IXFH22N65X2
- Mfr.Part #
- IXFH22N65X2
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 22A TO247
- Stock
- 8,910
- In Stock :
- 8,910
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package :
- Tube
- Manufacturer :
- IXYS
- Drain to Source Voltage (Vdss) :
- 650V
- Subcategory :
- MOSFETs
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Channel Type :
- N Channel
- RoHS Status :
- ROHS3 Compliant
- Minimum Operating Temperature :
- - 55 C
- Product Status :
- Active
- Vgs (Max) :
- ±30V
- Gate Charge (Qg) (Max) @ Vgs :
- 38nC @ 10V
- Package / Case :
- TO-247-3
- Min Operating Temperature :
- -55 °C
- Mounting Type :
- Through Hole
- Product Category :
- MOSFET
- Base Product Number :
- IXFH22
- Maximum Operating Temperature :
- + 150 C
- Max Operating Temperature :
- 150 °C
- Number of Channels :
- 1 Channel
- Qualification :
- -
- Mount :
- Through Hole
- Rise Time :
- 35 ns
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Max Power Dissipation :
- 390 W
- Mounting Style :
- Through Hole
- Transistor Polarity :
- N-Channel
- FET Type :
- N-Channel
- RoHS :
- Compliant
- Brand :
- IXYS
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Configuration :
- Single
- Series :
- HiPerFET™
- Vgs(th) (Max) @ Id :
- 5.5V @ 1.5mA
- Packaging :
- Tube
- Input Capacitance :
- 2.31 nF
- ECCN Code :
- EAR99
- Drain to Source Resistance :
- 145 mΩ
- Power Dissipation-Max :
- 390W Tc
- MSL :
- MSL 1 - Unlimited
- Operating Temperature :
- -55°C~150°C TJ
- Rds On Max :
- 160 mΩ
- Rds On (Max) @ Id, Vgs :
- 160m Ω @ 11A, 10V
- Product Type :
- MOSFET
- Continuous Drain Current (ID) :
- 22A
- Reach Compliance Code :
- not_compliant
- FET Feature :
- --
- Factory Lead Time :
- 19 Weeks
- Power Dissipation (Max) :
- 390W (Tc)
- Continuous Drain Current Id :
- 22A
- Published :
- 2015
- Supplier Device Package :
- TO-247
- Tradename :
- HiPerFET
- Channel Mode :
- Enhancement
- Input Capacitance (Ciss) (Max) @ Vds :
- 2310pF @ 25V
- Current - Continuous Drain (Id) @ 25°C :
- 22A Tc
- Power Dissipation :
- 390W
- Datasheets
- IXFH22N65X2

N-Channel Tube 160m Ω @ 11A, 10V ±30V 2310pF @ 25V 38nC @ 10V 650V TO-247-3
IXFH22N65X2 Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 2310pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 22A.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET into the on state, a drain-to-source resistance of 145 mΩ exists between the drain and source.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 650V.Using drive voltage (10V) reduces this device's overall power consumption.
IXFH22N65X2 Features
a continuous drain current (ID) of 22A
single MOSFETs transistor is 145 mΩ
a 650V drain to source voltage (Vdss)
IXFH22N65X2 Applications
There are a lot of IXYS
IXFH22N65X2 applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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