IXFH22N55
- Mfr.Part #
- IXFH22N55
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 550V 22A TO247AD
- Stock
- 4,703
- In Stock :
- 4,703
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Supplier Device Package :
- TO-247AD (IXFH)
- Power Dissipation-Max (Abs) :
- 300 W
- Gate Charge (Qg) (Max) @ Vgs :
- 170nC @ 10V
- Power Dissipation Ambient-Max :
- 300 W
- Pin Count :
- 3
- Current Rating :
- 22A
- Vgs(th) (Max) @ Id :
- 4.5V @ 4mA
- Turn On Time-Max (ton) :
- 100ns
- Power Dissipation :
- 300W
- Drain-source On Resistance-Max :
- 0.27Ohm
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Lead Free :
- Lead Free
- Published :
- 2000
- Turn Off Time-Max (toff) :
- 150ns
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Series :
- HiPerFET™
- Package / Case :
- TO-247-3
- Package :
- Tube
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Terminals :
- 3
- Packaging :
- Tube
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Base Product Number :
- IXFH22
- Qualification Status :
- Not Qualified
- Fall Time (Typ) :
- 40 ns
- Number of Pins :
- 3
- Voltage - Rated DC :
- 550V
- Gate to Source Voltage (Vgs) :
- 20V
- Transistor Element Material :
- SILICON
- Polarity/Channel Type :
- N-Channel
- Manufacturer :
- IXYS Corporation
- Reach Compliance Code :
- Compliant
- Mounting Type :
- Through Hole
- Drain to Source Breakdown Voltage :
- 550V
- Rds On (Max) @ Id, Vgs :
- 270m Ω @ 11A, 10V
- Power Dissipation-Max :
- 300W Tc
- Surface Mount :
- No
- Drain Current-Max (Abs) (ID) :
- 22 A
- Moisture Sensitivity Level (MSL) :
- Not Applicable
- Vgs (Max) :
- ±20V
- Case Connection :
- DRAIN
- JEDEC-95 Code :
- TO-247
- FET Feature :
- --
- Pbfree Code :
- yes
- Current - Continuous Drain (Id) @ 25°C :
- 22A Tc
- Element Configuration :
- Single
- Power Dissipation (Max) :
- 300W (Tc)
- Continuous Drain Current (ID) :
- 22A
- Transistor Application :
- SWITCHING
- Input Capacitance (Ciss) (Max) @ Vds :
- 4200pF @ 25V
- Operating Temperature :
- -55°C~150°C TJ
- Additional Feature :
- AVALANCHE RATED
- Number of Terminations :
- 3
- DS Breakdown Voltage-Min :
- 550 V
- Terminal Form :
- THROUGH-HOLE
- Pulsed Drain Current-Max (IDM) :
- 88A
- JESD-30 Code :
- R-PSFM-T3
- Package Shape :
- RECTANGULAR
- RoHS Status :
- RoHS Compliant
- Mount :
- Through Hole
- Turn-Off Delay Time :
- 70 ns
- Operating Mode :
- ENHANCEMENT MODE
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Number of Elements :
- 1
- FET Type :
- N-Channel
- Rise Time :
- 43ns
- Product Status :
- Obsolete
- Terminal Position :
- Single
- Drain to Source Voltage (Vdss) :
- 550V
- Datasheets
- IXFH22N55

N-Channel Tube 270m Ω @ 11A, 10V ±20V 4200pF @ 25V 170nC @ 10V 550V TO-247-3
IXFH22N55 Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 4200pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 22A amps.In this device, the drain-source breakdown voltage is 550V and VGS=550V, so the drain-source breakdown voltage is 550V in this case.A device can conduct a maximum continuous current of [22 A] according to its drain current.It is [70 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 88A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.The DS breakdown voltage should be maintained above 550 V to maintain normal operation.To operate this transistor, you will need a 550V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
IXFH22N55 Features
a continuous drain current (ID) of 22A
a drain-to-source breakdown voltage of 550V voltage
the turn-off delay time is 70 ns
based on its rated peak drain current 88A.
a 550V drain to source voltage (Vdss)
IXFH22N55 Applications
There are a lot of IXYS
IXFH22N55 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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