IXFH18N65X2

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

HiPerFET™, Ultra X2

Rds On (Max) @ Id, Vgs :

200m Ω @ 9A, 10V

Reach Compliance Code :

Compliant

Transistor Polarity :

N-Channel

Rise Time :

30 ns

FET Feature :

-

Configuration :

Single

Gate Charge (Qg) (Max) @ Vgs :

29nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs(th) (Max) @ Id :

5V @ 1.5mA

Current - Continuous Drain (Id) @ 25°C :

18A Tc

Power Dissipation (Max) :

290W (Tc)

Mounting Type :

Through Hole

Product Type :

MOSFET

Drain to Source Voltage (Vdss) :

650V

Power Dissipation-Max :

290W Tc

RoHS :

Details

FET Type :

N-Channel

Package :

Tube

Number of Channels :

1 Channel

Operating Temperature :

-55°C~150°C TJ

Brand :

IXYS

Input Capacitance (Ciss) (Max) @ Vds :

1520pF @ 25V

Packaging :

Tube

Supplier Device Package :

TO-247 (IXTH)

Base Product Number :

IXFH18

Product Category :

MOSFET

Mounting Style :

Through Hole

Package / Case :

TO-247-3

Tradename :

HiPerFET

Minimum Operating Temperature :

- 55 C

Transistor Type :

1 N-Channel

Product Status :

Active

Vgs (Max) :

±30V

Maximum Operating Temperature :

+ 150 C

Manufacturer :

IXYS

Subcategory :

MOSFETs

Factory Lead Time :

19 Weeks

Channel Mode :

Enhancement