IXFH26N60P
- Mfr.Part #
- IXFH26N60P
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 26A TO247AD
- Stock
- 50
- In Stock :
- 50
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-30 Code :
- R-PSFM-T3
- Manufacturer :
- IXYS
- Product Status :
- Active
- Tradename :
- HiPerFET
- Pin Count :
- 3
- Terminal Position :
- Single
- Additional Feature :
- AVALANCHE RATED
- Supplier Device Package :
- TO-247AD (IXFH)
- DS Breakdown Voltage-Min :
- 600 V
- Reach Compliance Code :
- Compliant
- Polarity/Channel Type :
- N-Channel
- Turn On Delay Time :
- 25 ns
- Product Category :
- MOSFET
- Drain to Source Voltage (Vdss) :
- 600V
- Package :
- Tube
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- JESD-609 Code :
- e1
- JEDEC-95 Code :
- TO-247AD
- Number of Elements :
- 1
- Transistor Polarity :
- N-Channel
- Fall Time (Typ) :
- 21 ns
- Qualification :
- -
- Turn-Off Delay Time :
- 75 ns
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Factory Lead Time :
- 30 Weeks
- Minimum Operating Temperature :
- -55 °C
- Package / Case :
- TO-247-3
- RoHS :
- Details
- Rise Time :
- 27ns
- Element Configuration :
- Single
- Vgs (Max) :
- ±30V
- Number of Pins :
- 3
- Subcategory :
- MOSFETs
- Mounting Style :
- Through Hole
- Package Type :
- TO-247
- Lead Free :
- Lead Free
- Current - Continuous Drain (Id) @ 25°C :
- 26A Tc
- Channel Mode :
- Enhancement
- Current Rating :
- 26A
- Surface Mount :
- No
- Published :
- 2006
- Continuous Drain Current Id :
- 26A
- Input Capacitance (Ciss) (Max) @ Vds :
- 4150pF @ 25V
- FET Feature :
- --
- Continuous Drain Current (ID) :
- 26A
- Drain to Source Breakdown Voltage :
- 600V
- Number of Terminations :
- 3
- Height :
- 21.46mm
- Power Dissipation (Max) :
- 460W (Tc)
- Operating Mode :
- ENHANCEMENT MODE
- RoHS Status :
- ROHS3 Compliant
- Qualification Status :
- Not Qualified
- Power Dissipation-Max :
- 460W Tc
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Pbfree Code :
- yes
- Voltage - Rated DC :
- 600V
- Power Dissipation :
- 460W
- Product Type :
- MOSFET
- Transistor Element Material :
- SILICON
- Rds On (Max) @ Id, Vgs :
- 270m Ω @ 500mA, 10V
- Vgs(th) (Max) @ Id :
- 5V @ 4mA
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Base Product Number :
- IXFH26
- Gate Charge (Qg) (Max) @ Vgs :
- 72nC @ 10V
- Series :
- PolarHV™
- Transistor Type :
- 1 N-Channel
- Mount :
- Through Hole
- Operating Temperature :
- -55°C~150°C TJ
- Number of Elements per Chip :
- 1
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Width :
- 5.3mm
- Channel Type :
- N
- Brand :
- IXYS
- Gate to Source Voltage (Vgs) :
- 30V
- Number of Channels :
- 1 Channel
- Packaging :
- Tube
- Drain-source On Resistance-Max :
- 0.27Ohm
- Transistor Application :
- SWITCHING
- Maximum Operating Temperature :
- +150 °C
- Case Connection :
- DRAIN
- Mounting Type :
- Through Hole
- Length :
- 16.26mm
- Configuration :
- Single
- Number of Terminals :
- 3
- Pulsed Drain Current-Max (IDM) :
- 65A
- Package Shape :
- RECTANGULAR
- FET Type :
- N-Channel
- Terminal Form :
- THROUGH-HOLE
- Avalanche Energy Rating (Eas) :
- 1200 mJ
- Datasheets
- IXFH26N60P

N-Channel Tube 270m Ω @ 500mA, 10V ±30V 4150pF @ 25V 72nC @ 10V 600V TO-247-3
IXFH26N60P Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 1200 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 4150pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 26A.With a drain-source breakdown voltage of 600V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 600V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 75 ns.Peak drain current for this device is 65A, which is its maximum pulsed drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 25 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 600 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 600V.Using drive voltage (10V) reduces this device's overall power consumption.
IXFH26N60P Features
the avalanche energy rating (Eas) is 1200 mJ
a continuous drain current (ID) of 26A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 65A.
a 600V drain to source voltage (Vdss)
IXFH26N60P Applications
There are a lot of IXYS
IXFH26N60P applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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