IXFH20N80Q
- Mfr.Part #
- IXFH20N80Q
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 800V 20A TO247AD
- Stock
- 45,074
- In Stock :
- 45,074
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Qualification Status :
- Not Qualified
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Number of Elements :
- 1
- Operating Temperature :
- -55°C~150°C TJ
- Current Rating :
- 20A
- Terminal Form :
- THROUGH-HOLE
- Terminal Position :
- Single
- Rise Time :
- 27ns
- Drain to Source Breakdown Voltage :
- 800V
- Factory Lead Time :
- 8 Weeks
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Threshold Voltage :
- 4.5V
- FET Type :
- N-Channel
- Series :
- HiPerFET™
- Number of Terminals :
- 3
- Package :
- Tube
- Supplier Device Package :
- TO-247AD (IXFH)
- RoHS Status :
- RoHS Compliant
- Pulsed Drain Current-Max (IDM) :
- 80A
- Polarity/Channel Type :
- N-Channel
- Power Dissipation-Max (Abs) :
- 360 W
- Dual Supply Voltage :
- 800V
- Pbfree Code :
- yes
- Package Shape :
- RECTANGULAR
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Power Dissipation (Max) :
- 360W (Tc)
- Case Connection :
- DRAIN
- Packaging :
- Tube
- Drain Current-Max (Abs) (ID) :
- 20 A
- Weight :
- 6g
- Element Configuration :
- Single
- Turn-Off Delay Time :
- 74 ns
- Avalanche Energy Rating (Eas) :
- 1500 mJ
- Voltage - Rated DC :
- 800V
- REACH SVHC :
- No SVHC
- Current - Continuous Drain (Id) @ 25°C :
- 20A Tc
- Continuous Drain Current (ID) :
- 20A
- Gate Charge (Qg) (Max) @ Vgs :
- 200nC @ 10V
- FET Feature :
- --
- Surface Mount :
- No
- Additional Feature :
- AVALANCHE RATED
- Mounting Type :
- Through Hole
- JESD-30 Code :
- R-PSFM-T3
- Drain to Source Voltage (Vdss) :
- 800V
- Nominal Vgs :
- 4.5 V
- Mount :
- Through Hole
- Lead Free :
- Lead Free
- Gate to Source Voltage (Vgs) :
- 20V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Vgs (Max) :
- ±20V
- Termination :
- Through Hole
- Power Dissipation :
- 360W
- Resistance :
- 420mOhm
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- JEDEC-95 Code :
- TO-247AD
- DS Breakdown Voltage-Min :
- 800 V
- Drain-source On Resistance-Max :
- 0.42 Ω
- Manufacturer :
- IXYS Corporation
- Input Capacitance (Ciss) (Max) @ Vds :
- 5100pF @ 25V
- Published :
- 2002
- Number of Pins :
- 3
- Moisture Sensitivity Level (MSL) :
- Not Applicable
- Number of Terminations :
- 3
- Reach Compliance Code :
- Compliant
- Reverse Recovery Time :
- 250 ns
- ECCN Code :
- EAR99
- Pin Count :
- 3
- Operating Mode :
- ENHANCEMENT MODE
- Package / Case :
- TO-247-3
- Product Status :
- Obsolete
- Vgs(th) (Max) @ Id :
- 4.5V @ 4mA
- Rds On (Max) @ Id, Vgs :
- 420m Ω @ 10A, 10V
- Base Product Number :
- IXFH20
- Transistor Element Material :
- SILICON
- Power Dissipation-Max :
- 360W Tc
- Fall Time (Typ) :
- 14 ns
- Datasheets
- IXFH20N80Q

N-Channel Tube 420m Ω @ 10A, 10V ±20V 5100pF @ 25V 200nC @ 10V 800V TO-247-3
IXFH20N80Q Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 1500 mJ.A device's maximum input capacitance is 5100pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 20A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=800V, and this device has a drain-to-source breakdown voltage of 800V voltage.Its drain current is 20 A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 74 ns.Its maximum pulsed drain current is 80A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of 4.5V.For normal operation, maintain the DS breakdown voltage above 800 V.To operate this transistor, you need to apply a 800V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IXFH20N80Q Features
the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 20A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 74 ns
based on its rated peak drain current 80A.
a threshold voltage of 4.5V
a 800V drain to source voltage (Vdss)
IXFH20N80Q Applications
There are a lot of IXYS
IXFH20N80Q applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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