IXFH26N50Q
- Mfr.Part #
- IXFH26N50Q
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 26A TO247AD
- Stock
- 2
- In Stock :
- 2
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Polarity/Channel Type :
- N-Channel
- Channel Mode :
- Enhancement
- Supplier Device Package :
- TO-247AD (IXFH)
- Turn-Off Delay Time :
- 55 ns
- Number of Terminals :
- 3
- Moisture Sensitivity Level (MSL) :
- Not Applicable
- Number of Elements :
- 1
- Dual Supply Voltage :
- 500V
- Terminal Position :
- Single
- Case Connection :
- DRAIN
- Termination :
- Through Hole
- Pin Count :
- 3
- Fall Time (Typ) :
- 16 ns
- Base Product Number :
- IXFH26
- Input Capacitance (Ciss) (Max) @ Vds :
- 3900pF @ 25V
- Power Dissipation-Max (Abs) :
- 300 W
- JEDEC-95 Code :
- TO-247AD
- Vgs (Max) :
- ±20V
- Radiation Hardening :
- No
- Transistor Application :
- SWITCHING
- Continuous Drain Current (ID) :
- 26A
- Mounting Type :
- Through Hole
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- FET Feature :
- --
- Product Status :
- Obsolete
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Pulsed Drain Current-Max (IDM) :
- 104 A
- JESD-30 Code :
- R-PSFM-T3
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Current Rating :
- 26A
- Packaging :
- Tube
- Transistor Polarity :
- N-Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Voltage - Rated DC :
- 500V
- Gate to Source Voltage (Vgs) :
- 20V
- Terminal Form :
- THROUGH-HOLE
- Drain to Source Breakdown Voltage :
- 500V
- Number of Terminations :
- 3
- Reach Compliance Code :
- Compliant
- DS Breakdown Voltage-Min :
- 500 V
- Drain to Source Voltage (Vdss) :
- 500V
- Rds On (Max) @ Id, Vgs :
- 200m Ω @ 13A, 10V
- RoHS Status :
- RoHS Compliant
- Manufacturer :
- IXYS Corporation
- Qualification Status :
- Not Qualified
- Threshold Voltage :
- 4V
- Series :
- HiPerFET™
- Factory Lead Time :
- 8 Weeks
- Maximum Operating Temperature :
- + 150 C
- Power Dissipation-Max :
- 300W Tc
- Number of Pins :
- 3
- Power Dissipation (Max) :
- 300W (Tc)
- Transistor Element Material :
- SILICON
- FET Type :
- N-Channel
- Additional Feature :
- AVALANCHE RATED
- Element Configuration :
- Single
- Package Shape :
- RECTANGULAR
- Weight :
- 6g
- Gate Charge (Qg) (Max) @ Vgs :
- 95nC @ 10V
- Vgs(th) (Max) @ Id :
- 4.5V @ 4mA
- Reverse Recovery Time :
- 250 ns
- Package / Case :
- TO-247-3
- Operating Temperature :
- -55°C~150°C TJ
- Current - Continuous Drain (Id) @ 25°C :
- 26A Tc
- Number of Channels :
- 1 Channel
- Power Dissipation :
- 300W
- Nominal Vgs :
- 4.5 V
- REACH SVHC :
- Unknown
- Operating Mode :
- ENHANCEMENT MODE
- Resistance :
- 200mOhm
- Drain-source On Resistance-Max :
- 0.2 Ω
- Package :
- Tube
- Avalanche Energy Rating (Eas) :
- 1500 mJ
- Minimum Operating Temperature :
- - 55 C
- Published :
- 2003
- Mount :
- Through Hole
- Drain Current-Max (Abs) (ID) :
- 26 A
- Surface Mount :
- No
- Pbfree Code :
- yes
- ECCN Code :
- EAR99
- Rise Time :
- 30ns
- Lead Free :
- Lead Free
- Mounting Style :
- Through Hole
- Datasheets
- IXFH26N50Q

N-Channel Tube 200m Ω @ 13A, 10V ±20V 3900pF @ 25V 95nC @ 10V 500V TO-247-3
IXFH26N50Q Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 1500 mJ.The maximum input capacitance of this device is 3900pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 26A.When VGS=500V, and ID flows to VDS at 500VVDS, the drain-source breakdown voltage is 500V in this device.As shown in the table below, the drain current of this device is 26 A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 55 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 104 A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is 4V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 500 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 500V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
IXFH26N50Q Features
the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 26A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 55 ns
based on its rated peak drain current 104 A.
a threshold voltage of 4V
a 500V drain to source voltage (Vdss)
IXFH26N50Q Applications
There are a lot of IXYS
IXFH26N50Q applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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