IXFH20N50P3

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Mfr.Part #
IXFH20N50P3
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 500V 20A TO247AD
Stock
175
In Stock :
175

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Width :
5.3mm
FET Type :
N-Channel
Current - Continuous Drain (Id) @ 25°C :
20A Tc
Reach Compliance Code :
Compliant
Channel Mode :
Enhancement
Transistor Polarity :
N-Channel
Power Dissipation (Max) :
380W (Tc)
Gate to Source Voltage (Vgs) :
30V
Power Dissipation-Max :
380W Tc
Mount :
Through Hole
Series :
HiPerFET™, Polar3™
Maximum Operating Temperature :
+150 °C
Mounting Type :
Through Hole
Channel Type :
N
Package Shape :
RECTANGULAR
Polarity/Channel Type :
N-Channel
Threshold Voltage :
5V
Number of Elements per Chip :
1
Vgs(th) (Max) @ Id :
5V @ 1.5mA
Drive Voltage (Max Rds On,Min Rds On) :
10V
Tradename :
HiPerFET
Number of Channels :
1 Channel
Packaging :
Tube
Operating Temperature :
-55°C~150°C TJ
Case Connection :
DRAIN
FET Technology :
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code :
TO-247AD
Minimum Operating Temperature :
-55 °C
Product Type :
MOSFET
Package / Case :
TO-247-3
Terminal Position :
Single
Gate Charge (Qg) (Max) @ Vgs :
36nC @ 10V
JESD-30 Code :
R-PSFM-T3
REACH SVHC :
No SVHC
DS Breakdown Voltage-Min :
500V
Pin Count :
3
Turn On Delay Time :
10 ns
Avalanche Energy Rating (Eas) :
300 mJ
Configuration :
Single
Drain Current-Max (Abs) (ID) :
20 A
Operating Mode :
ENHANCEMENT MODE
FET Feature :
--
Transistor Application :
SWITCHING
Transistor Element Material :
SILICON
Drain to Source Voltage (Vdss) :
500V
Base Product Number :
IXFH20
Supplier Device Package :
TO-247AD (IXFH)
Length :
16.26mm
ECCN Code :
EAR99
Published :
2009
Vgs (Max) :
±30V
Factory Lead Time :
20 Weeks
Transistor Type :
1 N-Channel
RoHS Status :
ROHS3 Compliant
Manufacturer :
IXYS
Continuous Drain Current (ID) :
20A
Surface Mount :
No
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Rds On (Max) @ Id, Vgs :
300m Ω @ 10A, 10V
Number of Pins :
3
Number of Elements :
1
Package :
Tube
Terminal Form :
THROUGH-HOLE
Height :
21.46mm
Brand :
IXYS
Input Capacitance (Ciss) (Max) @ Vds :
1800pF @ 25V
Element Configuration :
Single
Additional Feature :
AVALANCHE RATED
Number of Terminations :
3
Product Category :
MOSFET
Mounting Style :
Through Hole
Number of Terminals :
3
Drain-source On Resistance-Max :
0.3 Ω
Product Status :
Active
RoHS :
Details
Power Dissipation-Max (Abs) :
380 W
Pulsed Drain Current-Max (IDM) :
40A
Package Type :
TO-247
Turn-Off Delay Time :
43 ns
Datasheets
IXFH20N50P3
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFH20N50P3 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Number of Channels:1 Channel, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-247-3, Number of Pins:3, Number of Terminations:3, IXFH20N50P3 pinout, IXFH20N50P3 datasheet PDF, IXFH20N50P3 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFH20N50P3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFH20N50P3


N-Channel Tube 300m Ω @ 10A, 10V ±30V 1800pF @ 25V 36nC @ 10V 500V TO-247-3

IXFH20N50P3 Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 300 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1800pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.There is no drain current on this device since the maximum continuous current it can conduct is 20 A.As a result of its turn-off delay time, which is 43 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 40A, its maximum pulsed drain current.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 10 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 30VV.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 5V.In order for DS breakdown voltage to remain above 500V, it should remain above the 500V level.The transistor must receive a 500V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

IXFH20N50P3 Features


the avalanche energy rating (Eas) is 300 mJ
a continuous drain current (ID) of 20A
the turn-off delay time is 43 ns
based on its rated peak drain current 40A.
a threshold voltage of 5V
a 500V drain to source voltage (Vdss)


IXFH20N50P3 Applications


There are a lot of IXYS
IXFH20N50P3 applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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