IXFH18N90P

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Mfr.Part #
IXFH18N90P
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 900V 18A TO247AD
Stock
300
In Stock :
300

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Avalanche Energy Rating (Eas) :
800 mJ
Package Shape :
RECTANGULAR
REACH SVHC :
No SVHC
Manufacturer :
IXYS
Operating Mode :
ENHANCEMENT MODE
Channel Mode :
Enhancement
Rds On Max :
600 mΩ
Operating Temperature :
-55°C~150°C TJ
Drain-source On Resistance-Max :
0.6 Ω
Qualification Status :
Not Qualified
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Gate to Source Voltage (Vgs) :
30V
Tradename :
HiPerFET
Reach Compliance Code :
Compliant
Transistor Polarity :
N-Channel
Drain to Source Resistance :
600mOhm
Number of Channels :
1 Channel
Number of Elements :
1
Drain to Source Breakdown Voltage :
900V
Drain to Source Voltage (Vdss) :
900V
Rds On (Max) @ Id, Vgs :
600mOhm @ 500mA, 10V
Vgs (Max) :
±30V
DS Breakdown Voltage-Min :
900 V
Surface Mount :
No
Power Dissipation-Max (Abs) :
540 W
Width :
5.3 mm
Product Category :
MOSFET
JESD-609 Code :
e1
Mount :
Through Hole
Number of Terminals :
3
FET Type :
N-Channel
Case Connection :
DRAIN
Power Dissipation (Max) :
540W (Tc)
Supplier Device Package :
TO-247AD (IXFH)
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Terminal Form :
THROUGH-HOLE
Transistor Element Material :
SILICON
Power Dissipation :
540W
Power Dissipation-Max :
540W Tc
Height :
21.46 mm
Transistor Application :
SWITCHING
Turn-Off Delay Time :
60 ns
Max Operating Temperature :
150°C
Gate Charge (Qg) (Max) @ Vgs :
97nC @ 10V
Max Power Dissipation :
540 W
Element Configuration :
Single
Continuous Drain Current (ID) :
18A
RoHS :
Details
Additional Feature :
AVALANCHE RATED
Configuration :
Single
Package / Case :
TO-247-3
Mounting Type :
Through Hole
Input Capacitance (Ciss) (Max) @ Vds :
5230pF @ 25V
Factory Lead Time :
30 Weeks
FET Feature :
--
Maximum Operating Temperature :
+ 150 C
Published :
2009
Subcategory :
MOSFETs
Minimum Operating Temperature :
- 55 C
JESD-30 Code :
R-PSFM-T3
Number of Pins :
3
JEDEC-95 Code :
TO-247AD
Mounting Style :
Through Hole
Transistor Type :
1 N-Channel
Vgs(th) (Max) @ Id :
6.5V @ 1mA
RoHS Status :
ROHS3 Compliant
Product Status :
Active
Pulsed Drain Current-Max (IDM) :
36 A
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Brand :
IXYS
Product Type :
MOSFET
Drive Voltage (Max Rds On,Min Rds On) :
10V
Current - Continuous Drain (Id) @ 25°C :
18A Tc
Length :
16.26 mm
Terminal Position :
Single
Rise Time :
33ns
Input Capacitance :
5.23nF
Base Product Number :
IXFH18
Series :
HiPerFET™, PolarP2™
Fall Time (Typ) :
44 ns
Packaging :
Tube
Polarity/Channel Type :
N-Channel
Min Operating Temperature :
-55°C
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Package :
Tube
Drain Current-Max (Abs) (ID) :
18 A
Datasheets
IXFH18N90P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFH18N90P from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Number of Channels:1 Channel, Package / Case:TO-247-3, Mounting Type:Through Hole, Number of Pins:3, IXFH18N90P pinout, IXFH18N90P datasheet PDF, IXFH18N90P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFH18N90P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFH18N90P


N-Channel Tube 600mOhm @ 500mA, 10V ±30V 5230pF @ 25V 97nC @ 10V 900V TO-247-3

IXFH18N90P Overview


In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 800 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 5230pF @ 25V.This device conducts a continuous drain current (ID) of 18A, which is the maximum continuous current transistor can conduct.Using VGS=900V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 900V (that is, no charge flow from drain to source).The drain current is the maximum continuous current this device can conduct, which is 18 A.When the device is turned off, a turn-off delay time of 60 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 36 A.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 600mOhm, which means the device is not biased.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.A normal operation of the DS requires keeping the breakdown voltage above 900 V.This transistor requires a drain-source voltage (Vdss) of 900V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

IXFH18N90P Features


the avalanche energy rating (Eas) is 800 mJ
a continuous drain current (ID) of 18A
a drain-to-source breakdown voltage of 900V voltage
the turn-off delay time is 60 ns
based on its rated peak drain current 36 A.
single MOSFETs transistor is 600mOhm
a 900V drain to source voltage (Vdss)


IXFH18N90P Applications


There are a lot of IXYS
IXFH18N90P applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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