IXFH22N60P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

JEDEC-95 Code :

TO-247AD

Maximum Operating Temperature :

+ 150 C

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

58nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

22A Tc

Manufacturer :

IXYS

Lead Free :

Lead Free

Mount :

Through Hole

Element Configuration :

Single

Drain to Source Voltage (Vdss) :

600V

Pulsed Drain Current-Max (IDM) :

66A

Vgs (Max) :

±30V

JESD-30 Code :

R-PSFM-T3

Reach Compliance Code :

Compliant

Mounting Type :

Through Hole

Max Junction Temperature (Tj) :

150°C

Number of Terminals :

3

Published :

2006

Rds On (Max) @ Id, Vgs :

350m Ω @ 11A, 10V

Terminal Form :

THROUGH-HOLE

Additional Feature :

AVALANCHE RATED

Minimum Operating Temperature :

- 55 C

Package Shape :

RECTANGULAR

RoHS :

Details

Operating Mode :

ENHANCEMENT MODE

Power Dissipation (Max) :

400W (Tc)

Product Status :

Active

Threshold Voltage :

5.5V

Qualification Status :

Not Qualified

Polarity/Channel Type :

N-Channel

Brand :

IXYS

Transistor Polarity :

N-Channel

DS Breakdown Voltage-Min :

600 V

JESD-609 Code :

e1

Type :

PolarHV HiPerFET Power MOSFET

Product Category :

MOSFET

Power Dissipation :

400W

Drive Voltage (Max Rds On,Min Rds On) :

10V

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

22A

Pbfree Code :

yes

Height :

25.96mm

Gate to Source Voltage (Vgs) :

30V

Length :

16.26 mm

Input Capacitance (Ciss) (Max) @ Vds :

3600pF @ 25V

Number of Channels :

1

Channel Mode :

Enhancement

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Product Type :

MOSFET

Subcategory :

MOSFETs

Number of Elements :

1

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Surface Mount :

No

Factory Lead Time :

30 Weeks

Turn On Delay Time :

20 ns

Case Connection :

DRAIN

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Rise Time :

20ns

Terminal Position :

Single

Width :

5.3 mm

Voltage - Rated DC :

600V

FET Feature :

--

Turn-Off Delay Time :

60 ns

Package / Case :

TO-247-3

Packaging :

Tube

Configuration :

Single

Drain-source On Resistance-Max :

0.35 Ω

Drain to Source Breakdown Voltage :

600V

FET Type :

N-Channel

Package :

Tube

Number of Pins :

3

Avalanche Energy Rating (Eas) :

1000 mJ

Vgs(th) (Max) @ Id :

5.5V @ 4mA

Number of Terminations :

3

Current Rating :

22A

Series :

HiPerFET™, PolarHT™

Supplier Device Package :

TO-247AD (IXFH)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Application :

SWITCHING

Base Product Number :

IXFH22

Tradename :

HiPerFET

Power Dissipation-Max :

400W Tc

Transistor Type :

1 N-Channel

RoHS Status :

ROHS3 Compliant

Pin Count :

3

Mounting Style :

Through Hole

Fall Time (Typ) :

23 ns