IXFH26N50

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Supplier Device Package :

TO-247AD (IXFH)

Case Connection :

DRAIN

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

FET Feature :

--

Channel Type :

N

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

1

Turn On Delay Time :

20 ns

Number of Channels :

1 Channel

RoHS :

Details

Vgs(th) (Max) @ Id :

5.5V @ 4mA

Packaging :

Tube

Number of Pins :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

Qualification :

-

Mounting Style :

Through Hole

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e1

Mounting Type :

Through Hole

Turn-Off Delay Time :

58 ns

Reach Compliance Code :

Compliant

Package :

Tube

Resistance :

230mOhm

Subcategory :

MOSFETs

Number of Terminations :

3

Current - Continuous Drain (Id) @ 25°C :

26A Tc

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

3600pF @ 25V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Tradename :

HiPerFET

Power Dissipation-Max :

400W Tc

Package / Case :

TO-247-3

Pbfree Code :

yes

Drain to Source Voltage (Vdss) :

500V

RoHS Status :

ROHS3 Compliant

Configuration :

Single

Power Dissipation :

400W

Pulsed Drain Current-Max (IDM) :

78A

FET Type :

N-Channel

Vgs (Max) :

±30V

Factory Lead Time :

30 Weeks

Element Configuration :

Single

Brand :

IXYS

Transistor Type :

1 N-Channel

Package Type :

TO-247

Mount :

Through Hole

Published :

2006

Base Product Number :

IXFH26

Power Dissipation (Max) :

400W (Tc)

Height :

21.46mm

Fall Time (Typ) :

20 ns

Manufacturer :

IXYS

Length :

16.26mm

Number of Elements per Chip :

1

Channel Mode :

Enhancement

JEDEC-95 Code :

TO-247AD

Series :

HiPerFET™, PolarHT™

Rise Time :

25ns

Continuous Drain Current (ID) :

26A

Additional Feature :

AVALANCHE RATED

Product Category :

MOSFET

Gate Charge (Qg) (Max) @ Vgs :

60nC @ 10V

Current Rating :

26A

Rds On (Max) @ Id, Vgs :

230m Ω @ 13A, 10V

Gate to Source Voltage (Vgs) :

30V

Transistor Element Material :

SILICON

Pin Count :

3

Width :

5.3mm

Transistor Polarity :

N-Channel

Continuous Drain Current Id :

26A

Drain to Source Breakdown Voltage :

500V

Product Status :

Active

Minimum Operating Temperature :

-55 °C

Voltage - Rated DC :

500V

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Transistor Application :

SWITCHING

Product Type :

MOSFET

Maximum Operating Temperature :

+150 °C

Qualification Status :

Not Qualified