IXFH24N90P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

7200pF @ 25V

Power Dissipation-Max (Abs) :

660 W

Product Type :

MOSFET

Max Power Dissipation :

660 W

JEDEC-95 Code :

TO-247AD

Length :

16.26 mm

Power Dissipation-Max :

660W Tc

Number of Terminations :

3

Min Operating Temperature :

-55 °C

Transistor Element Material :

SILICON

Continuous Drain Current Id :

24A

RoHS Status :

ROHS3 Compliant

Power Dissipation (Max) :

660W (Tc)

Number of Elements :

1

Minimum Operating Temperature :

- 55 C

Reach Compliance Code :

Unknown

Pulsed Drain Current-Max (IDM) :

48A

Rds On Max :

420 mΩ

MSL :

-

Pin Count :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

68 ns

Avalanche Energy Rating (Eas) :

1000 mJ

Pbfree Code :

yes

Continuous Drain Current (ID) :

24A

Configuration :

Single

Factory Lead Time :

30 Weeks

Terminal Position :

Single

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

24A Tc

Element Configuration :

Single

Power Dissipation :

660W

JESD-30 Code :

R-PSFM-T3

Threshold Voltage :

3.5V

Input Capacitance :

7.2 nF

Package Shape :

RECTANGULAR

Published :

2001

Product Status :

Active

DS Breakdown Voltage-Min :

900 V

Drain to Source Resistance :

420 mΩ

Drain Current-Max (Abs) (ID) :

24 A

Vgs (Max) :

±30V

REACH SVHC :

No SVHC

Drain-source On Resistance-Max :

0.42Ohm

Additional Feature :

AVALANCHE RATED

Drain to Source Breakdown Voltage :

900V

Series :

HiPerFET™, PolarP2™

Rds On (Max) @ Id, Vgs :

420m Ω @ 12A, 10V

Transistor Type :

1 N-Channel

JESD-609 Code :

e1

Mounting Style :

Through Hole

Base Product Number :

IXFH24

Max Operating Temperature :

150 °C

Mount :

Through Hole

RoHS :

Details

FET Feature :

--

Case Connection :

DRAIN

Terminal Form :

THROUGH-HOLE

ECCN Code :

EAR99

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Vgs(th) (Max) @ Id :

6.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs :

130nC @ 10V

Polarity/Channel Type :

N-Channel

Operating Temperature :

-55°C~150°C TJ

Tradename :

HiPerFET

Drain to Source Voltage (Vdss) :

900V

Mounting Type :

Through Hole

Package / Case :

TO-247-3

Fall Time (Typ) :

38 ns

Transistor Application :

SWITCHING

Number of Pins :

3

Product Category :

MOSFET

Height :

21.46 mm

Gate to Source Voltage (Vgs) :

30V

Packaging :

Tube

Manufacturer :

IXYS

Nominal Vgs :

3.5 V

Qualification Status :

Not Qualified

Package :

Tube

Transistor Polarity :

N-Channel

Rise Time :

40ns

Surface Mount :

No

Channel Mode :

Enhancement

FET Type :

N-Channel

Width :

5.3 mm

Number of Channels :

1 Channel

Channel Type :

N Channel

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Brand :

IXYS

Supplier Device Package :

TO-247AD (IXFH)

Maximum Operating Temperature :

+ 150 C

Number of Terminals :

3

Lead Free :

Lead Free

Qualification :

-

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED