IXFH21N50Q

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

280W Tc

Package / Case :

TO-247-3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package Shape :

RECTANGULAR

Number of Pins :

3

Package :

Tube

Avalanche Energy Rating (Eas) :

1500 mJ

Operating Temperature :

-55°C~150°C TJ

Manufacturer :

IXYS Corporation

Current - Continuous Drain (Id) @ 25°C :

21A Tc

Drain to Source Breakdown Voltage :

500V

Pulsed Drain Current-Max (IDM) :

84A

Number of Terminals :

3

Base Product Number :

IXFH21

Drain to Source Voltage (Vdss) :

500V

Mounting Type :

Through Hole

Reach Compliance Code :

Compliant

Transistor Element Material :

SILICON

Surface Mount :

No

Turn-Off Delay Time :

51 ns

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain-source On Resistance-Max :

0.25 Ω

Rds On (Max) @ Id, Vgs :

250m Ω @ 10.5A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

30V

Continuous Drain Current (ID) :

21A

Pin Count :

3

Number of Terminations :

3

Published :

2004

Terminal Position :

Single

Terminal Form :

THROUGH-HOLE

Series :

HiPerFET™

Number of Elements :

1

Supplier Device Package :

TO-247AD (IXFH)

Pbfree Code :

yes

Lead Free :

Lead Free

Mount :

Through Hole

Vgs(th) (Max) @ Id :

4.5V @ 4mA

Transistor Application :

SWITCHING

JEDEC-95 Code :

TO-247

Vgs (Max) :

±30V

Gate Charge (Qg) (Max) @ Vgs :

84nC @ 10V

FET Type :

N-Channel

Product Status :

Obsolete

Fall Time (Typ) :

12 ns

Qualification Status :

Not Qualified

FET Feature :

--

DS Breakdown Voltage-Min :

500 V

Rise Time :

28ns

Polarity/Channel Type :

N-Channel

Power Dissipation :

280W

Resistance :

250mOhm

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Additional Feature :

AVALANCHE RATED

Packaging :

Tube

JESD-30 Code :

R-PSFM-T3

Case Connection :

DRAIN

RoHS Status :

RoHS Compliant

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Power Dissipation (Max) :

280W (Tc)

Element Configuration :

Single

Factory Lead Time :

8 Weeks

Input Capacitance (Ciss) (Max) @ Vds :

3000pF @ 25V