IXFH26N50Q

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Mfr.Part #
IXFH26N50Q
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 500V 26A TO247AD
Stock
2
In Stock :
2

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Polarity/Channel Type :
N-Channel
Channel Mode :
Enhancement
Supplier Device Package :
TO-247AD (IXFH)
Turn-Off Delay Time :
55 ns
Number of Terminals :
3
Moisture Sensitivity Level (MSL) :
Not Applicable
Number of Elements :
1
Dual Supply Voltage :
500V
Terminal Position :
Single
Case Connection :
DRAIN
Termination :
Through Hole
Pin Count :
3
Fall Time (Typ) :
16 ns
Base Product Number :
IXFH26
Input Capacitance (Ciss) (Max) @ Vds :
3900pF @ 25V
Power Dissipation-Max (Abs) :
300 W
JEDEC-95 Code :
TO-247AD
Vgs (Max) :
±20V
Radiation Hardening :
No
Transistor Application :
SWITCHING
Continuous Drain Current (ID) :
26A
Mounting Type :
Through Hole
Configuration :
SINGLE WITH BUILT-IN DIODE
FET Feature :
--
Product Status :
Obsolete
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Pulsed Drain Current-Max (IDM) :
104 A
JESD-30 Code :
R-PSFM-T3
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Current Rating :
26A
Packaging :
Tube
Transistor Polarity :
N-Channel
Drive Voltage (Max Rds On,Min Rds On) :
10V
Voltage - Rated DC :
500V
Gate to Source Voltage (Vgs) :
20V
Terminal Form :
THROUGH-HOLE
Drain to Source Breakdown Voltage :
500V
Number of Terminations :
3
Reach Compliance Code :
Compliant
DS Breakdown Voltage-Min :
500 V
Drain to Source Voltage (Vdss) :
500V
Rds On (Max) @ Id, Vgs :
200m Ω @ 13A, 10V
RoHS Status :
RoHS Compliant
Manufacturer :
IXYS Corporation
Qualification Status :
Not Qualified
Threshold Voltage :
4V
Series :
HiPerFET™
Factory Lead Time :
8 Weeks
Maximum Operating Temperature :
+ 150 C
Power Dissipation-Max :
300W Tc
Number of Pins :
3
Power Dissipation (Max) :
300W (Tc)
Transistor Element Material :
SILICON
FET Type :
N-Channel
Additional Feature :
AVALANCHE RATED
Element Configuration :
Single
Package Shape :
RECTANGULAR
Weight :
6g
Gate Charge (Qg) (Max) @ Vgs :
95nC @ 10V
Vgs(th) (Max) @ Id :
4.5V @ 4mA
Reverse Recovery Time :
250 ns
Package / Case :
TO-247-3
Operating Temperature :
-55°C~150°C TJ
Current - Continuous Drain (Id) @ 25°C :
26A Tc
Number of Channels :
1 Channel
Power Dissipation :
300W
Nominal Vgs :
4.5 V
REACH SVHC :
Unknown
Operating Mode :
ENHANCEMENT MODE
Resistance :
200mOhm
Drain-source On Resistance-Max :
0.2 Ω
Package :
Tube
Avalanche Energy Rating (Eas) :
1500 mJ
Minimum Operating Temperature :
- 55 C
Published :
2003
Mount :
Through Hole
Drain Current-Max (Abs) (ID) :
26 A
Surface Mount :
No
Pbfree Code :
yes
ECCN Code :
EAR99
Rise Time :
30ns
Lead Free :
Lead Free
Mounting Style :
Through Hole
Datasheets
IXFH26N50Q
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFH26N50Q from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Number of Terminations:3, Number of Pins:3, Package / Case:TO-247-3, Operating Temperature:-55°C~150°C TJ, Number of Channels:1 Channel, IXFH26N50Q pinout, IXFH26N50Q datasheet PDF, IXFH26N50Q amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFH26N50Q ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFH26N50Q


N-Channel Tube 200m Ω @ 13A, 10V ±20V 3900pF @ 25V 95nC @ 10V 500V TO-247-3

IXFH26N50Q Overview


This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 1500 mJ.The maximum input capacitance of this device is 3900pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 26A.When VGS=500V, and ID flows to VDS at 500VVDS, the drain-source breakdown voltage is 500V in this device.As shown in the table below, the drain current of this device is 26 A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 55 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 104 A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is 4V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 500 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 500V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

IXFH26N50Q Features


the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 26A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 55 ns
based on its rated peak drain current 104 A.
a threshold voltage of 4V
a 500V drain to source voltage (Vdss)


IXFH26N50Q Applications


There are a lot of IXYS
IXFH26N50Q applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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