IXFH18N90P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-30 Code :

R-PSFM-T3

Transistor Polarity :

N-Channel

Series :

HiPerFET™, PolarP2™

RoHS :

Details

Additional Feature :

AVALANCHE RATED

Terminal Form :

THROUGH-HOLE

Number of Terminals :

3

Qualification Status :

Not Qualified

Length :

16.26 mm

Channel Mode :

Enhancement

Factory Lead Time :

30 Weeks

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

FET Feature :

--

Mount :

Through Hole

Manufacturer :

IXYS

Transistor Application :

SWITCHING

Surface Mount :

No

Configuration :

Single

Pulsed Drain Current-Max (IDM) :

36 A

Rise Time :

33ns

Maximum Operating Temperature :

+ 150 C

Package :

Tube

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Operating Temperature :

-55°C~150°C TJ

Polarity/Channel Type :

N-Channel

Drain Current-Max (Abs) (ID) :

18 A

Rds On (Max) @ Id, Vgs :

600mOhm @ 500mA, 10V

Subcategory :

MOSFETs

Product Type :

MOSFET

Tradename :

HiPerFET

Product Category :

MOSFET

Turn-Off Delay Time :

60 ns

Max Operating Temperature :

150°C

Reach Compliance Code :

Compliant

Published :

2009

Gate Charge (Qg) (Max) @ Vgs :

97nC @ 10V

Power Dissipation-Max (Abs) :

540 W

RoHS Status :

ROHS3 Compliant

Minimum Operating Temperature :

- 55 C

Terminal Position :

Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

DS Breakdown Voltage-Min :

900 V

Vgs (Max) :

±30V

Height :

21.46 mm

Power Dissipation-Max :

540W Tc

Package / Case :

TO-247-3

Fall Time (Typ) :

44 ns

Power Dissipation (Max) :

540W (Tc)

Number of Pins :

3

Drain to Source Voltage (Vdss) :

900V

Power Dissipation :

540W

Min Operating Temperature :

-55°C

Max Power Dissipation :

540 W

JESD-609 Code :

e1

Product Status :

Active

Continuous Drain Current (ID) :

18A

Brand :

IXYS

JEDEC-95 Code :

TO-247AD

Packaging :

Tube

Current - Continuous Drain (Id) @ 25°C :

18A Tc

Input Capacitance :

5.23nF

Supplier Device Package :

TO-247AD (IXFH)

Input Capacitance (Ciss) (Max) @ Vds :

5230pF @ 25V

Gate to Source Voltage (Vgs) :

30V

Width :

5.3 mm

Mounting Type :

Through Hole

Operating Mode :

ENHANCEMENT MODE

REACH SVHC :

No SVHC

Transistor Element Material :

SILICON

Mounting Style :

Through Hole

Drain to Source Breakdown Voltage :

900V

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Avalanche Energy Rating (Eas) :

800 mJ

Drain-source On Resistance-Max :

0.6 Ω

Number of Elements :

1

Case Connection :

DRAIN

Drain to Source Resistance :

600mOhm

Transistor Type :

1 N-Channel

Element Configuration :

Single

Package Shape :

RECTANGULAR

Base Product Number :

IXFH18

Rds On Max :

600 mΩ

Vgs(th) (Max) @ Id :

6.5V @ 1mA

Number of Channels :

1 Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)