IXFH26N60P

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Mfr.Part #
IXFH26N60P
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 600V 26A TO247AD
Stock
50
In Stock :
50

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
JESD-30 Code :
R-PSFM-T3
Manufacturer :
IXYS
Product Status :
Active
Tradename :
HiPerFET
Pin Count :
3
Terminal Position :
Single
Additional Feature :
AVALANCHE RATED
Supplier Device Package :
TO-247AD (IXFH)
DS Breakdown Voltage-Min :
600 V
Reach Compliance Code :
Compliant
Polarity/Channel Type :
N-Channel
Turn On Delay Time :
25 ns
Product Category :
MOSFET
Drain to Source Voltage (Vdss) :
600V
Package :
Tube
Drive Voltage (Max Rds On,Min Rds On) :
10V
JESD-609 Code :
e1
JEDEC-95 Code :
TO-247AD
Number of Elements :
1
Transistor Polarity :
N-Channel
Fall Time (Typ) :
21 ns
Qualification :
-
Turn-Off Delay Time :
75 ns
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Factory Lead Time :
30 Weeks
Minimum Operating Temperature :
-55 °C
Package / Case :
TO-247-3
RoHS :
Details
Rise Time :
27ns
Element Configuration :
Single
Vgs (Max) :
±30V
Number of Pins :
3
Subcategory :
MOSFETs
Mounting Style :
Through Hole
Package Type :
TO-247
Lead Free :
Lead Free
Current - Continuous Drain (Id) @ 25°C :
26A Tc
Channel Mode :
Enhancement
Current Rating :
26A
Surface Mount :
No
Published :
2006
Continuous Drain Current Id :
26A
Input Capacitance (Ciss) (Max) @ Vds :
4150pF @ 25V
FET Feature :
--
Continuous Drain Current (ID) :
26A
Drain to Source Breakdown Voltage :
600V
Number of Terminations :
3
Height :
21.46mm
Power Dissipation (Max) :
460W (Tc)
Operating Mode :
ENHANCEMENT MODE
RoHS Status :
ROHS3 Compliant
Qualification Status :
Not Qualified
Power Dissipation-Max :
460W Tc
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Pbfree Code :
yes
Voltage - Rated DC :
600V
Power Dissipation :
460W
Product Type :
MOSFET
Transistor Element Material :
SILICON
Rds On (Max) @ Id, Vgs :
270m Ω @ 500mA, 10V
Vgs(th) (Max) @ Id :
5V @ 4mA
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Base Product Number :
IXFH26
Gate Charge (Qg) (Max) @ Vgs :
72nC @ 10V
Series :
PolarHV™
Transistor Type :
1 N-Channel
Mount :
Through Hole
Operating Temperature :
-55°C~150°C TJ
Number of Elements per Chip :
1
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Width :
5.3mm
Channel Type :
N
Brand :
IXYS
Gate to Source Voltage (Vgs) :
30V
Number of Channels :
1 Channel
Packaging :
Tube
Drain-source On Resistance-Max :
0.27Ohm
Transistor Application :
SWITCHING
Maximum Operating Temperature :
+150 °C
Case Connection :
DRAIN
Mounting Type :
Through Hole
Length :
16.26mm
Configuration :
Single
Number of Terminals :
3
Pulsed Drain Current-Max (IDM) :
65A
Package Shape :
RECTANGULAR
FET Type :
N-Channel
Terminal Form :
THROUGH-HOLE
Avalanche Energy Rating (Eas) :
1200 mJ
Datasheets
IXFH26N60P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFH26N60P from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-247-3, Number of Pins:3, Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, Number of Channels:1 Channel, Mounting Type:Through Hole, IXFH26N60P pinout, IXFH26N60P datasheet PDF, IXFH26N60P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFH26N60P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFH26N60P


N-Channel Tube 270m Ω @ 500mA, 10V ±30V 4150pF @ 25V 72nC @ 10V 600V TO-247-3

IXFH26N60P Overview


Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 1200 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 4150pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 26A.With a drain-source breakdown voltage of 600V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 600V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 75 ns.Peak drain current for this device is 65A, which is its maximum pulsed drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 25 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 600 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 600V.Using drive voltage (10V) reduces this device's overall power consumption.

IXFH26N60P Features


the avalanche energy rating (Eas) is 1200 mJ
a continuous drain current (ID) of 26A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 65A.
a 600V drain to source voltage (Vdss)


IXFH26N60P Applications


There are a lot of IXYS
IXFH26N60P applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
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