IXFH22N60P3
- Mfr.Part #
- IXFH22N60P3
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 22A TO247AD
- Stock
- 174
- In Stock :
- 174
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Height :
- 21.46mm
- Transistor Type :
- 1 N-Channel
- Fall Time (Typ) :
- 19 ns
- Drain to Source Voltage (Vdss) :
- 600V
- Maximum Operating Temperature :
- +150 °C
- Reach Compliance Code :
- Unknown
- Published :
- 2011
- Supplier Device Package :
- TO-247AD (IXFH)
- Product Category :
- MOSFET
- FET Feature :
- --
- Packaging :
- Tube
- Current - Continuous Drain (Id) @ 25°C :
- 22A Tc
- Channel Type :
- N
- Base Product Number :
- IXFH22
- Mounting Type :
- Through Hole
- Drain to Source Breakdown Voltage :
- 600V
- Operating Mode :
- ENHANCEMENT MODE
- Power Dissipation (Max) :
- 500W (Tc)
- Product Status :
- Active
- Avalanche Energy Rating (Eas) :
- 400 mJ
- Rise Time :
- 17ns
- Number of Terminations :
- 3
- Qualification Status :
- Not Qualified
- Turn On Delay Time :
- 28 ns
- Package :
- Tube
- RoHS Status :
- ROHS3 Compliant
- Package Type :
- TO-247
- Pulsed Drain Current-Max (IDM) :
- 55A
- Power Dissipation-Max :
- 500W Tc
- Tradename :
- HiPerFET
- Length :
- 16.26mm
- Element Configuration :
- Single
- Configuration :
- Single
- Mounting Style :
- Through Hole
- Channel Mode :
- Enhancement
- Number of Channels :
- 1 Channel
- Manufacturer :
- IXYS
- Rds On (Max) @ Id, Vgs :
- 360m Ω @ 11A, 10V
- Width :
- 5.3mm
- Continuous Drain Current (ID) :
- 22A
- Turn-Off Delay Time :
- 54 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 2600pF @ 25V
- Number of Pins :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- Vgs (Max) :
- ±30V
- RoHS :
- Details
- Gate Charge (Qg) (Max) @ Vgs :
- 38nC @ 10V
- Additional Feature :
- AVALANCHE RATED
- Case Connection :
- DRAIN
- Brand :
- IXYS
- Transistor Application :
- SWITCHING
- ECCN Code :
- EAR99
- Pin Count :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Through Hole
- Product Type :
- MOSFET
- Transistor Polarity :
- N-Channel
- Series :
- HiPerFET™, Polar3™
- Package / Case :
- TO-247-3
- Transistor Element Material :
- SILICON
- JEDEC-95 Code :
- TO-247AD
- REACH SVHC :
- No SVHC
- FET Type :
- N-Channel
- Gate to Source Voltage (Vgs) :
- 30V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Vgs(th) (Max) @ Id :
- 5V @ 1.5mA
- Number of Elements per Chip :
- 1
- Number of Elements :
- 1
- Power Dissipation :
- 500W
- Threshold Voltage :
- 5V
- Minimum Operating Temperature :
- -55 °C
- Factory Lead Time :
- 30 Weeks
- Datasheets
- IXFH22N60P3

N-Channel Tube 360m Ω @ 11A, 10V ±30V 2600pF @ 25V 38nC @ 10V 600V TO-247-3
IXFH22N60P3 Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 400 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 2600pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 22A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 600V, and this device has a drainage-to-source breakdown voltage of 600VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 54 ns.Peak drain current is 55A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 28 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.In this case, the threshold voltage of the transistor is 5V, which means that it will not activate any of its functions when its threshold voltage reaches 5V.For this transistor to work, a voltage 600V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IXFH22N60P3 Features
the avalanche energy rating (Eas) is 400 mJ
a continuous drain current (ID) of 22A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 54 ns
based on its rated peak drain current 55A.
a threshold voltage of 5V
a 600V drain to source voltage (Vdss)
IXFH22N60P3 Applications
There are a lot of IXYS
IXFH22N60P3 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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