IXFH26N50

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Mfr.Part #
IXFH26N50
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 500V 26A TO247AD
Stock
8,717
In Stock :
8,717

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Turn On Delay Time :
20 ns
Rds On (Max) @ Id, Vgs :
230m Ω @ 13A, 10V
Case Connection :
DRAIN
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Product Category :
MOSFET
Drain to Source Breakdown Voltage :
500V
Minimum Operating Temperature :
-55 °C
Resistance :
230mOhm
Drive Voltage (Max Rds On,Min Rds On) :
10V
Product Status :
Active
Continuous Drain Current Id :
26A
Transistor Application :
SWITCHING
Package / Case :
TO-247-3
Package Type :
TO-247
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Channels :
1 Channel
Mounting Type :
Through Hole
Reach Compliance Code :
Compliant
Width :
5.3mm
Operating Mode :
ENHANCEMENT MODE
RoHS :
Details
Subcategory :
MOSFETs
Supplier Device Package :
TO-247AD (IXFH)
Product Type :
MOSFET
Base Product Number :
IXFH26
JESD-609 Code :
e1
Mount :
Through Hole
Factory Lead Time :
30 Weeks
Brand :
IXYS
JEDEC-95 Code :
TO-247AD
Continuous Drain Current (ID) :
26A
Number of Terminations :
3
Channel Mode :
Enhancement
Element Configuration :
Single
Turn-Off Delay Time :
58 ns
Series :
HiPerFET™, PolarHT™
Transistor Polarity :
N-Channel
Vgs(th) (Max) @ Id :
5.5V @ 4mA
Transistor Element Material :
SILICON
Number of Elements :
1
Rise Time :
25ns
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
3600pF @ 25V
Pin Count :
3
Package :
Tube
Qualification :
-
Packaging :
Tube
Pbfree Code :
yes
Current Rating :
26A
Power Dissipation-Max :
400W Tc
Number of Elements per Chip :
1
Pulsed Drain Current-Max (IDM) :
78A
FET Type :
N-Channel
Qualification Status :
Not Qualified
Maximum Operating Temperature :
+150 °C
Manufacturer :
IXYS
Power Dissipation :
400W
Drain to Source Voltage (Vdss) :
500V
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Channel Type :
N
RoHS Status :
ROHS3 Compliant
Power Dissipation (Max) :
400W (Tc)
Lead Free :
Lead Free
Operating Temperature :
-55°C~150°C TJ
Voltage - Rated DC :
500V
Current - Continuous Drain (Id) @ 25°C :
26A Tc
Mounting Style :
Through Hole
Gate Charge (Qg) (Max) @ Vgs :
60nC @ 10V
Number of Pins :
3
Tradename :
HiPerFET
Length :
16.26mm
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Configuration :
Single
Gate to Source Voltage (Vgs) :
30V
Height :
21.46mm
Transistor Type :
1 N-Channel
Additional Feature :
AVALANCHE RATED
Fall Time (Typ) :
20 ns
FET Feature :
--
Published :
2006
Datasheets
IXFH26N50
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFH26N50 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-247-3, Number of Channels:1 Channel, Mounting Type:Through Hole, Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, Number of Pins:3, IXFH26N50 pinout, IXFH26N50 datasheet PDF, IXFH26N50 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFH26N50 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFH26N50


N-Channel Tube 230m Ω @ 13A, 10V ±30V 3600pF @ 25V 60nC @ 10V 500V TO-247-3

IXFH26N50P Overview


As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 3600pF @ 25V.This device conducts a continuous drain current (ID) of 26A, which is the maximum continuous current transistor can conduct.Using VGS=500V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 500V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 58 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 78A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 20 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.This transistor requires a drain-source voltage (Vdss) of 500V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

IXFH26N50P Features


a continuous drain current (ID) of 26A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 58 ns
based on its rated peak drain current 78A.
a 500V drain to source voltage (Vdss)


IXFH26N50P Applications


There are a lot of IXYS
IXFH26N50P applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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