IXFH26N50
- Mfr.Part #
- IXFH26N50
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 26A TO247AD
- Stock
- 8,717
- In Stock :
- 8,717
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Turn On Delay Time :
- 20 ns
- Rds On (Max) @ Id, Vgs :
- 230m Ω @ 13A, 10V
- Case Connection :
- DRAIN
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Product Category :
- MOSFET
- Drain to Source Breakdown Voltage :
- 500V
- Minimum Operating Temperature :
- -55 °C
- Resistance :
- 230mOhm
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Product Status :
- Active
- Continuous Drain Current Id :
- 26A
- Transistor Application :
- SWITCHING
- Package / Case :
- TO-247-3
- Package Type :
- TO-247
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Channels :
- 1 Channel
- Mounting Type :
- Through Hole
- Reach Compliance Code :
- Compliant
- Width :
- 5.3mm
- Operating Mode :
- ENHANCEMENT MODE
- RoHS :
- Details
- Subcategory :
- MOSFETs
- Supplier Device Package :
- TO-247AD (IXFH)
- Product Type :
- MOSFET
- Base Product Number :
- IXFH26
- JESD-609 Code :
- e1
- Mount :
- Through Hole
- Factory Lead Time :
- 30 Weeks
- Brand :
- IXYS
- JEDEC-95 Code :
- TO-247AD
- Continuous Drain Current (ID) :
- 26A
- Number of Terminations :
- 3
- Channel Mode :
- Enhancement
- Element Configuration :
- Single
- Turn-Off Delay Time :
- 58 ns
- Series :
- HiPerFET™, PolarHT™
- Transistor Polarity :
- N-Channel
- Vgs(th) (Max) @ Id :
- 5.5V @ 4mA
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- Rise Time :
- 25ns
- Vgs (Max) :
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds :
- 3600pF @ 25V
- Pin Count :
- 3
- Package :
- Tube
- Qualification :
- -
- Packaging :
- Tube
- Pbfree Code :
- yes
- Current Rating :
- 26A
- Power Dissipation-Max :
- 400W Tc
- Number of Elements per Chip :
- 1
- Pulsed Drain Current-Max (IDM) :
- 78A
- FET Type :
- N-Channel
- Qualification Status :
- Not Qualified
- Maximum Operating Temperature :
- +150 °C
- Manufacturer :
- IXYS
- Power Dissipation :
- 400W
- Drain to Source Voltage (Vdss) :
- 500V
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Channel Type :
- N
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation (Max) :
- 400W (Tc)
- Lead Free :
- Lead Free
- Operating Temperature :
- -55°C~150°C TJ
- Voltage - Rated DC :
- 500V
- Current - Continuous Drain (Id) @ 25°C :
- 26A Tc
- Mounting Style :
- Through Hole
- Gate Charge (Qg) (Max) @ Vgs :
- 60nC @ 10V
- Number of Pins :
- 3
- Tradename :
- HiPerFET
- Length :
- 16.26mm
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Configuration :
- Single
- Gate to Source Voltage (Vgs) :
- 30V
- Height :
- 21.46mm
- Transistor Type :
- 1 N-Channel
- Additional Feature :
- AVALANCHE RATED
- Fall Time (Typ) :
- 20 ns
- FET Feature :
- --
- Published :
- 2006
- Datasheets
- IXFH26N50

N-Channel Tube 230m Ω @ 13A, 10V ±30V 3600pF @ 25V 60nC @ 10V 500V TO-247-3
IXFH26N50P Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 3600pF @ 25V.This device conducts a continuous drain current (ID) of 26A, which is the maximum continuous current transistor can conduct.Using VGS=500V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 500V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 58 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 78A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 20 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.This transistor requires a drain-source voltage (Vdss) of 500V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IXFH26N50P Features
a continuous drain current (ID) of 26A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 58 ns
based on its rated peak drain current 78A.
a 500V drain to source voltage (Vdss)
IXFH26N50P Applications
There are a lot of IXYS
IXFH26N50P applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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