IXFH20N80P

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Mfr.Part #
IXFH20N80P
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 800V 20A TO247AD
Stock
22,353
In Stock :
22,353

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
RoHS :
Details
Minimum Operating Temperature :
- 55 C
Vgs (Max) :
±30V
Width :
5.3 mm
FET Feature :
--
Subcategory :
MOSFETs
Turn-Off Delay Time :
85 ns
Drain to Source Breakdown Voltage :
800V
Rise Time :
24ns
Package :
Tube
Pin Count :
3
FET Type :
N-Channel
Power Dissipation-Max :
500W Tc
Operating Temperature :
-55°C~150°C TJ
Manufacturer :
IXYS
Element Configuration :
Single
Additional Feature :
AVALANCHE RATED
Length :
16.26 mm
Power Dissipation (Max) :
500W (Tc)
DS Breakdown Voltage-Min :
800 V
Brand :
IXYS
JEDEC-95 Code :
TO-247AD
Avalanche Energy Rating (Eas) :
1000 mJ
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Lead Free :
Lead Free
Product Type :
MOSFET
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Height :
21.46 mm
Polarity/Channel Type :
N-Channel
Gate to Source Voltage (Vgs) :
30V
Packaging :
Tube
Supplier Device Package :
TO-247AD (IXFH)
Drain-source On Resistance-Max :
0.52Ohm
Transistor Element Material :
SILICON
Factory Lead Time :
30 Weeks
Number of Elements :
1
Operating Mode :
ENHANCEMENT MODE
Mounting Style :
Through Hole
Drive Voltage (Max Rds On,Min Rds On) :
10V
Tradename :
HiPerFET
Reach Compliance Code :
Compliant
Mounting Type :
Through Hole
Base Product Number :
IXFH20
Mount :
Through Hole
Surface Mount :
No
Transistor Application :
SWITCHING
Terminal Form :
THROUGH-HOLE
Fall Time (Typ) :
24 ns
Drain to Source Voltage (Vdss) :
800V
Configuration :
Single
Maximum Operating Temperature :
+ 150 C
Gate Charge (Qg) (Max) @ Vgs :
86nC @ 10V
Product Status :
Active
Pbfree Code :
yes
Current - Continuous Drain (Id) @ 25°C :
20A Tc
Transistor Polarity :
N-Channel
Published :
2006
Terminal Position :
Single
JESD-609 Code :
e1
Case Connection :
DRAIN
RoHS Status :
ROHS3 Compliant
Number of Terminals :
3
Package / Case :
TO-247-3
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Continuous Drain Current (ID) :
20A
Number of Channels :
1 Channel
Type :
PolarHV HiPerFET Power MOSFET
Rds On (Max) @ Id, Vgs :
520m Ω @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds :
4685pF @ 25V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Power Dissipation :
500W
Transistor Type :
1 N-Channel
Product Category :
MOSFET
JESD-30 Code :
R-PSFM-T3
Channel Mode :
Enhancement
Qualification Status :
Not Qualified
Number of Terminations :
3
Package Shape :
RECTANGULAR
Radiation Hardening :
No
Series :
HiPerFET™, PolarHT™
Vgs(th) (Max) @ Id :
5V @ 4mA
Datasheets
IXFH20N80P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFH20N80P from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, Package / Case:TO-247-3, Number of Channels:1 Channel, Type:PolarHV HiPerFET Power MOSFET, Number of Terminations:3, IXFH20N80P pinout, IXFH20N80P datasheet PDF, IXFH20N80P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFH20N80P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFH20N80P


N-Channel Tube 520m Ω @ 10A, 10V ±30V 4685pF @ 25V 86nC @ 10V 800V TO-247-3

IXFH20N80P Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 1000 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 4685pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 800V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 800V.As a result of its turn-off delay time, which is 85 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 30VV.In order for DS breakdown voltage to remain above 800 V, it should remain above the 800 V level.The transistor must receive a 800V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

IXFH20N80P Features


the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 20A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 85 ns
a 800V drain to source voltage (Vdss)


IXFH20N80P Applications


There are a lot of IXYS
IXFH20N80P applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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