IXFH20N60Q
- Mfr.Part #
- IXFH20N60Q
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 20A TO247AD
- Stock
- 22,163
- In Stock :
- 22,163
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Series :
- HiPerFET™
- Power Dissipation-Max (Abs) :
- 300 W
- Continuous Drain Current (ID) :
- 20A
- JESD-30 Code :
- R-PSFM-T3
- Vgs (Max) :
- ±30V
- Product Status :
- Obsolete
- Transistor Application :
- SWITCHING
- Number of Terminals :
- 3
- Drain Current-Max (Abs) (ID) :
- 20 A
- Power Dissipation :
- 300W
- Transistor Element Material :
- SILICON
- Gate Charge (Qg) (Max) @ Vgs :
- 90nC @ 10V
- Number of Pins :
- 3
- Manufacturer :
- IXYS Corporation
- Rise Time :
- 20ns
- Pbfree Code :
- yes
- Drain to Source Voltage (Vdss) :
- 600V
- RoHS Status :
- RoHS Compliant
- JEDEC-95 Code :
- TO-247AD
- Drain-source On Resistance-Max :
- 0.35 Ω
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Packaging :
- Tube
- Operating Temperature :
- -55°C~150°C TJ
- Pin Count :
- 3
- Radiation Hardening :
- No
- Element Configuration :
- Single
- Package / Case :
- TO-247-3
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Gate to Source Voltage (Vgs) :
- 30V
- Mounting Type :
- Through Hole
- Terminal Position :
- Single
- DS Breakdown Voltage-Min :
- 600 V
- Rds On (Max) @ Id, Vgs :
- 350m Ω @ 10A, 10V
- Vgs(th) (Max) @ Id :
- 4.5V @ 4mA
- Additional Feature :
- AVALANCHE RATED
- Input Capacitance (Ciss) (Max) @ Vds :
- 3300pF @ 25V
- Drain to Source Breakdown Voltage :
- 600V
- Reach Compliance Code :
- Compliant
- Number of Elements :
- 1
- Published :
- 2002
- Number of Terminations :
- 3
- Power Dissipation (Max) :
- 300W (Tc)
- Package :
- Tube
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Continuous Drain (Id) @ 25°C :
- 20A Tc
- Qualification Status :
- Not Qualified
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Case Connection :
- DRAIN
- Avalanche Energy Rating (Eas) :
- 1500 mJ
- Base Product Number :
- IXFH20
- FET Type :
- N-Channel
- Terminal Form :
- THROUGH-HOLE
- Resistance :
- 350mOhm
- Package Shape :
- RECTANGULAR
- Polarity/Channel Type :
- N-Channel
- Operating Mode :
- ENHANCEMENT MODE
- Turn-Off Delay Time :
- 45 ns
- Pulsed Drain Current-Max (IDM) :
- 80A
- Fall Time (Typ) :
- 20 ns
- FET Feature :
- --
- Mount :
- Through Hole
- Power Dissipation-Max :
- 300W Tc
- Lead Free :
- Lead Free
- Supplier Device Package :
- TO-247AD (IXFH)
- Surface Mount :
- No
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Datasheets
- IXFH20N60Q

N-Channel Tube 350m Ω @ 10A, 10V ±30V 3300pF @ 25V 90nC @ 10V 600V TO-247-3
IXFH20N60Q Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 1500 mJ.A device's maximal input capacitance is 3300pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 20A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 600V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 20 A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 45 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 80A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 600 V.This transistor requires a 600V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IXFH20N60Q Features
the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 20A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 45 ns
based on its rated peak drain current 80A.
a 600V drain to source voltage (Vdss)
IXFH20N60Q Applications
There are a lot of IXYS
IXFH20N60Q applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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