IXFH21N50F

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Mfr.Part #
IXFH21N50F
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 500V 21A TO247
Stock
16,774
In Stock :
16,774

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Surface Mount :
No
Width :
5.3 mm
Terminal Position :
Single
Reach Compliance Code :
Compliant
Qualification Status :
Not Qualified
Channel Mode :
Enhancement
Drain to Source Breakdown Voltage :
500V
Gate Charge (Qg) (Max) @ Vgs :
77nC @ 10V
Gate to Source Voltage (Vgs) :
20V
Operating Temperature :
-55°C~150°C TJ
Power Dissipation-Max (Abs) :
300 W
Pbfree Code :
yes
Current - Continuous Drain (Id) @ 25°C :
21A Tc
Series :
HiPerRF™
Product Category :
MOSFET
ECCN Code :
EAR99
Rds On (Max) @ Id, Vgs :
250m Ω @ 10.5A, 10V
REACH SVHC :
No SVHC
Packaging :
Tube
Operating Mode :
ENHANCEMENT MODE
Transistor Element Material :
SILICON
Configuration :
Single
Pin Count :
3
Fall Time (Typ) :
7.7 ns
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Number of Channels :
1 Channel
Number of Pins :
3
Package / Case :
TO-247-3
Drive Voltage (Max Rds On,Min Rds On) :
10V
Manufacturer :
IXYS
Input Capacitance (Ciss) (Max) @ Vds :
2600pF @ 25V
Case Connection :
DRAIN
RoHS Status :
RoHS Compliant
FET Type :
N-Channel
Vgs (Max) :
±20V
Minimum Operating Temperature :
- 55 C
Brand :
IXYS
Number of Terminals :
3
Power Dissipation-Max :
300W Tc
Rise Time :
12ns
FET Technology :
METAL-OXIDE SEMICONDUCTOR
DS Breakdown Voltage-Min :
500 V
Transistor Application :
SWITCHING
Factory Lead Time :
10 Weeks
Terminal Form :
THROUGH-HOLE
Product Status :
Obsolete
Published :
2002
Drain-source On Resistance-Max :
0.25Ohm
Number of Elements :
1
JESD-30 Code :
R-PSFM-T3
Package Shape :
RECTANGULAR
Product Type :
MOSFET
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
RoHS :
Details
JESD-609 Code :
e1
Power Dissipation :
300W
Turn-Off Delay Time :
36 ns
Base Product Number :
IXFH21
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
FET Feature :
--
Supplier Device Package :
TO-247 (IXFH)
Drain to Source Voltage (Vdss) :
500V
Transistor Type :
1 N-Channel
Drain Current-Max (Abs) (ID) :
21 A
Mounting Style :
Through Hole
Additional Feature :
AVALANCHE RATED
Avalanche Energy Rating (Eas) :
1500 mJ
Pulsed Drain Current-Max (IDM) :
84A
JEDEC-95 Code :
TO-247
Mounting Type :
Through Hole
Package :
Tube
Continuous Drain Current (ID) :
21A
Length :
16.26 mm
Polarity/Channel Type :
N-Channel
Height :
21.46 mm
Power Dissipation (Max) :
300W (Tc)
Element Configuration :
Single
Number of Terminations :
3
Maximum Operating Temperature :
+ 150 C
Vgs(th) (Max) @ Id :
5.5V @ 4mA
Transistor Polarity :
N-Channel
Datasheets
IXFH21N50F
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFH21N50F from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Number of Channels:1 Channel, Number of Pins:3, Package / Case:TO-247-3, Mounting Type:Through Hole, Number of Terminations:3, IXFH21N50F pinout, IXFH21N50F datasheet PDF, IXFH21N50F amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFH21N50F ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFH21N50F


N-Channel Tube 250m Ω @ 10.5A, 10V ±20V 2600pF @ 25V 77nC @ 10V 500V TO-247-3

IXFH21N50F Overview


There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 1500 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 2600pF @ 25V.This device has a continuous drain current (ID) of [21A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=500V, the drain-source breakdown voltage is 500V.A device's drain current is its maximum continuous current, and this device's drain current is 21 A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 36 ns.A maximum pulsed drain current of 84A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 500 V.In order to operate this transistor, a voltage of 500V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

IXFH21N50F Features


the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 21A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 36 ns
based on its rated peak drain current 84A.
a 500V drain to source voltage (Vdss)


IXFH21N50F Applications


There are a lot of IXYS
IXFH21N50F applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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