IXFH24N50Q
- Mfr.Part #
- IXFH24N50Q
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 24A TO247AD
- Stock
- 36,488
- In Stock :
- 36,488
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Fall Time (Typ) :
- 16 ns
- Package :
- Tube
- Drain-source On Resistance-Max :
- 0.23 Ω
- Lead Free :
- Lead Free
- Continuous Drain Current (ID) :
- 24A
- Mount :
- Through Hole
- Radiation Hardening :
- No
- Number of Terminations :
- 3
- Terminal Form :
- THROUGH-HOLE
- Mounting Type :
- Through Hole
- Element Configuration :
- Single
- Gate to Source Voltage (Vgs) :
- 20V
- Rise Time :
- 30ns
- Product Status :
- Obsolete
- Pbfree Code :
- yes
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Power Dissipation (Max) :
- 300W (Tc)
- Polarity/Channel Type :
- N-Channel
- Reach Compliance Code :
- Compliant
- Avalanche Energy Rating (Eas) :
- 1500 mJ
- Current - Continuous Drain (Id) @ 25°C :
- 24A Tc
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Resistance :
- 230mOhm
- Qualification Status :
- Not Qualified
- Transistor Element Material :
- SILICON
- Supplier Device Package :
- TO-247AD (IXFH)
- Case Connection :
- DRAIN
- Additional Feature :
- AVALANCHE RATED
- Operating Temperature :
- -55°C~150°C TJ
- Drain to Source Voltage (Vdss) :
- 500V
- Vgs(th) (Max) @ Id :
- 4.5V @ 4mA
- Manufacturer :
- IXYS Corporation
- Terminal Position :
- Single
- Turn-Off Delay Time :
- 55 ns
- Published :
- 2003
- Power Dissipation-Max :
- 300W Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 95nC @ 10V
- Pulsed Drain Current-Max (IDM) :
- 96A
- Vgs (Max) :
- ±20V
- Operating Mode :
- ENHANCEMENT MODE
- DS Breakdown Voltage-Min :
- 500 V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Number of Pins :
- 3
- Package / Case :
- TO-247-3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Power Dissipation :
- 300W
- Drain to Source Breakdown Voltage :
- 500V
- RoHS Status :
- RoHS Compliant
- FET Feature :
- --
- JESD-30 Code :
- R-PSFM-T3
- Base Product Number :
- IXFH24
- Number of Elements :
- 1
- Pin Count :
- 3
- Input Capacitance (Ciss) (Max) @ Vds :
- 3900pF @ 25V
- Packaging :
- Tube
- Series :
- HiPerFET™
- JEDEC-95 Code :
- TO-247AD
- Rds On (Max) @ Id, Vgs :
- 230m Ω @ 12A, 10V
- Number of Terminals :
- 3
- Package Shape :
- RECTANGULAR
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Surface Mount :
- No
- FET Type :
- N-Channel
- Transistor Application :
- SWITCHING
- Datasheets
- IXFH24N50Q

N-Channel Tube 230m Ω @ 12A, 10V ±20V 3900pF @ 25V 95nC @ 10V 500V TO-247-3
IXFH24N50Q Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 1500 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 3900pF @ 25V.This device has a continuous drain current (ID) of [24A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=500V, the drain-source breakdown voltage is 500V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 55 ns.A maximum pulsed drain current of 96A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 500 V.In order to operate this transistor, a voltage of 500V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IXFH24N50Q Features
the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 24A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 55 ns
based on its rated peak drain current 96A.
a 500V drain to source voltage (Vdss)
IXFH24N50Q Applications
There are a lot of IXYS
IXFH24N50Q applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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