IXFH22N60P

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Mfr.Part #
IXFH22N60P
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 600V 22A TO247AD
Stock
12,013
In Stock :
12,013

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Pulsed Drain Current-Max (IDM) :
66A
Operating Temperature :
-55°C~150°C TJ
Published :
2006
Max Junction Temperature (Tj) :
150°C
RoHS :
Details
Vgs(th) (Max) @ Id :
5.5V @ 4mA
Number of Elements :
1
Packaging :
Tube
Qualification Status :
Not Qualified
Rds On (Max) @ Id, Vgs :
350m Ω @ 11A, 10V
Element Configuration :
Single
Power Dissipation-Max :
400W Tc
Series :
HiPerFET™, PolarHT™
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Tradename :
HiPerFET
Operating Mode :
ENHANCEMENT MODE
Transistor Application :
SWITCHING
Package / Case :
TO-247-3
Number of Terminations :
3
Number of Channels :
1
Polarity/Channel Type :
N-Channel
Factory Lead Time :
30 Weeks
Product Category :
MOSFET
Length :
16.26 mm
Vgs (Max) :
±30V
Drive Voltage (Max Rds On,Min Rds On) :
10V
Pbfree Code :
yes
Additional Feature :
AVALANCHE RATED
Manufacturer :
IXYS
Product Type :
MOSFET
Channel Mode :
Enhancement
Turn-Off Delay Time :
60 ns
Power Dissipation :
400W
Transistor Element Material :
SILICON
Current - Continuous Drain (Id) @ 25°C :
22A Tc
Continuous Drain Current (ID) :
22A
ECCN Code :
EAR99
Base Product Number :
IXFH22
JESD-30 Code :
R-PSFM-T3
DS Breakdown Voltage-Min :
600 V
Case Connection :
DRAIN
Width :
5.3 mm
Mounting Type :
Through Hole
Lead Free :
Lead Free
Input Capacitance (Ciss) (Max) @ Vds :
3600pF @ 25V
Height :
25.96mm
Minimum Operating Temperature :
- 55 C
JESD-609 Code :
e1
Number of Terminals :
3
Gate to Source Voltage (Vgs) :
30V
Type :
PolarHV HiPerFET Power MOSFET
Reach Compliance Code :
Compliant
Fall Time (Typ) :
23 ns
Transistor Type :
1 N-Channel
Power Dissipation (Max) :
400W (Tc)
Rise Time :
20ns
Gate Charge (Qg) (Max) @ Vgs :
58nC @ 10V
Subcategory :
MOSFETs
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Package Shape :
RECTANGULAR
Mount :
Through Hole
Number of Pins :
3
Surface Mount :
No
FET Type :
N-Channel
Current Rating :
22A
Drain to Source Voltage (Vdss) :
600V
Mounting Style :
Through Hole
Terminal Position :
Single
RoHS Status :
ROHS3 Compliant
Configuration :
Single
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Maximum Operating Temperature :
+ 150 C
Brand :
IXYS
Voltage - Rated DC :
600V
Terminal Form :
THROUGH-HOLE
Threshold Voltage :
5.5V
Pin Count :
3
FET Feature :
--
JEDEC-95 Code :
TO-247AD
Product Status :
Active
Drain to Source Breakdown Voltage :
600V
Supplier Device Package :
TO-247AD (IXFH)
Drain-source On Resistance-Max :
0.35 Ω
Turn On Delay Time :
20 ns
Avalanche Energy Rating (Eas) :
1000 mJ
Transistor Polarity :
N-Channel
Package :
Tube
Datasheets
IXFH22N60P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFH22N60P from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Package / Case:TO-247-3, Number of Terminations:3, Number of Channels:1, Mounting Type:Through Hole, Type:PolarHV HiPerFET Power MOSFET, Number of Pins:3, IXFH22N60P pinout, IXFH22N60P datasheet PDF, IXFH22N60P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFH22N60P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFH22N60P


N-Channel Tube 350m Ω @ 11A, 10V ±30V 3600pF @ 25V 58nC @ 10V 600V TO-247-3

IXFH22N60P Overview


This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 1000 mJ.The maximum input capacitance of this device is 3600pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 22A.When VGS=600V, and ID flows to VDS at 600VVDS, the drain-source breakdown voltage is 600V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 60 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 66A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 20 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is 5.5V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 600 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 600V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

IXFH22N60P Features


the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 22A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 60 ns
based on its rated peak drain current 66A.
a threshold voltage of 5.5V
a 600V drain to source voltage (Vdss)


IXFH22N60P Applications


There are a lot of IXYS
IXFH22N60P applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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