27ns

Element Configuration :

Single

Minimum Operating Temperature :

-55 °C

Terminal Form :

THROUGH-HOLE

Product Type :

MOSFET

Product Status :

Active

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Number of Elements per Chip :

1

Drain to Source Voltage (Vdss) :

600V

Channel Mode :

Enhancement

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

26A Tc

Maximum Operating Temperature :

+150 °C

FET Technology :

METAL-OXIDE SEMICONDUCTOR