IXFH22N60P
- Mfr.Part #
- IXFH22N60P
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 22A TO247AD
- Stock
- 12,013
- In Stock :
- 12,013
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Pulsed Drain Current-Max (IDM) :
- 66A
- Operating Temperature :
- -55°C~150°C TJ
- Published :
- 2006
- Max Junction Temperature (Tj) :
- 150°C
- RoHS :
- Details
- Vgs(th) (Max) @ Id :
- 5.5V @ 4mA
- Number of Elements :
- 1
- Packaging :
- Tube
- Qualification Status :
- Not Qualified
- Rds On (Max) @ Id, Vgs :
- 350m Ω @ 11A, 10V
- Element Configuration :
- Single
- Power Dissipation-Max :
- 400W Tc
- Series :
- HiPerFET™, PolarHT™
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Tradename :
- HiPerFET
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Application :
- SWITCHING
- Package / Case :
- TO-247-3
- Number of Terminations :
- 3
- Number of Channels :
- 1
- Polarity/Channel Type :
- N-Channel
- Factory Lead Time :
- 30 Weeks
- Product Category :
- MOSFET
- Length :
- 16.26 mm
- Vgs (Max) :
- ±30V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Pbfree Code :
- yes
- Additional Feature :
- AVALANCHE RATED
- Manufacturer :
- IXYS
- Product Type :
- MOSFET
- Channel Mode :
- Enhancement
- Turn-Off Delay Time :
- 60 ns
- Power Dissipation :
- 400W
- Transistor Element Material :
- SILICON
- Current - Continuous Drain (Id) @ 25°C :
- 22A Tc
- Continuous Drain Current (ID) :
- 22A
- ECCN Code :
- EAR99
- Base Product Number :
- IXFH22
- JESD-30 Code :
- R-PSFM-T3
- DS Breakdown Voltage-Min :
- 600 V
- Case Connection :
- DRAIN
- Width :
- 5.3 mm
- Mounting Type :
- Through Hole
- Lead Free :
- Lead Free
- Input Capacitance (Ciss) (Max) @ Vds :
- 3600pF @ 25V
- Height :
- 25.96mm
- Minimum Operating Temperature :
- - 55 C
- JESD-609 Code :
- e1
- Number of Terminals :
- 3
- Gate to Source Voltage (Vgs) :
- 30V
- Type :
- PolarHV HiPerFET Power MOSFET
- Reach Compliance Code :
- Compliant
- Fall Time (Typ) :
- 23 ns
- Transistor Type :
- 1 N-Channel
- Power Dissipation (Max) :
- 400W (Tc)
- Rise Time :
- 20ns
- Gate Charge (Qg) (Max) @ Vgs :
- 58nC @ 10V
- Subcategory :
- MOSFETs
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Package Shape :
- RECTANGULAR
- Mount :
- Through Hole
- Number of Pins :
- 3
- Surface Mount :
- No
- FET Type :
- N-Channel
- Current Rating :
- 22A
- Drain to Source Voltage (Vdss) :
- 600V
- Mounting Style :
- Through Hole
- Terminal Position :
- Single
- RoHS Status :
- ROHS3 Compliant
- Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Maximum Operating Temperature :
- + 150 C
- Brand :
- IXYS
- Voltage - Rated DC :
- 600V
- Terminal Form :
- THROUGH-HOLE
- Threshold Voltage :
- 5.5V
- Pin Count :
- 3
- FET Feature :
- --
- JEDEC-95 Code :
- TO-247AD
- Product Status :
- Active
- Drain to Source Breakdown Voltage :
- 600V
- Supplier Device Package :
- TO-247AD (IXFH)
- Drain-source On Resistance-Max :
- 0.35 Ω
- Turn On Delay Time :
- 20 ns
- Avalanche Energy Rating (Eas) :
- 1000 mJ
- Transistor Polarity :
- N-Channel
- Package :
- Tube
- Datasheets
- IXFH22N60P

N-Channel Tube 350m Ω @ 11A, 10V ±30V 3600pF @ 25V 58nC @ 10V 600V TO-247-3
IXFH22N60P Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 1000 mJ.The maximum input capacitance of this device is 3600pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 22A.When VGS=600V, and ID flows to VDS at 600VVDS, the drain-source breakdown voltage is 600V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 60 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 66A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 20 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is 5.5V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 600 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 600V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
IXFH22N60P Features
the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 22A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 60 ns
based on its rated peak drain current 66A.
a threshold voltage of 5.5V
a 600V drain to source voltage (Vdss)
IXFH22N60P Applications
There are a lot of IXYS
IXFH22N60P applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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