IXFH21N50

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Threshold Voltage :

4V

Current - Continuous Drain (Id) @ 25°C :

21A Tc

RoHS :

Details

Input Capacitance (Ciss) (Max) @ Vds :

4200pF @ 25V

Width :

5.3 mm

Transistor Type :

1 N-Channel

ECCN Code :

EAR99

Power Dissipation-Max (Abs) :

300 W

Qualification Status :

Not Qualified

Terminal Form :

THROUGH-HOLE

Transistor Polarity :

N-Channel

Pin Count :

3

Surface Mount :

No

Mounting Style :

Through Hole

Product Status :

Not For New Designs

Brand :

IXYS

Power Dissipation Ambient-Max :

300 W

Voltage - Rated DC :

500V

Package :

Tube

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Maximum Operating Temperature :

+ 150 C

Packaging :

Tube

Package / Case :

TO-247-3

Tradename :

HyperFET

DS Breakdown Voltage-Min :

500 V

Number of Elements :

1

Mount :

Through Hole

Package Shape :

RECTANGULAR

Mounting Type :

Through Hole

Number of Pins :

3

JEDEC-95 Code :

TO-247AD

Gate to Source Voltage (Vgs) :

20V

Configuration :

Single

Drain Current-Max (Abs) (ID) :

21 A

Drain-source On Resistance-Max :

0.25 Ω

Reach Compliance Code :

Compliant

Channel Mode :

Enhancement

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Series :

HiPerFET™

Moisture Sensitivity Level (MSL) :

Not Applicable

Lead Free :

Lead Free

Number of Channels :

1 Channel

REACH SVHC :

No SVHC

Number of Terminations :

3

Length :

16.26 mm

Base Product Number :

IXFH21

Vgs(th) (Max) @ Id :

4V @ 4mA

Continuous Drain Current (ID) :

21A

Pbfree Code :

yes

Operating Temperature :

-55°C~150°C TJ

Power Dissipation (Max) :

300W (Tc)

Terminal Position :

Single

Minimum Operating Temperature :

- 55 C

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

FET Feature :

--

Rds On (Max) @ Id, Vgs :

250m Ω @ 10.5A, 10V

JESD-30 Code :

R-PSFM-T3

Fall Time (Typ) :

30 ns

Pulsed Drain Current-Max (IDM) :

84A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Rise Time :

33ns

Height :

21.46 mm

Dual Supply Voltage :

500V

Drain to Source Voltage (Vdss) :

500V

RoHS Status :

ROHS3 Compliant

Manufacturer :

IXYS

Element Configuration :

Single

Product Category :

MOSFET

Nominal Vgs :

4 V

Drain to Source Breakdown Voltage :

500V

Supplier Device Package :

TO-247AD (IXFH)

Factory Lead Time :

8 Weeks

Vgs (Max) :

±20V

Resistance :

250mOhm

Number of Terminals :

3

Current Rating :

21A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Turn-Off Delay Time :

65 ns

Published :

2002

Gate Charge (Qg) (Max) @ Vgs :

160nC @ 10V

Polarity/Channel Type :

N-Channel

Product Type :

MOSFET

FET Type :

N-Channel

Power Dissipation :

300W

Transistor Element Material :

SILICON

Case Connection :

DRAIN

Recovery Time :

250 ns

Power Dissipation-Max :

300W Tc