IXFH18N60P
- Mfr.Part #
- IXFH18N60P
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 18A TO247AD
- Stock
- 64,166
- In Stock :
- 64,166
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Base Product Number :
- IXFH18
- Length :
- 16.26mm
- Vgs (Max) :
- ±30V
- Operating Temperature :
- -55°C~150°C TJ
- Mounting Style :
- Through Hole
- Tradename :
- HiPerFET
- Avalanche Energy Rating (Eas) :
- 1000 mJ
- FET Feature :
- --
- Number of Channels :
- 1 Channel
- Number of Terminations :
- 3
- Power Dissipation (Max) :
- 360W (Tc)
- Transistor Element Material :
- SILICON
- Supplier Device Package :
- TO-247AD (IXFH)
- JESD-30 Code :
- R-PSFM-T3
- Transistor Application :
- SWITCHING
- Factory Lead Time :
- 28 Weeks
- Lead Free :
- Lead Free
- Configuration :
- Single
- Product Category :
- MOSFET
- Current - Continuous Drain (Id) @ 25°C :
- 18A Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 50nC @ 10V
- Mount :
- Through Hole
- Turn On Delay Time :
- 21 ns
- Terminal Position :
- Single
- Maximum Operating Temperature :
- + 150 C
- Rise Time :
- 22ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 2500pF @ 25V
- Drain to Source Voltage (Vdss) :
- 600V
- Vgs(th) (Max) @ Id :
- 5.5V @ 2.5mA
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Continuous Drain Current (ID) :
- 18A
- Fall Time (Typ) :
- 22 ns
- Manufacturer :
- IXYS
- RoHS Status :
- ROHS3 Compliant
- Height :
- 21.46mm
- Power Dissipation-Max :
- 360W Tc
- Pbfree Code :
- yes
- Turn-Off Delay Time :
- 62 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS :
- Details
- JEDEC-95 Code :
- TO-247AD
- Additional Feature :
- AVALANCHE RATED
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Packaging :
- Tube
- Qualification Status :
- Not Qualified
- Product Type :
- MOSFET
- Package :
- Tube
- Surface Mount :
- No
- Reach Compliance Code :
- Unknown
- Rds On (Max) @ Id, Vgs :
- 400m Ω @ 500mA, 10V
- Power Dissipation :
- 360W
- Package / Case :
- TO-247-3
- Number of Elements :
- 1
- Subcategory :
- MOSFETs
- DS Breakdown Voltage-Min :
- 600 V
- Pin Count :
- 3
- Published :
- 2006
- Gate to Source Voltage (Vgs) :
- 30V
- Current Rating :
- 18A
- Number of Terminals :
- 3
- Number of Pins :
- 3
- Element Configuration :
- Single
- Series :
- HiPerFET™, PolarHT™
- FET Type :
- N-Channel
- Operating Mode :
- ENHANCEMENT MODE
- Terminal Form :
- THROUGH-HOLE
- Width :
- 5.3mm
- Pulsed Drain Current-Max (IDM) :
- 45A
- Voltage - Rated DC :
- 600V
- Product Status :
- Active
- Case Connection :
- DRAIN
- Transistor Polarity :
- N-Channel
- Drain to Source Breakdown Voltage :
- 600V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Brand :
- IXYS
- Package Shape :
- RECTANGULAR
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Drain-source On Resistance-Max :
- 0.4Ohm
- Minimum Operating Temperature :
- - 55 C
- Mounting Type :
- Through Hole
- Channel Mode :
- Enhancement
- Transistor Type :
- 1 N-Channel
- Polarity/Channel Type :
- N-Channel
- Datasheets
- IXFH18N60P

N-Channel Tube 400m Ω @ 500mA, 10V ±30V 2500pF @ 25V 50nC @ 10V 600V TO-247-3
IXFH18N60P Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 1000 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 2500pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 18A amps.In this device, the drain-source breakdown voltage is 600V and VGS=600V, so the drain-source breakdown voltage is 600V in this case.It is [62 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 45A.A turn-on delay time of 21 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.The DS breakdown voltage should be maintained above 600 V to maintain normal operation.To operate this transistor, you will need a 600V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
IXFH18N60P Features
the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 18A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 62 ns
based on its rated peak drain current 45A.
a 600V drain to source voltage (Vdss)
IXFH18N60P Applications
There are a lot of IXYS
IXFH18N60P applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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