IXFH20N80Q

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Mfr.Part #
IXFH20N80Q
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 800V 20A TO247AD
Stock
45,074
In Stock :
45,074

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Gate to Source Voltage (Vgs) :
20V
Nominal Vgs :
4.5 V
Rds On (Max) @ Id, Vgs :
420m Ω @ 10A, 10V
Transistor Element Material :
SILICON
FET Feature :
--
Published :
2002
Number of Pins :
3
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Base Product Number :
IXFH20
Drain-source On Resistance-Max :
0.42 Ω
Supplier Device Package :
TO-247AD (IXFH)
Qualification Status :
Not Qualified
Moisture Sensitivity Level (MSL) :
Not Applicable
Reach Compliance Code :
Compliant
Product Status :
Obsolete
Gate Charge (Qg) (Max) @ Vgs :
200nC @ 10V
Termination :
Through Hole
Power Dissipation (Max) :
360W (Tc)
JESD-30 Code :
R-PSFM-T3
Drain Current-Max (Abs) (ID) :
20 A
Number of Elements :
1
Turn-Off Delay Time :
74 ns
Dual Supply Voltage :
800V
Terminal Position :
Single
Series :
HiPerFET™
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Lead Free :
Lead Free
Weight :
6g
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Additional Feature :
AVALANCHE RATED
Configuration :
SINGLE WITH BUILT-IN DIODE
Operating Temperature :
-55°C~150°C TJ
Pbfree Code :
yes
Operating Mode :
ENHANCEMENT MODE
Manufacturer :
IXYS Corporation
Package / Case :
TO-247-3
Vgs (Max) :
±20V
FET Type :
N-Channel
Drive Voltage (Max Rds On,Min Rds On) :
10V
Drain to Source Breakdown Voltage :
800V
Power Dissipation :
360W
JEDEC-95 Code :
TO-247AD
Reverse Recovery Time :
250 ns
Current - Continuous Drain (Id) @ 25°C :
20A Tc
Pulsed Drain Current-Max (IDM) :
80A
Avalanche Energy Rating (Eas) :
1500 mJ
Case Connection :
DRAIN
Package :
Tube
Terminal Form :
THROUGH-HOLE
DS Breakdown Voltage-Min :
800 V
Threshold Voltage :
4.5V
Fall Time (Typ) :
14 ns
Drain to Source Voltage (Vdss) :
800V
Pin Count :
3
Number of Terminations :
3
Polarity/Channel Type :
N-Channel
Factory Lead Time :
8 Weeks
RoHS Status :
RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds :
5100pF @ 25V
Voltage - Rated DC :
800V
Power Dissipation-Max (Abs) :
360 W
Mounting Type :
Through Hole
Number of Terminals :
3
Resistance :
420mOhm
Rise Time :
27ns
Element Configuration :
Single
Surface Mount :
No
Mount :
Through Hole
Packaging :
Tube
Power Dissipation-Max :
360W Tc
Vgs(th) (Max) @ Id :
4.5V @ 4mA
REACH SVHC :
No SVHC
Package Shape :
RECTANGULAR
Current Rating :
20A
Continuous Drain Current (ID) :
20A
ECCN Code :
EAR99
Datasheets
IXFH20N80Q
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFH20N80Q from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-247-3, Number of Terminations:3, Mounting Type:Through Hole, IXFH20N80Q pinout, IXFH20N80Q datasheet PDF, IXFH20N80Q amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFH20N80Q ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFH20N80Q


N-Channel Tube 420m Ω @ 10A, 10V ±20V 5100pF @ 25V 200nC @ 10V 800V TO-247-3

IXFH20N80Q Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 1500 mJ.A device's maximum input capacitance is 5100pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 20A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=800V, and this device has a drain-to-source breakdown voltage of 800V voltage.Its drain current is 20 A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 74 ns.Its maximum pulsed drain current is 80A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of 4.5V.For normal operation, maintain the DS breakdown voltage above 800 V.To operate this transistor, you need to apply a 800V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

IXFH20N80Q Features


the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 20A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 74 ns
based on its rated peak drain current 80A.
a threshold voltage of 4.5V
a 800V drain to source voltage (Vdss)


IXFH20N80Q Applications


There are a lot of IXYS
IXFH20N80Q applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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