IXFH24N90P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain to Source Resistance :

420 mΩ

Power Dissipation-Max :

660W Tc

Threshold Voltage :

3.5V

RoHS Status :

ROHS3 Compliant

Additional Feature :

AVALANCHE RATED

Drain Current-Max (Abs) (ID) :

24 A

Nominal Vgs :

3.5 V

DS Breakdown Voltage-Min :

900 V

Max Power Dissipation :

660 W

Package / Case :

TO-247-3

Series :

HiPerFET™, PolarP2™

Transistor Application :

SWITCHING

Fall Time (Typ) :

38 ns

Power Dissipation :

660W

Rise Time :

40ns

Mounting Style :

Through Hole

Mount :

Through Hole

Channel Type :

N Channel

Drain-source On Resistance-Max :

0.42Ohm

Qualification :

-

Drain to Source Voltage (Vdss) :

900V

Brand :

IXYS

Lead Free :

Lead Free

Height :

21.46 mm

Vgs(th) (Max) @ Id :

6.5V @ 1mA

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Minimum Operating Temperature :

- 55 C

Configuration :

Single

Power Dissipation (Max) :

660W (Tc)

Width :

5.3 mm

Qualification Status :

Not Qualified

Transistor Polarity :

N-Channel

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

7200pF @ 25V

FET Feature :

--

Mounting Type :

Through Hole

Max Operating Temperature :

150 °C

Power Dissipation-Max (Abs) :

660 W

Package Shape :

RECTANGULAR

Case Connection :

DRAIN

Pin Count :

3

Number of Terminations :

3

Pbfree Code :

yes

Rds On Max :

420 mΩ

Number of Channels :

1 Channel

Continuous Drain Current Id :

24A

Input Capacitance :

7.2 nF

Package :

Tube

Length :

16.26 mm

JEDEC-95 Code :

TO-247AD

Current - Continuous Drain (Id) @ 25°C :

24A Tc

Gate Charge (Qg) (Max) @ Vgs :

130nC @ 10V

Vgs (Max) :

±30V

Turn-Off Delay Time :

68 ns

Base Product Number :

IXFH24

Polarity/Channel Type :

N-Channel

Rds On (Max) @ Id, Vgs :

420m Ω @ 12A, 10V

Channel Mode :

Enhancement

Product Status :

Active

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-PSFM-T3

Gate to Source Voltage (Vgs) :

30V

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Packaging :

Tube

Terminal Form :

THROUGH-HOLE

Product Category :

MOSFET

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Maximum Operating Temperature :

+ 150 C

Published :

2001

Tradename :

HiPerFET

MSL :

-

Pulsed Drain Current-Max (IDM) :

48A

Factory Lead Time :

30 Weeks

REACH SVHC :

No SVHC

Min Operating Temperature :

-55 °C

RoHS :

Details

JESD-609 Code :

e1

Drive Voltage (Max Rds On,Min Rds On) :

10V

Element Configuration :

Single

FET Type :

N-Channel

Manufacturer :

IXYS

Transistor Type :

1 N-Channel

Drain to Source Breakdown Voltage :

900V

Surface Mount :

No

Number of Pins :

3

Continuous Drain Current (ID) :

24A

Operating Temperature :

-55°C~150°C TJ

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

Single

Product Type :

MOSFET

Number of Terminals :

3

Supplier Device Package :

TO-247AD (IXFH)

Reach Compliance Code :

Unknown

Avalanche Energy Rating (Eas) :

1000 mJ