IXFH20N100P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

126nC @ 10V

JESD-609 Code :

e1

Series :

HiPerFET™, PolarP2™

Qualification Status :

Not Qualified

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-30 Code :

R-PSFM-T3

DS Breakdown Voltage-Min :

1000 V

Package / Case :

TO-247-3

Operating Temperature :

-55°C~150°C TJ

Lead Free :

Lead Free

Reach Compliance Code :

Compliant

Tradename :

HiPerFET

Gate to Source Voltage (Vgs) :

30V

Number of Terminals :

3

Configuration :

Single

Width :

5.3 mm

Package Shape :

RECTANGULAR

Factory Lead Time :

30 Weeks

Rise Time :

37ns

Element Configuration :

Single

Turn-Off Delay Time :

56 ns

Product Category :

MOSFET

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Mount :

Through Hole

Number of Channels :

1 Channel

Power Dissipation-Max :

660W Tc

RoHS :

Details

Continuous Drain Current (ID) :

20A

Power Dissipation (Max) :

660W (Tc)

Surface Mount :

No

FET Feature :

--

Type :

Polar Power MOSFET HiPerFET

Channel Mode :

Enhancement

Product Status :

Active

Product Type :

MOSFET

Packaging :

Tube

Transistor Type :

1 N-Channel

Manufacturer :

IXYS

Vgs(th) (Max) @ Id :

6.5V @ 1mA

RoHS Status :

ROHS3 Compliant

JEDEC-95 Code :

TO-247AD

Power Dissipation :

660W

Pin Count :

3

Rds On (Max) @ Id, Vgs :

570m Ω @ 10A, 10V

Drain Current-Max (Abs) (ID) :

20 A

Input Capacitance (Ciss) (Max) @ Vds :

7300pF @ 25V

Avalanche Energy Rating (Eas) :

800 mJ

Number of Terminations :

3

Polarity/Channel Type :

N-Channel

Brand :

IXYS

Supplier Device Package :

TO-247AD (IXFH)

Fall Time (Typ) :

45 ns

Published :

2008

Mounting Style :

Through Hole

Additional Feature :

AVALANCHE RATED

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

DRAIN

Transistor Application :

SWITCHING

Maximum Operating Temperature :

+ 150 C

Transistor Element Material :

SILICON

Package :

Tube

Current - Continuous Drain (Id) @ 25°C :

20A Tc

Minimum Operating Temperature :

- 55 C

Radiation Hardening :

No

Drain to Source Breakdown Voltage :

1kV

Base Product Number :

IXFH20

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Drain to Source Voltage (Vdss) :

1000V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain-source On Resistance-Max :

0.57Ohm

Pbfree Code :

yes

Power Dissipation-Max (Abs) :

660 W

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

THROUGH-HOLE

Length :

16.26 mm

Mounting Type :

Through Hole

Transistor Polarity :

N-Channel

Terminal Position :

Single

Pulsed Drain Current-Max (IDM) :

50A

Vgs (Max) :

±30V

Height :

21.46 mm