IXFH20N60

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Form :

THROUGH-HOLE

Vgs(th) (Max) @ Id :

4.5V @ 4mA

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

350m Ω @ 10A, 10V

Drain to Source Voltage (Vdss) :

600V

Nominal Vgs :

4.5 V

Base Product Number :

IXFH20

Turn-Off Delay Time :

70 ns

Reverse Recovery Time :

250 ns

Packaging :

Tube

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mounting Style :

Through Hole

Transistor Type :

1 N-Channel

Element Configuration :

Single

Number of Terminals :

3

Qualification Status :

Not Qualified

Product Status :

Not For New Designs

Manufacturer :

IXYS

Brand :

IXYS

JESD-30 Code :

R-PSFM-T3

Weight :

6g

Minimum Operating Temperature :

- 55 C

Gate Charge (Qg) (Max) @ Vgs :

170nC @ 10V

Vgs (Max) :

±20V

Resistance :

350mOhm

Pin Count :

3

Tradename :

HyperFET

Continuous Drain Current (ID) :

20A

Moisture Sensitivity Level (MSL) :

Not Applicable

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Dual Supply Voltage :

600V

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Power Dissipation-Max (Abs) :

300 W

FET Feature :

--

Operating Temperature :

-55°C~150°C TJ

Additional Feature :

AVALANCHE RATED

Power Dissipation-Max :

300W Tc

RoHS Status :

RoHS Compliant

Package Shape :

RECTANGULAR

ECCN Code :

EAR99

Configuration :

Single

Length :

16.26 mm

Width :

5.3 mm

Power Dissipation (Max) :

300W (Tc)

HTS Code :

8541.29.00.95

Series :

HiPerFET™

Transistor Polarity :

N-Channel

FET Technology :

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code :

e1

Number of Terminations :

3

Case Connection :

DRAIN

Threshold Voltage :

4.5V

REACH SVHC :

No SVHC

Number of Channels :

1 Channel

Transistor Element Material :

SILICON

Current Rating :

20A

Drain to Source Breakdown Voltage :

600V

Terminal Position :

Single

Number of Pins :

3

Maximum Operating Temperature :

+ 150 C

Pbfree Code :

yes

Reach Compliance Code :

Compliant

Operating Mode :

ENHANCEMENT MODE

Mount :

Through Hole

FET Type :

N-Channel

Product Category :

MOSFET

Gate to Source Voltage (Vgs) :

20V

Power Dissipation Ambient-Max :

300 W

Package :

Tube

Published :

2000

Drain-source On Resistance-Max :

0.35 Ω

Pulsed Drain Current-Max (IDM) :

80A

DS Breakdown Voltage-Min :

600 V

Number of Elements :

1

Lead Free :

Lead Free

Drain Current-Max (Abs) (ID) :

20 A

Channel Mode :

Enhancement

RoHS :

Details

JEDEC-95 Code :

TO-247

Current - Continuous Drain (Id) @ 25°C :

20A Tc

Termination :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

4500pF @ 25V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Product Type :

MOSFET

Package / Case :

TO-247-3

Fall Time (Typ) :

40 ns

Mounting Type :

Through Hole

Polarity/Channel Type :

N-Channel

Voltage - Rated DC :

600V

Rise Time :

43ns

Surface Mount :

No

Height :

21.46 mm

Power Dissipation :

300W

Supplier Device Package :

TO-247AD (IXFH)