IXFH20N80Q
- Mfr.Part #
- IXFH20N80Q
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 800V 20A TO247AD
- Stock
- 45,074
- In Stock :
- 45,074
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate to Source Voltage (Vgs) :
- 20V
- Nominal Vgs :
- 4.5 V
- Rds On (Max) @ Id, Vgs :
- 420m Ω @ 10A, 10V
- Transistor Element Material :
- SILICON
- FET Feature :
- --
- Published :
- 2002
- Number of Pins :
- 3
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Base Product Number :
- IXFH20
- Drain-source On Resistance-Max :
- 0.42 Ω
- Supplier Device Package :
- TO-247AD (IXFH)
- Qualification Status :
- Not Qualified
- Moisture Sensitivity Level (MSL) :
- Not Applicable
- Reach Compliance Code :
- Compliant
- Product Status :
- Obsolete
- Gate Charge (Qg) (Max) @ Vgs :
- 200nC @ 10V
- Termination :
- Through Hole
- Power Dissipation (Max) :
- 360W (Tc)
- JESD-30 Code :
- R-PSFM-T3
- Drain Current-Max (Abs) (ID) :
- 20 A
- Number of Elements :
- 1
- Turn-Off Delay Time :
- 74 ns
- Dual Supply Voltage :
- 800V
- Terminal Position :
- Single
- Series :
- HiPerFET™
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Lead Free :
- Lead Free
- Weight :
- 6g
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Additional Feature :
- AVALANCHE RATED
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Operating Temperature :
- -55°C~150°C TJ
- Pbfree Code :
- yes
- Operating Mode :
- ENHANCEMENT MODE
- Manufacturer :
- IXYS Corporation
- Package / Case :
- TO-247-3
- Vgs (Max) :
- ±20V
- FET Type :
- N-Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Drain to Source Breakdown Voltage :
- 800V
- Power Dissipation :
- 360W
- JEDEC-95 Code :
- TO-247AD
- Reverse Recovery Time :
- 250 ns
- Current - Continuous Drain (Id) @ 25°C :
- 20A Tc
- Pulsed Drain Current-Max (IDM) :
- 80A
- Avalanche Energy Rating (Eas) :
- 1500 mJ
- Case Connection :
- DRAIN
- Package :
- Tube
- Terminal Form :
- THROUGH-HOLE
- DS Breakdown Voltage-Min :
- 800 V
- Threshold Voltage :
- 4.5V
- Fall Time (Typ) :
- 14 ns
- Drain to Source Voltage (Vdss) :
- 800V
- Pin Count :
- 3
- Number of Terminations :
- 3
- Polarity/Channel Type :
- N-Channel
- Factory Lead Time :
- 8 Weeks
- RoHS Status :
- RoHS Compliant
- Input Capacitance (Ciss) (Max) @ Vds :
- 5100pF @ 25V
- Voltage - Rated DC :
- 800V
- Power Dissipation-Max (Abs) :
- 360 W
- Mounting Type :
- Through Hole
- Number of Terminals :
- 3
- Resistance :
- 420mOhm
- Rise Time :
- 27ns
- Element Configuration :
- Single
- Surface Mount :
- No
- Mount :
- Through Hole
- Packaging :
- Tube
- Power Dissipation-Max :
- 360W Tc
- Vgs(th) (Max) @ Id :
- 4.5V @ 4mA
- REACH SVHC :
- No SVHC
- Package Shape :
- RECTANGULAR
- Current Rating :
- 20A
- Continuous Drain Current (ID) :
- 20A
- ECCN Code :
- EAR99
- Datasheets
- IXFH20N80Q

N-Channel Tube 420m Ω @ 10A, 10V ±20V 5100pF @ 25V 200nC @ 10V 800V TO-247-3
IXFH20N80Q Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 1500 mJ.A device's maximum input capacitance is 5100pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 20A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=800V, and this device has a drain-to-source breakdown voltage of 800V voltage.Its drain current is 20 A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 74 ns.Its maximum pulsed drain current is 80A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of 4.5V.For normal operation, maintain the DS breakdown voltage above 800 V.To operate this transistor, you need to apply a 800V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IXFH20N80Q Features
the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 20A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 74 ns
based on its rated peak drain current 80A.
a threshold voltage of 4.5V
a 800V drain to source voltage (Vdss)
IXFH20N80Q Applications
There are a lot of IXYS
IXFH20N80Q applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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