IXFH18N90P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

33ns

RoHS Status :

ROHS3 Compliant

Rds On Max :

600 mΩ

Minimum Operating Temperature :

- 55 C

Package :

Tube

Reach Compliance Code :

Compliant

Turn-Off Delay Time :

60 ns

Height :

21.46 mm

JEDEC-95 Code :

TO-247AD

Subcategory :

MOSFETs

Terminal Form :

THROUGH-HOLE

Input Capacitance :

5.23nF

Product Type :

MOSFET

JESD-30 Code :

R-PSFM-T3

Packaging :

Tube

FET Feature :

--

Series :

HiPerFET™, PolarP2™

Terminal Position :

Single

Factory Lead Time :

30 Weeks

DS Breakdown Voltage-Min :

900 V

Supplier Device Package :

TO-247AD (IXFH)

Qualification Status :

Not Qualified

Drain to Source Breakdown Voltage :

900V

Published :

2009

Surface Mount :

No

Manufacturer :

IXYS

Power Dissipation-Max :

540W Tc

Number of Channels :

1 Channel

Length :

16.26 mm

Base Product Number :

IXFH18

Operating Temperature :

-55°C~150°C TJ

REACH SVHC :

No SVHC

Mounting Style :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

97nC @ 10V

Drain-source On Resistance-Max :

0.6 Ω

Power Dissipation :

540W

Transistor Element Material :

SILICON

Max Operating Temperature :

150°C

Polarity/Channel Type :

N-Channel

Drain to Source Voltage (Vdss) :

900V

Pulsed Drain Current-Max (IDM) :

36 A

Number of Pins :

3

Min Operating Temperature :

-55°C

Transistor Type :

1 N-Channel

FET Type :

N-Channel

Number of Terminals :

3

Avalanche Energy Rating (Eas) :

800 mJ

Product Category :

MOSFET

Brand :

IXYS

Vgs (Max) :

±30V

Product Status :

Active

Continuous Drain Current (ID) :

18A

Current - Continuous Drain (Id) @ 25°C :

18A Tc

Power Dissipation-Max (Abs) :

540 W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Drain to Source Resistance :

600mOhm

Transistor Application :

SWITCHING

Element Configuration :

Single

Package Shape :

RECTANGULAR

Number of Elements :

1

Gate to Source Voltage (Vgs) :

30V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Case Connection :

DRAIN

Fall Time (Typ) :

44 ns

Transistor Polarity :

N-Channel

Configuration :

Single

Channel Mode :

Enhancement

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Width :

5.3 mm

Tradename :

HiPerFET

Input Capacitance (Ciss) (Max) @ Vds :

5230pF @ 25V

Power Dissipation (Max) :

540W (Tc)

Rds On (Max) @ Id, Vgs :

600mOhm @ 500mA, 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package / Case :

TO-247-3

RoHS :

Details

Max Power Dissipation :

540 W

Mounting Type :

Through Hole

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Maximum Operating Temperature :

+ 150 C

Drain Current-Max (Abs) (ID) :

18 A

Mount :

Through Hole

JESD-609 Code :

e1

Additional Feature :

AVALANCHE RATED

Vgs(th) (Max) @ Id :

6.5V @ 1mA