IXFH20N50P3
- Mfr.Part #
- IXFH20N50P3
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 20A TO247AD
- Stock
- 175
- In Stock :
- 175
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Width :
- 5.3mm
- FET Type :
- N-Channel
- Current - Continuous Drain (Id) @ 25°C :
- 20A Tc
- Reach Compliance Code :
- Compliant
- Channel Mode :
- Enhancement
- Transistor Polarity :
- N-Channel
- Power Dissipation (Max) :
- 380W (Tc)
- Gate to Source Voltage (Vgs) :
- 30V
- Power Dissipation-Max :
- 380W Tc
- Mount :
- Through Hole
- Series :
- HiPerFET™, Polar3™
- Maximum Operating Temperature :
- +150 °C
- Mounting Type :
- Through Hole
- Channel Type :
- N
- Package Shape :
- RECTANGULAR
- Polarity/Channel Type :
- N-Channel
- Threshold Voltage :
- 5V
- Number of Elements per Chip :
- 1
- Vgs(th) (Max) @ Id :
- 5V @ 1.5mA
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Tradename :
- HiPerFET
- Number of Channels :
- 1 Channel
- Packaging :
- Tube
- Operating Temperature :
- -55°C~150°C TJ
- Case Connection :
- DRAIN
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- JEDEC-95 Code :
- TO-247AD
- Minimum Operating Temperature :
- -55 °C
- Product Type :
- MOSFET
- Package / Case :
- TO-247-3
- Terminal Position :
- Single
- Gate Charge (Qg) (Max) @ Vgs :
- 36nC @ 10V
- JESD-30 Code :
- R-PSFM-T3
- REACH SVHC :
- No SVHC
- DS Breakdown Voltage-Min :
- 500V
- Pin Count :
- 3
- Turn On Delay Time :
- 10 ns
- Avalanche Energy Rating (Eas) :
- 300 mJ
- Configuration :
- Single
- Drain Current-Max (Abs) (ID) :
- 20 A
- Operating Mode :
- ENHANCEMENT MODE
- FET Feature :
- --
- Transistor Application :
- SWITCHING
- Transistor Element Material :
- SILICON
- Drain to Source Voltage (Vdss) :
- 500V
- Base Product Number :
- IXFH20
- Supplier Device Package :
- TO-247AD (IXFH)
- Length :
- 16.26mm
- ECCN Code :
- EAR99
- Published :
- 2009
- Vgs (Max) :
- ±30V
- Factory Lead Time :
- 20 Weeks
- Transistor Type :
- 1 N-Channel
- RoHS Status :
- ROHS3 Compliant
- Manufacturer :
- IXYS
- Continuous Drain Current (ID) :
- 20A
- Surface Mount :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rds On (Max) @ Id, Vgs :
- 300m Ω @ 10A, 10V
- Number of Pins :
- 3
- Number of Elements :
- 1
- Package :
- Tube
- Terminal Form :
- THROUGH-HOLE
- Height :
- 21.46mm
- Brand :
- IXYS
- Input Capacitance (Ciss) (Max) @ Vds :
- 1800pF @ 25V
- Element Configuration :
- Single
- Additional Feature :
- AVALANCHE RATED
- Number of Terminations :
- 3
- Product Category :
- MOSFET
- Mounting Style :
- Through Hole
- Number of Terminals :
- 3
- Drain-source On Resistance-Max :
- 0.3 Ω
- Product Status :
- Active
- RoHS :
- Details
- Power Dissipation-Max (Abs) :
- 380 W
- Pulsed Drain Current-Max (IDM) :
- 40A
- Package Type :
- TO-247
- Turn-Off Delay Time :
- 43 ns
- Datasheets
- IXFH20N50P3

N-Channel Tube 300m Ω @ 10A, 10V ±30V 1800pF @ 25V 36nC @ 10V 500V TO-247-3
IXFH20N50P3 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 300 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1800pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.There is no drain current on this device since the maximum continuous current it can conduct is 20 A.As a result of its turn-off delay time, which is 43 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 40A, its maximum pulsed drain current.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 10 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 30VV.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 5V.In order for DS breakdown voltage to remain above 500V, it should remain above the 500V level.The transistor must receive a 500V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IXFH20N50P3 Features
the avalanche energy rating (Eas) is 300 mJ
a continuous drain current (ID) of 20A
the turn-off delay time is 43 ns
based on its rated peak drain current 40A.
a threshold voltage of 5V
a 500V drain to source voltage (Vdss)
IXFH20N50P3 Applications
There are a lot of IXYS
IXFH20N50P3 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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