IXFH20N80P
- Mfr.Part #
- IXFH20N80P
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 800V 20A TO247AD
- Stock
- 22,353
- In Stock :
- 22,353
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- RoHS :
- Details
- Minimum Operating Temperature :
- - 55 C
- Vgs (Max) :
- ±30V
- Width :
- 5.3 mm
- FET Feature :
- --
- Subcategory :
- MOSFETs
- Turn-Off Delay Time :
- 85 ns
- Drain to Source Breakdown Voltage :
- 800V
- Rise Time :
- 24ns
- Package :
- Tube
- Pin Count :
- 3
- FET Type :
- N-Channel
- Power Dissipation-Max :
- 500W Tc
- Operating Temperature :
- -55°C~150°C TJ
- Manufacturer :
- IXYS
- Element Configuration :
- Single
- Additional Feature :
- AVALANCHE RATED
- Length :
- 16.26 mm
- Power Dissipation (Max) :
- 500W (Tc)
- DS Breakdown Voltage-Min :
- 800 V
- Brand :
- IXYS
- JEDEC-95 Code :
- TO-247AD
- Avalanche Energy Rating (Eas) :
- 1000 mJ
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Lead Free :
- Lead Free
- Product Type :
- MOSFET
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Height :
- 21.46 mm
- Polarity/Channel Type :
- N-Channel
- Gate to Source Voltage (Vgs) :
- 30V
- Packaging :
- Tube
- Supplier Device Package :
- TO-247AD (IXFH)
- Drain-source On Resistance-Max :
- 0.52Ohm
- Transistor Element Material :
- SILICON
- Factory Lead Time :
- 30 Weeks
- Number of Elements :
- 1
- Operating Mode :
- ENHANCEMENT MODE
- Mounting Style :
- Through Hole
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Tradename :
- HiPerFET
- Reach Compliance Code :
- Compliant
- Mounting Type :
- Through Hole
- Base Product Number :
- IXFH20
- Mount :
- Through Hole
- Surface Mount :
- No
- Transistor Application :
- SWITCHING
- Terminal Form :
- THROUGH-HOLE
- Fall Time (Typ) :
- 24 ns
- Drain to Source Voltage (Vdss) :
- 800V
- Configuration :
- Single
- Maximum Operating Temperature :
- + 150 C
- Gate Charge (Qg) (Max) @ Vgs :
- 86nC @ 10V
- Product Status :
- Active
- Pbfree Code :
- yes
- Current - Continuous Drain (Id) @ 25°C :
- 20A Tc
- Transistor Polarity :
- N-Channel
- Published :
- 2006
- Terminal Position :
- Single
- JESD-609 Code :
- e1
- Case Connection :
- DRAIN
- RoHS Status :
- ROHS3 Compliant
- Number of Terminals :
- 3
- Package / Case :
- TO-247-3
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Continuous Drain Current (ID) :
- 20A
- Number of Channels :
- 1 Channel
- Type :
- PolarHV HiPerFET Power MOSFET
- Rds On (Max) @ Id, Vgs :
- 520m Ω @ 10A, 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 4685pF @ 25V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation :
- 500W
- Transistor Type :
- 1 N-Channel
- Product Category :
- MOSFET
- JESD-30 Code :
- R-PSFM-T3
- Channel Mode :
- Enhancement
- Qualification Status :
- Not Qualified
- Number of Terminations :
- 3
- Package Shape :
- RECTANGULAR
- Radiation Hardening :
- No
- Series :
- HiPerFET™, PolarHT™
- Vgs(th) (Max) @ Id :
- 5V @ 4mA
- Datasheets
- IXFH20N80P

N-Channel Tube 520m Ω @ 10A, 10V ±30V 4685pF @ 25V 86nC @ 10V 800V TO-247-3
IXFH20N80P Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 1000 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 4685pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 800V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 800V.As a result of its turn-off delay time, which is 85 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 30VV.In order for DS breakdown voltage to remain above 800 V, it should remain above the 800 V level.The transistor must receive a 800V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IXFH20N80P Features
the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 20A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 85 ns
a 800V drain to source voltage (Vdss)
IXFH20N80P Applications
There are a lot of IXYS
IXFH20N80P applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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