IXFH22N55

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

550V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mount :

Through Hole

Package Shape :

RECTANGULAR

Number of Terminations :

3

Gate to Source Voltage (Vgs) :

20V

Manufacturer :

IXYS Corporation

Operating Mode :

ENHANCEMENT MODE

Power Dissipation (Max) :

300W (Tc)

Mounting Type :

Through Hole

Fall Time (Typ) :

40 ns

Pin Count :

3

FET Feature :

--

Power Dissipation-Max (Abs) :

300 W

Published :

2000

FET Type :

N-Channel

Power Dissipation Ambient-Max :

300 W

Rds On (Max) @ Id, Vgs :

270m Ω @ 11A, 10V

Number of Terminals :

3

Number of Pins :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Elements :

1

Drain-source On Resistance-Max :

0.27Ohm

Drain Current-Max (Abs) (ID) :

22 A

Packaging :

Tube

Current - Continuous Drain (Id) @ 25°C :

22A Tc

Power Dissipation-Max :

300W Tc

JEDEC-95 Code :

TO-247

Product Status :

Obsolete

Gate Charge (Qg) (Max) @ Vgs :

170nC @ 10V

Case Connection :

DRAIN

Package / Case :

TO-247-3

Current Rating :

22A

JESD-30 Code :

R-PSFM-T3

Reach Compliance Code :

Compliant

Continuous Drain Current (ID) :

22A

DS Breakdown Voltage-Min :

550 V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Polarity/Channel Type :

N-Channel

Turn On Time-Max (ton) :

100ns

Qualification Status :

Not Qualified

Additional Feature :

AVALANCHE RATED

Base Product Number :

IXFH22

Terminal Position :

Single

Package :

Tube

Pbfree Code :

yes

Operating Temperature :

-55°C~150°C TJ

Series :

HiPerFET™

Vgs (Max) :

±20V

Pulsed Drain Current-Max (IDM) :

88A

Surface Mount :

No

Rise Time :

43ns

RoHS Status :

RoHS Compliant

Element Configuration :

Single

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Vgs(th) (Max) @ Id :

4.5V @ 4mA

Turn Off Time-Max (toff) :

150ns

Lead Free :

Lead Free

Voltage - Rated DC :

550V

Terminal Form :

THROUGH-HOLE

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

Not Applicable

Power Dissipation :

300W

Configuration :

SINGLE WITH BUILT-IN DIODE

Input Capacitance (Ciss) (Max) @ Vds :

4200pF @ 25V

Transistor Element Material :

SILICON

Drain to Source Breakdown Voltage :

550V

Supplier Device Package :

TO-247AD (IXFH)

Turn-Off Delay Time :

70 ns