IXFH24N50Q

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Mfr.Part #
IXFH24N50Q
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 500V 24A TO247AD
Stock
36,488
In Stock :
36,488

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Fall Time (Typ) :
16 ns
Package :
Tube
Drain-source On Resistance-Max :
0.23 Ω
Lead Free :
Lead Free
Continuous Drain Current (ID) :
24A
Mount :
Through Hole
Radiation Hardening :
No
Number of Terminations :
3
Terminal Form :
THROUGH-HOLE
Mounting Type :
Through Hole
Element Configuration :
Single
Gate to Source Voltage (Vgs) :
20V
Rise Time :
30ns
Product Status :
Obsolete
Pbfree Code :
yes
Configuration :
SINGLE WITH BUILT-IN DIODE
Power Dissipation (Max) :
300W (Tc)
Polarity/Channel Type :
N-Channel
Reach Compliance Code :
Compliant
Avalanche Energy Rating (Eas) :
1500 mJ
Current - Continuous Drain (Id) @ 25°C :
24A Tc
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Resistance :
230mOhm
Qualification Status :
Not Qualified
Transistor Element Material :
SILICON
Supplier Device Package :
TO-247AD (IXFH)
Case Connection :
DRAIN
Additional Feature :
AVALANCHE RATED
Operating Temperature :
-55°C~150°C TJ
Drain to Source Voltage (Vdss) :
500V
Vgs(th) (Max) @ Id :
4.5V @ 4mA
Manufacturer :
IXYS Corporation
Terminal Position :
Single
Turn-Off Delay Time :
55 ns
Published :
2003
Power Dissipation-Max :
300W Tc
Gate Charge (Qg) (Max) @ Vgs :
95nC @ 10V
Pulsed Drain Current-Max (IDM) :
96A
Vgs (Max) :
±20V
Operating Mode :
ENHANCEMENT MODE
DS Breakdown Voltage-Min :
500 V
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Number of Pins :
3
Package / Case :
TO-247-3
Drive Voltage (Max Rds On,Min Rds On) :
10V
Power Dissipation :
300W
Drain to Source Breakdown Voltage :
500V
RoHS Status :
RoHS Compliant
FET Feature :
--
JESD-30 Code :
R-PSFM-T3
Base Product Number :
IXFH24
Number of Elements :
1
Pin Count :
3
Input Capacitance (Ciss) (Max) @ Vds :
3900pF @ 25V
Packaging :
Tube
Series :
HiPerFET™
JEDEC-95 Code :
TO-247AD
Rds On (Max) @ Id, Vgs :
230m Ω @ 12A, 10V
Number of Terminals :
3
Package Shape :
RECTANGULAR
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Surface Mount :
No
FET Type :
N-Channel
Transistor Application :
SWITCHING
Datasheets
IXFH24N50Q
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFH24N50Q from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, Number of Pins:3, Package / Case:TO-247-3, IXFH24N50Q pinout, IXFH24N50Q datasheet PDF, IXFH24N50Q amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFH24N50Q ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFH24N50Q


N-Channel Tube 230m Ω @ 12A, 10V ±20V 3900pF @ 25V 95nC @ 10V 500V TO-247-3

IXFH24N50Q Overview


There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 1500 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 3900pF @ 25V.This device has a continuous drain current (ID) of [24A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=500V, the drain-source breakdown voltage is 500V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 55 ns.A maximum pulsed drain current of 96A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 500 V.In order to operate this transistor, a voltage of 500V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

IXFH24N50Q Features


the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 24A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 55 ns
based on its rated peak drain current 96A.
a 500V drain to source voltage (Vdss)


IXFH24N50Q Applications


There are a lot of IXYS
IXFH24N50Q applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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