IXFH23N80Q

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Mfr.Part #
IXFH23N80Q
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 800V 23A TO247AD
Stock
76,363
In Stock :
76,363

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Rise Time :
27ns
Manufacturer :
IXYS
Mounting Style :
Through Hole
Drain to Source Breakdown Voltage :
800V
Transistor Type :
1 N-Channel
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Maximum Operating Temperature :
+ 150 C
Current - Continuous Drain (Id) @ 25°C :
23A Tc
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Transistor Element Material :
SILICON
Case Connection :
DRAIN
Pulsed Drain Current-Max (IDM) :
92A
Package / Case :
TO-247-3
Minimum Operating Temperature :
- 55 C
Number of Terminations :
3
Mounting Type :
Through Hole
Number of Channels :
1 Channel
Product Type :
MOSFET
Width :
5.3 mm
RoHS :
Details
Transistor Polarity :
N-Channel
JEDEC-95 Code :
TO-247AD
Brand :
IXYS
Terminal Form :
THROUGH-HOLE
Reach Compliance Code :
Unknown
Drain-source On Resistance-Max :
0.4Ohm
Surface Mount :
No
Base Product Number :
IXFH23
Subcategory :
MOSFETs
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Configuration :
Single
Turn-Off Delay Time :
74 ns
Operating Mode :
ENHANCEMENT MODE
Gate to Source Voltage (Vgs) :
30V
RoHS Status :
ROHS3 Compliant
Vgs (Max) :
±30V
Package Shape :
RECTANGULAR
Power Dissipation :
500W
Input Capacitance (Ciss) (Max) @ Vds :
4900pF @ 25V
Power Dissipation (Max) :
500W (Tc)
DS Breakdown Voltage-Min :
800 V
Drive Voltage (Max Rds On,Min Rds On) :
10V
Fall Time (Typ) :
14 ns
Supplier Device Package :
TO-247AD (IXFH)
Drain to Source Voltage (Vdss) :
800V
Published :
2004
Tradename :
HiPerFET
Qualification Status :
Not Qualified
Series :
HiPerFET™
Avalanche Energy Rating (Eas) :
1500 mJ
Pbfree Code :
yes
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
FET Feature :
--
Rds On (Max) @ Id, Vgs :
420m Ω @ 500mA, 10V
Power Dissipation-Max :
500W Tc
Packaging :
Tube
Package :
Tube
Product Status :
Active
Product Category :
MOSFET
Number of Elements :
1
Height :
21.46 mm
Vgs(th) (Max) @ Id :
4.5V @ 3mA
Number of Pins :
3
Terminal Position :
Single
FET Type :
N-Channel
Element Configuration :
Single
Mount :
Through Hole
JESD-30 Code :
R-PSFM-T3
Continuous Drain Current (ID) :
23A
Gate Charge (Qg) (Max) @ Vgs :
130nC @ 10V
Pin Count :
3
Polarity/Channel Type :
N-Channel
Channel Mode :
Enhancement
Number of Terminals :
3
Operating Temperature :
-55°C~150°C TJ
Length :
16.26 mm
Datasheets
IXFH23N80Q
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFH23N80Q from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-247-3, Number of Terminations:3, Mounting Type:Through Hole, Number of Channels:1 Channel, Number of Pins:3, Operating Temperature:-55°C~150°C TJ, IXFH23N80Q pinout, IXFH23N80Q datasheet PDF, IXFH23N80Q amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFH23N80Q ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFH23N80Q


N-Channel Tube 420m Ω @ 500mA, 10V ±30V 4900pF @ 25V 130nC @ 10V 800V TO-247-3

IXFH23N80Q Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 1500 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 4900pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 800V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 800V.As a result of its turn-off delay time, which is 74 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 92A, its maximum pulsed drain current.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 30VV.In order for DS breakdown voltage to remain above 800 V, it should remain above the 800 V level.The transistor must receive a 800V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

IXFH23N80Q Features


the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 23A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 74 ns
based on its rated peak drain current 92A.
a 800V drain to source voltage (Vdss)


IXFH23N80Q Applications


There are a lot of IXYS
IXFH23N80Q applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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