IXFH22N55
- Mfr.Part #
- IXFH22N55
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 550V 22A TO247AD
- Stock
- 4,703
- In Stock :
- 4,703
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Surface Mount :
- No
- Operating Mode :
- ENHANCEMENT MODE
- Vgs (Max) :
- ±20V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Gate Charge (Qg) (Max) @ Vgs :
- 170nC @ 10V
- Number of Terminals :
- 3
- Vgs(th) (Max) @ Id :
- 4.5V @ 4mA
- Power Dissipation Ambient-Max :
- 300 W
- Fall Time (Typ) :
- 40 ns
- Drain-source On Resistance-Max :
- 0.27Ohm
- Drain to Source Breakdown Voltage :
- 550V
- Gate to Source Voltage (Vgs) :
- 20V
- JESD-30 Code :
- R-PSFM-T3
- Continuous Drain Current (ID) :
- 22A
- Element Configuration :
- Single
- Turn On Time-Max (ton) :
- 100ns
- Transistor Element Material :
- SILICON
- Package Shape :
- RECTANGULAR
- Turn Off Time-Max (toff) :
- 150ns
- Series :
- HiPerFET™
- Turn-Off Delay Time :
- 70 ns
- Pulsed Drain Current-Max (IDM) :
- 88A
- Current Rating :
- 22A
- Transistor Application :
- SWITCHING
- Number of Elements :
- 1
- Drain Current-Max (Abs) (ID) :
- 22 A
- Base Product Number :
- IXFH22
- Lead Free :
- Lead Free
- Number of Terminations :
- 3
- Power Dissipation-Max :
- 300W Tc
- FET Type :
- N-Channel
- Pin Count :
- 3
- Case Connection :
- DRAIN
- Reach Compliance Code :
- Compliant
- Terminal Position :
- Single
- Terminal Form :
- THROUGH-HOLE
- JEDEC-95 Code :
- TO-247
- Rds On (Max) @ Id, Vgs :
- 270m Ω @ 11A, 10V
- Package / Case :
- TO-247-3
- Pbfree Code :
- yes
- Manufacturer :
- IXYS Corporation
- RoHS Status :
- RoHS Compliant
- Mount :
- Through Hole
- Drain to Source Voltage (Vdss) :
- 550V
- DS Breakdown Voltage-Min :
- 550 V
- Voltage - Rated DC :
- 550V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Qualification Status :
- Not Qualified
- Supplier Device Package :
- TO-247AD (IXFH)
- Mounting Type :
- Through Hole
- Additional Feature :
- AVALANCHE RATED
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Rise Time :
- 43ns
- Power Dissipation :
- 300W
- Current - Continuous Drain (Id) @ 25°C :
- 22A Tc
- Polarity/Channel Type :
- N-Channel
- Packaging :
- Tube
- FET Feature :
- --
- Power Dissipation-Max (Abs) :
- 300 W
- Input Capacitance (Ciss) (Max) @ Vds :
- 4200pF @ 25V
- Package :
- Tube
- Moisture Sensitivity Level (MSL) :
- Not Applicable
- Operating Temperature :
- -55°C~150°C TJ
- Number of Pins :
- 3
- Published :
- 2000
- Product Status :
- Obsolete
- Power Dissipation (Max) :
- 300W (Tc)
- Datasheets
- IXFH22N55

N-Channel Tube 270m Ω @ 11A, 10V ±20V 4200pF @ 25V 170nC @ 10V 550V TO-247-3
IXFH22N55 Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 4200pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 22A amps.In this device, the drain-source breakdown voltage is 550V and VGS=550V, so the drain-source breakdown voltage is 550V in this case.A device can conduct a maximum continuous current of [22 A] according to its drain current.It is [70 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 88A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.The DS breakdown voltage should be maintained above 550 V to maintain normal operation.To operate this transistor, you will need a 550V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
IXFH22N55 Features
a continuous drain current (ID) of 22A
a drain-to-source breakdown voltage of 550V voltage
the turn-off delay time is 70 ns
based on its rated peak drain current 88A.
a 550V drain to source voltage (Vdss)
IXFH22N55 Applications
There are a lot of IXYS
IXFH22N55 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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