IXFH24N50

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

160nC @ 10V

Published :

2002

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Resistance :

230mOhm

RoHS Status :

ROHS3 Compliant

Threshold Voltage :

4V

Mount :

Through Hole

Terminal Form :

THROUGH-HOLE

Vgs (Max) :

±20V

Surface Mount :

No

Base Product Number :

IXFH24

Drain Current-Max (Abs) (ID) :

24 A

Product Type :

MOSFET

Factory Lead Time :

8 Weeks

Weight :

6g

Reverse Recovery Time :

250 ns

Radiation Hardening :

No

Gate to Source Voltage (Vgs) :

20V

Vgs(th) (Max) @ Id :

4V @ 4mA

Nominal Vgs :

4 V

Length :

16.26 mm

Turn-Off Delay Time :

65 ns

Minimum Operating Temperature :

- 55 C

Product Status :

Not For New Designs

Continuous Drain Current (ID) :

24A

Number of Elements :

1

Package :

Tube

Maximum Operating Temperature :

+ 150 C

Pbfree Code :

yes

Number of Terminals :

3

Pin Count :

3

Tradename :

HyperFET

Current - Continuous Drain (Id) @ 25°C :

24A Tc

Transistor Element Material :

SILICON

Channel Mode :

Enhancement

Reach Compliance Code :

Compliant

Drain to Source Voltage (Vdss) :

500V

Mounting Type :

Through Hole

RoHS :

Details

Dual Supply Voltage :

500V

Voltage - Rated DC :

500V

Power Dissipation-Max (Abs) :

300 W

Current Rating :

24A

Moisture Sensitivity Level (MSL) :

Not Applicable

Package / Case :

TO-247-3

Rise Time :

33ns

Termination :

Through Hole

Packaging :

Tube

Drive Voltage (Max Rds On,Min Rds On) :

10V

Qualification Status :

Not Qualified

Additional Feature :

AVALANCHE RATED

Number of Pins :

3

FET Feature :

--

Configuration :

Single

Input Capacitance (Ciss) (Max) @ Vds :

4200pF @ 25V

Power Dissipation (Max) :

300W (Tc)

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Terminal Position :

Single

ECCN Code :

EAR99

Supplier Device Package :

TO-247AD (IXFH)

Polarity/Channel Type :

N-Channel

Number of Channels :

1 Channel

JEDEC-95 Code :

TO-247

REACH SVHC :

No SVHC

Transistor Polarity :

N-Channel

Fall Time (Typ) :

30 ns

Pulsed Drain Current-Max (IDM) :

96A

Lead Free :

Lead Free

Number of Terminations :

3

Drain-source On Resistance-Max :

0.23 Ω

Power Dissipation :

300W

DS Breakdown Voltage-Min :

500 V

Rds On (Max) @ Id, Vgs :

230m Ω @ 12A, 10V

Transistor Application :

SWITCHING

Brand :

IXYS

Case Connection :

DRAIN

Product Category :

MOSFET

Package Shape :

RECTANGULAR

Width :

5.3 mm

Element Configuration :

Single

Series :

HiPerFET™

Height :

21.46 mm

Transistor Type :

1 N-Channel

HTS Code :

8541.29.00.95

Drain to Source Breakdown Voltage :

500V

Manufacturer :

IXYS

Operating Temperature :

-55°C~150°C TJ

JESD-30 Code :

R-PSFM-T3

Recovery Time :

250 ns

Power Dissipation-Max :

300W Tc

Power Dissipation Ambient-Max :

300 W

Mounting Style :

Through Hole