IXFH22N60P
- Mfr.Part #
- IXFH22N60P
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 22A TO247AD
- Stock
- 12,013
- In Stock :
- 12,013
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- RoHS Status :
- ROHS3 Compliant
- RoHS :
- Details
- Configuration :
- Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 3600pF @ 25V
- Voltage - Rated DC :
- 600V
- Continuous Drain Current (ID) :
- 22A
- Package / Case :
- TO-247-3
- Channel Mode :
- Enhancement
- ECCN Code :
- EAR99
- Supplier Device Package :
- TO-247AD (IXFH)
- Series :
- HiPerFET™, PolarHT™
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Case Connection :
- DRAIN
- Surface Mount :
- No
- Type :
- PolarHV HiPerFET Power MOSFET
- Element Configuration :
- Single
- Transistor Element Material :
- SILICON
- Drain to Source Voltage (Vdss) :
- 600V
- Rise Time :
- 20ns
- JESD-609 Code :
- e1
- Operating Mode :
- ENHANCEMENT MODE
- Number of Channels :
- 1
- Max Junction Temperature (Tj) :
- 150°C
- Pin Count :
- 3
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- JESD-30 Code :
- R-PSFM-T3
- Terminal Position :
- Single
- Drain to Source Breakdown Voltage :
- 600V
- Pbfree Code :
- yes
- Mount :
- Through Hole
- Reach Compliance Code :
- Compliant
- Qualification Status :
- Not Qualified
- Avalanche Energy Rating (Eas) :
- 1000 mJ
- Number of Elements :
- 1
- Base Product Number :
- IXFH22
- Vgs (Max) :
- ±30V
- Turn-Off Delay Time :
- 60 ns
- Power Dissipation-Max :
- 400W Tc
- Tradename :
- HiPerFET
- Transistor Polarity :
- N-Channel
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation :
- 400W
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- JEDEC-95 Code :
- TO-247AD
- Number of Terminations :
- 3
- Package Shape :
- RECTANGULAR
- Product Type :
- MOSFET
- Pulsed Drain Current-Max (IDM) :
- 66A
- Packaging :
- Tube
- Vgs(th) (Max) @ Id :
- 5.5V @ 4mA
- Brand :
- IXYS
- Published :
- 2006
- Number of Pins :
- 3
- Mounting Style :
- Through Hole
- Gate to Source Voltage (Vgs) :
- 30V
- Turn On Delay Time :
- 20 ns
- DS Breakdown Voltage-Min :
- 600 V
- Rds On (Max) @ Id, Vgs :
- 350m Ω @ 11A, 10V
- Polarity/Channel Type :
- N-Channel
- Current Rating :
- 22A
- Terminal Form :
- THROUGH-HOLE
- Power Dissipation (Max) :
- 400W (Tc)
- Product Category :
- MOSFET
- Transistor Type :
- 1 N-Channel
- Width :
- 5.3 mm
- Operating Temperature :
- -55°C~150°C TJ
- Additional Feature :
- AVALANCHE RATED
- Threshold Voltage :
- 5.5V
- Transistor Application :
- SWITCHING
- Subcategory :
- MOSFETs
- Gate Charge (Qg) (Max) @ Vgs :
- 58nC @ 10V
- Fall Time (Typ) :
- 23 ns
- Number of Terminals :
- 3
- Product Status :
- Active
- Length :
- 16.26 mm
- Maximum Operating Temperature :
- + 150 C
- FET Feature :
- --
- FET Type :
- N-Channel
- Minimum Operating Temperature :
- - 55 C
- Factory Lead Time :
- 30 Weeks
- Drain-source On Resistance-Max :
- 0.35 Ω
- Manufacturer :
- IXYS
- Height :
- 25.96mm
- Lead Free :
- Lead Free
- Mounting Type :
- Through Hole
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Package :
- Tube
- Current - Continuous Drain (Id) @ 25°C :
- 22A Tc
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Datasheets
- IXFH22N60P

N-Channel Tube 350m Ω @ 11A, 10V ±30V 3600pF @ 25V 58nC @ 10V 600V TO-247-3
IXFH22N60P Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 1000 mJ.The maximum input capacitance of this device is 3600pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 22A.When VGS=600V, and ID flows to VDS at 600VVDS, the drain-source breakdown voltage is 600V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 60 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 66A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 20 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is 5.5V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 600 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 600V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
IXFH22N60P Features
the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 22A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 60 ns
based on its rated peak drain current 66A.
a threshold voltage of 5.5V
a 600V drain to source voltage (Vdss)
IXFH22N60P Applications
There are a lot of IXYS
IXFH22N60P applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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