IXFH26N50
- Mfr.Part #
- IXFH26N50
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 26A TO247AD
- Stock
- 8,717
- In Stock :
- 8,717
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Elements per Chip :
- 1
- Transistor Application :
- SWITCHING
- Transistor Element Material :
- SILICON
- Pbfree Code :
- yes
- Product Category :
- MOSFET
- Width :
- 5.3mm
- Length :
- 16.26mm
- Channel Mode :
- Enhancement
- Maximum Operating Temperature :
- +150 °C
- RoHS :
- Details
- Fall Time (Typ) :
- 20 ns
- Mounting Type :
- Through Hole
- Configuration :
- Single
- Package / Case :
- TO-247-3
- Factory Lead Time :
- 30 Weeks
- Rds On (Max) @ Id, Vgs :
- 230m Ω @ 13A, 10V
- Published :
- 2006
- Drain to Source Breakdown Voltage :
- 500V
- Number of Terminations :
- 3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Channels :
- 1 Channel
- Manufacturer :
- IXYS
- Number of Pins :
- 3
- Current - Continuous Drain (Id) @ 25°C :
- 26A Tc
- Number of Elements :
- 1
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Resistance :
- 230mOhm
- RoHS Status :
- ROHS3 Compliant
- Supplier Device Package :
- TO-247AD (IXFH)
- Subcategory :
- MOSFETs
- Power Dissipation (Max) :
- 400W (Tc)
- JESD-609 Code :
- e1
- Lead Free :
- Lead Free
- Product Type :
- MOSFET
- Case Connection :
- DRAIN
- Additional Feature :
- AVALANCHE RATED
- Drain to Source Voltage (Vdss) :
- 500V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Vgs (Max) :
- ±30V
- Package Type :
- TO-247
- Element Configuration :
- Single
- Power Dissipation :
- 400W
- Gate to Source Voltage (Vgs) :
- 30V
- Brand :
- IXYS
- FET Type :
- N-Channel
- Continuous Drain Current (ID) :
- 26A
- Packaging :
- Tube
- Turn On Delay Time :
- 20 ns
- Operating Mode :
- ENHANCEMENT MODE
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Operating Temperature :
- -55°C~150°C TJ
- Channel Type :
- N
- Reach Compliance Code :
- Compliant
- Transistor Type :
- 1 N-Channel
- Power Dissipation-Max :
- 400W Tc
- Turn-Off Delay Time :
- 58 ns
- Mounting Style :
- Through Hole
- Mount :
- Through Hole
- Pulsed Drain Current-Max (IDM) :
- 78A
- Product Status :
- Active
- Input Capacitance (Ciss) (Max) @ Vds :
- 3600pF @ 25V
- Package :
- Tube
- Pin Count :
- 3
- Qualification :
- -
- Gate Charge (Qg) (Max) @ Vgs :
- 60nC @ 10V
- Vgs(th) (Max) @ Id :
- 5.5V @ 4mA
- Rise Time :
- 25ns
- Transistor Polarity :
- N-Channel
- FET Feature :
- --
- Series :
- HiPerFET™, PolarHT™
- Voltage - Rated DC :
- 500V
- Height :
- 21.46mm
- Current Rating :
- 26A
- JEDEC-95 Code :
- TO-247AD
- Continuous Drain Current Id :
- 26A
- Tradename :
- HiPerFET
- Minimum Operating Temperature :
- -55 °C
- Base Product Number :
- IXFH26
- Qualification Status :
- Not Qualified
- Datasheets
- IXFH26N50

N-Channel Tube 230m Ω @ 13A, 10V ±30V 3600pF @ 25V 60nC @ 10V 500V TO-247-3
IXFH26N50P Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 3600pF @ 25V.This device conducts a continuous drain current (ID) of 26A, which is the maximum continuous current transistor can conduct.Using VGS=500V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 500V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 58 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 78A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 20 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.This transistor requires a drain-source voltage (Vdss) of 500V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IXFH26N50P Features
a continuous drain current (ID) of 26A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 58 ns
based on its rated peak drain current 78A.
a 500V drain to source voltage (Vdss)
IXFH26N50P Applications
There are a lot of IXYS
IXFH26N50P applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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