IXFH22N60P3

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Mfr.Part #
IXFH22N60P3
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 600V 22A TO247AD
Stock
174
In Stock :
174

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Height :
21.46mm
Transistor Type :
1 N-Channel
Fall Time (Typ) :
19 ns
Drain to Source Voltage (Vdss) :
600V
Maximum Operating Temperature :
+150 °C
Reach Compliance Code :
Unknown
Published :
2011
Supplier Device Package :
TO-247AD (IXFH)
Product Category :
MOSFET
FET Feature :
--
Packaging :
Tube
Current - Continuous Drain (Id) @ 25°C :
22A Tc
Channel Type :
N
Base Product Number :
IXFH22
Mounting Type :
Through Hole
Drain to Source Breakdown Voltage :
600V
Operating Mode :
ENHANCEMENT MODE
Power Dissipation (Max) :
500W (Tc)
Product Status :
Active
Avalanche Energy Rating (Eas) :
400 mJ
Rise Time :
17ns
Number of Terminations :
3
Qualification Status :
Not Qualified
Turn On Delay Time :
28 ns
Package :
Tube
RoHS Status :
ROHS3 Compliant
Package Type :
TO-247
Pulsed Drain Current-Max (IDM) :
55A
Power Dissipation-Max :
500W Tc
Tradename :
HiPerFET
Length :
16.26mm
Element Configuration :
Single
Configuration :
Single
Mounting Style :
Through Hole
Channel Mode :
Enhancement
Number of Channels :
1 Channel
Manufacturer :
IXYS
Rds On (Max) @ Id, Vgs :
360m Ω @ 11A, 10V
Width :
5.3mm
Continuous Drain Current (ID) :
22A
Turn-Off Delay Time :
54 ns
Input Capacitance (Ciss) (Max) @ Vds :
2600pF @ 25V
Number of Pins :
3
Operating Temperature :
-55°C~150°C TJ
Vgs (Max) :
±30V
RoHS :
Details
Gate Charge (Qg) (Max) @ Vgs :
38nC @ 10V
Additional Feature :
AVALANCHE RATED
Case Connection :
DRAIN
Brand :
IXYS
Transistor Application :
SWITCHING
ECCN Code :
EAR99
Pin Count :
3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Mount :
Through Hole
Product Type :
MOSFET
Transistor Polarity :
N-Channel
Series :
HiPerFET™, Polar3™
Package / Case :
TO-247-3
Transistor Element Material :
SILICON
JEDEC-95 Code :
TO-247AD
REACH SVHC :
No SVHC
FET Type :
N-Channel
Gate to Source Voltage (Vgs) :
30V
Drive Voltage (Max Rds On,Min Rds On) :
10V
Vgs(th) (Max) @ Id :
5V @ 1.5mA
Number of Elements per Chip :
1
Number of Elements :
1
Power Dissipation :
500W
Threshold Voltage :
5V
Minimum Operating Temperature :
-55 °C
Factory Lead Time :
30 Weeks
Datasheets
IXFH22N60P3
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFH22N60P3 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Number of Terminations:3, Number of Channels:1 Channel, Number of Pins:3, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-247-3, IXFH22N60P3 pinout, IXFH22N60P3 datasheet PDF, IXFH22N60P3 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFH22N60P3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFH22N60P3


N-Channel Tube 360m Ω @ 11A, 10V ±30V 2600pF @ 25V 38nC @ 10V 600V TO-247-3

IXFH22N60P3 Overview


The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 400 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 2600pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 22A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 600V, and this device has a drainage-to-source breakdown voltage of 600VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 54 ns.Peak drain current is 55A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 28 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.In this case, the threshold voltage of the transistor is 5V, which means that it will not activate any of its functions when its threshold voltage reaches 5V.For this transistor to work, a voltage 600V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

IXFH22N60P3 Features


the avalanche energy rating (Eas) is 400 mJ
a continuous drain current (ID) of 22A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 54 ns
based on its rated peak drain current 55A.
a threshold voltage of 5V
a 600V drain to source voltage (Vdss)


IXFH22N60P3 Applications


There are a lot of IXYS
IXFH22N60P3 applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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