IXFH23N80Q
- Mfr.Part #
- IXFH23N80Q
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 800V 23A TO247AD
- Stock
- 76,363
- In Stock :
- 76,363
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rise Time :
- 27ns
- Manufacturer :
- IXYS
- Mounting Style :
- Through Hole
- Drain to Source Breakdown Voltage :
- 800V
- Transistor Type :
- 1 N-Channel
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Maximum Operating Temperature :
- + 150 C
- Current - Continuous Drain (Id) @ 25°C :
- 23A Tc
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Transistor Element Material :
- SILICON
- Case Connection :
- DRAIN
- Pulsed Drain Current-Max (IDM) :
- 92A
- Package / Case :
- TO-247-3
- Minimum Operating Temperature :
- - 55 C
- Number of Terminations :
- 3
- Mounting Type :
- Through Hole
- Number of Channels :
- 1 Channel
- Product Type :
- MOSFET
- Width :
- 5.3 mm
- RoHS :
- Details
- Transistor Polarity :
- N-Channel
- JEDEC-95 Code :
- TO-247AD
- Brand :
- IXYS
- Terminal Form :
- THROUGH-HOLE
- Reach Compliance Code :
- Unknown
- Drain-source On Resistance-Max :
- 0.4Ohm
- Surface Mount :
- No
- Base Product Number :
- IXFH23
- Subcategory :
- MOSFETs
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Configuration :
- Single
- Turn-Off Delay Time :
- 74 ns
- Operating Mode :
- ENHANCEMENT MODE
- Gate to Source Voltage (Vgs) :
- 30V
- RoHS Status :
- ROHS3 Compliant
- Vgs (Max) :
- ±30V
- Package Shape :
- RECTANGULAR
- Power Dissipation :
- 500W
- Input Capacitance (Ciss) (Max) @ Vds :
- 4900pF @ 25V
- Power Dissipation (Max) :
- 500W (Tc)
- DS Breakdown Voltage-Min :
- 800 V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Fall Time (Typ) :
- 14 ns
- Supplier Device Package :
- TO-247AD (IXFH)
- Drain to Source Voltage (Vdss) :
- 800V
- Published :
- 2004
- Tradename :
- HiPerFET
- Qualification Status :
- Not Qualified
- Series :
- HiPerFET™
- Avalanche Energy Rating (Eas) :
- 1500 mJ
- Pbfree Code :
- yes
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- FET Feature :
- --
- Rds On (Max) @ Id, Vgs :
- 420m Ω @ 500mA, 10V
- Power Dissipation-Max :
- 500W Tc
- Packaging :
- Tube
- Package :
- Tube
- Product Status :
- Active
- Product Category :
- MOSFET
- Number of Elements :
- 1
- Height :
- 21.46 mm
- Vgs(th) (Max) @ Id :
- 4.5V @ 3mA
- Number of Pins :
- 3
- Terminal Position :
- Single
- FET Type :
- N-Channel
- Element Configuration :
- Single
- Mount :
- Through Hole
- JESD-30 Code :
- R-PSFM-T3
- Continuous Drain Current (ID) :
- 23A
- Gate Charge (Qg) (Max) @ Vgs :
- 130nC @ 10V
- Pin Count :
- 3
- Polarity/Channel Type :
- N-Channel
- Channel Mode :
- Enhancement
- Number of Terminals :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- Length :
- 16.26 mm
- Datasheets
- IXFH23N80Q

N-Channel Tube 420m Ω @ 500mA, 10V ±30V 4900pF @ 25V 130nC @ 10V 800V TO-247-3
IXFH23N80Q Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 1500 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 4900pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 800V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 800V.As a result of its turn-off delay time, which is 74 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 92A, its maximum pulsed drain current.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 30VV.In order for DS breakdown voltage to remain above 800 V, it should remain above the 800 V level.The transistor must receive a 800V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IXFH23N80Q Features
the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 23A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 74 ns
based on its rated peak drain current 92A.
a 800V drain to source voltage (Vdss)
IXFH23N80Q Applications
There are a lot of IXYS
IXFH23N80Q applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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