IXFH22N60P

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Mfr.Part #
IXFH22N60P
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 600V 22A TO247AD
Stock
12,013
In Stock :
12,013

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
RoHS Status :
ROHS3 Compliant
RoHS :
Details
Configuration :
Single
Input Capacitance (Ciss) (Max) @ Vds :
3600pF @ 25V
Voltage - Rated DC :
600V
Continuous Drain Current (ID) :
22A
Package / Case :
TO-247-3
Channel Mode :
Enhancement
ECCN Code :
EAR99
Supplier Device Package :
TO-247AD (IXFH)
Series :
HiPerFET™, PolarHT™
Drive Voltage (Max Rds On,Min Rds On) :
10V
Case Connection :
DRAIN
Surface Mount :
No
Type :
PolarHV HiPerFET Power MOSFET
Element Configuration :
Single
Transistor Element Material :
SILICON
Drain to Source Voltage (Vdss) :
600V
Rise Time :
20ns
JESD-609 Code :
e1
Operating Mode :
ENHANCEMENT MODE
Number of Channels :
1
Max Junction Temperature (Tj) :
150°C
Pin Count :
3
FET Technology :
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code :
R-PSFM-T3
Terminal Position :
Single
Drain to Source Breakdown Voltage :
600V
Pbfree Code :
yes
Mount :
Through Hole
Reach Compliance Code :
Compliant
Qualification Status :
Not Qualified
Avalanche Energy Rating (Eas) :
1000 mJ
Number of Elements :
1
Base Product Number :
IXFH22
Vgs (Max) :
±30V
Turn-Off Delay Time :
60 ns
Power Dissipation-Max :
400W Tc
Tradename :
HiPerFET
Transistor Polarity :
N-Channel
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Power Dissipation :
400W
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
JEDEC-95 Code :
TO-247AD
Number of Terminations :
3
Package Shape :
RECTANGULAR
Product Type :
MOSFET
Pulsed Drain Current-Max (IDM) :
66A
Packaging :
Tube
Vgs(th) (Max) @ Id :
5.5V @ 4mA
Brand :
IXYS
Published :
2006
Number of Pins :
3
Mounting Style :
Through Hole
Gate to Source Voltage (Vgs) :
30V
Turn On Delay Time :
20 ns
DS Breakdown Voltage-Min :
600 V
Rds On (Max) @ Id, Vgs :
350m Ω @ 11A, 10V
Polarity/Channel Type :
N-Channel
Current Rating :
22A
Terminal Form :
THROUGH-HOLE
Power Dissipation (Max) :
400W (Tc)
Product Category :
MOSFET
Transistor Type :
1 N-Channel
Width :
5.3 mm
Operating Temperature :
-55°C~150°C TJ
Additional Feature :
AVALANCHE RATED
Threshold Voltage :
5.5V
Transistor Application :
SWITCHING
Subcategory :
MOSFETs
Gate Charge (Qg) (Max) @ Vgs :
58nC @ 10V
Fall Time (Typ) :
23 ns
Number of Terminals :
3
Product Status :
Active
Length :
16.26 mm
Maximum Operating Temperature :
+ 150 C
FET Feature :
--
FET Type :
N-Channel
Minimum Operating Temperature :
- 55 C
Factory Lead Time :
30 Weeks
Drain-source On Resistance-Max :
0.35 Ω
Manufacturer :
IXYS
Height :
25.96mm
Lead Free :
Lead Free
Mounting Type :
Through Hole
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Package :
Tube
Current - Continuous Drain (Id) @ 25°C :
22A Tc
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Datasheets
IXFH22N60P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFH22N60P from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-247-3, Type:PolarHV HiPerFET Power MOSFET, Number of Channels:1, Number of Terminations:3, Number of Pins:3, Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, IXFH22N60P pinout, IXFH22N60P datasheet PDF, IXFH22N60P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFH22N60P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFH22N60P


N-Channel Tube 350m Ω @ 11A, 10V ±30V 3600pF @ 25V 58nC @ 10V 600V TO-247-3

IXFH22N60P Overview


This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 1000 mJ.The maximum input capacitance of this device is 3600pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 22A.When VGS=600V, and ID flows to VDS at 600VVDS, the drain-source breakdown voltage is 600V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 60 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 66A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 20 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is 5.5V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 600 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 600V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

IXFH22N60P Features


the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 22A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 60 ns
based on its rated peak drain current 66A.
a threshold voltage of 5.5V
a 600V drain to source voltage (Vdss)


IXFH22N60P Applications


There are a lot of IXYS
IXFH22N60P applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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