IXFH20N60Q

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Mfr.Part #
IXFH20N60Q
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 600V 20A TO247AD
Stock
22,163
In Stock :
22,163

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Series :
HiPerFET™
Power Dissipation-Max (Abs) :
300 W
Continuous Drain Current (ID) :
20A
JESD-30 Code :
R-PSFM-T3
Vgs (Max) :
±30V
Product Status :
Obsolete
Transistor Application :
SWITCHING
Number of Terminals :
3
Drain Current-Max (Abs) (ID) :
20 A
Power Dissipation :
300W
Transistor Element Material :
SILICON
Gate Charge (Qg) (Max) @ Vgs :
90nC @ 10V
Number of Pins :
3
Manufacturer :
IXYS Corporation
Rise Time :
20ns
Pbfree Code :
yes
Drain to Source Voltage (Vdss) :
600V
RoHS Status :
RoHS Compliant
JEDEC-95 Code :
TO-247AD
Drain-source On Resistance-Max :
0.35 Ω
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Packaging :
Tube
Operating Temperature :
-55°C~150°C TJ
Pin Count :
3
Radiation Hardening :
No
Element Configuration :
Single
Package / Case :
TO-247-3
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Gate to Source Voltage (Vgs) :
30V
Mounting Type :
Through Hole
Terminal Position :
Single
DS Breakdown Voltage-Min :
600 V
Rds On (Max) @ Id, Vgs :
350m Ω @ 10A, 10V
Vgs(th) (Max) @ Id :
4.5V @ 4mA
Additional Feature :
AVALANCHE RATED
Input Capacitance (Ciss) (Max) @ Vds :
3300pF @ 25V
Drain to Source Breakdown Voltage :
600V
Reach Compliance Code :
Compliant
Number of Elements :
1
Published :
2002
Number of Terminations :
3
Power Dissipation (Max) :
300W (Tc)
Package :
Tube
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Current - Continuous Drain (Id) @ 25°C :
20A Tc
Qualification Status :
Not Qualified
Drive Voltage (Max Rds On,Min Rds On) :
10V
Case Connection :
DRAIN
Avalanche Energy Rating (Eas) :
1500 mJ
Base Product Number :
IXFH20
FET Type :
N-Channel
Terminal Form :
THROUGH-HOLE
Resistance :
350mOhm
Package Shape :
RECTANGULAR
Polarity/Channel Type :
N-Channel
Operating Mode :
ENHANCEMENT MODE
Turn-Off Delay Time :
45 ns
Pulsed Drain Current-Max (IDM) :
80A
Fall Time (Typ) :
20 ns
FET Feature :
--
Mount :
Through Hole
Power Dissipation-Max :
300W Tc
Lead Free :
Lead Free
Supplier Device Package :
TO-247AD (IXFH)
Surface Mount :
No
Configuration :
SINGLE WITH BUILT-IN DIODE
Datasheets
IXFH20N60Q
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFH20N60Q from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-247-3, Mounting Type:Through Hole, Number of Terminations:3, IXFH20N60Q pinout, IXFH20N60Q datasheet PDF, IXFH20N60Q amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFH20N60Q ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFH20N60Q


N-Channel Tube 350m Ω @ 10A, 10V ±30V 3300pF @ 25V 90nC @ 10V 600V TO-247-3

IXFH20N60Q Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 1500 mJ.A device's maximal input capacitance is 3300pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 20A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 600V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 20 A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 45 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 80A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 600 V.This transistor requires a 600V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

IXFH20N60Q Features


the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 20A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 45 ns
based on its rated peak drain current 80A.
a 600V drain to source voltage (Vdss)


IXFH20N60Q Applications


There are a lot of IXYS
IXFH20N60Q applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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