IXFH18N60P

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Mfr.Part #
IXFH18N60P
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 600V 18A TO247AD
Stock
64,166
In Stock :
64,166

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Base Product Number :
IXFH18
Length :
16.26mm
Vgs (Max) :
±30V
Operating Temperature :
-55°C~150°C TJ
Mounting Style :
Through Hole
Tradename :
HiPerFET
Avalanche Energy Rating (Eas) :
1000 mJ
FET Feature :
--
Number of Channels :
1 Channel
Number of Terminations :
3
Power Dissipation (Max) :
360W (Tc)
Transistor Element Material :
SILICON
Supplier Device Package :
TO-247AD (IXFH)
JESD-30 Code :
R-PSFM-T3
Transistor Application :
SWITCHING
Factory Lead Time :
28 Weeks
Lead Free :
Lead Free
Configuration :
Single
Product Category :
MOSFET
Current - Continuous Drain (Id) @ 25°C :
18A Tc
Gate Charge (Qg) (Max) @ Vgs :
50nC @ 10V
Mount :
Through Hole
Turn On Delay Time :
21 ns
Terminal Position :
Single
Maximum Operating Temperature :
+ 150 C
Rise Time :
22ns
Input Capacitance (Ciss) (Max) @ Vds :
2500pF @ 25V
Drain to Source Voltage (Vdss) :
600V
Vgs(th) (Max) @ Id :
5.5V @ 2.5mA
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Continuous Drain Current (ID) :
18A
Fall Time (Typ) :
22 ns
Manufacturer :
IXYS
RoHS Status :
ROHS3 Compliant
Height :
21.46mm
Power Dissipation-Max :
360W Tc
Pbfree Code :
yes
Turn-Off Delay Time :
62 ns
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
RoHS :
Details
JEDEC-95 Code :
TO-247AD
Additional Feature :
AVALANCHE RATED
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Packaging :
Tube
Qualification Status :
Not Qualified
Product Type :
MOSFET
Package :
Tube
Surface Mount :
No
Reach Compliance Code :
Unknown
Rds On (Max) @ Id, Vgs :
400m Ω @ 500mA, 10V
Power Dissipation :
360W
Package / Case :
TO-247-3
Number of Elements :
1
Subcategory :
MOSFETs
DS Breakdown Voltage-Min :
600 V
Pin Count :
3
Published :
2006
Gate to Source Voltage (Vgs) :
30V
Current Rating :
18A
Number of Terminals :
3
Number of Pins :
3
Element Configuration :
Single
Series :
HiPerFET™, PolarHT™
FET Type :
N-Channel
Operating Mode :
ENHANCEMENT MODE
Terminal Form :
THROUGH-HOLE
Width :
5.3mm
Pulsed Drain Current-Max (IDM) :
45A
Voltage - Rated DC :
600V
Product Status :
Active
Case Connection :
DRAIN
Transistor Polarity :
N-Channel
Drain to Source Breakdown Voltage :
600V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Brand :
IXYS
Package Shape :
RECTANGULAR
Drive Voltage (Max Rds On,Min Rds On) :
10V
Drain-source On Resistance-Max :
0.4Ohm
Minimum Operating Temperature :
- 55 C
Mounting Type :
Through Hole
Channel Mode :
Enhancement
Transistor Type :
1 N-Channel
Polarity/Channel Type :
N-Channel
Datasheets
IXFH18N60P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFH18N60P from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Number of Channels:1 Channel, Number of Terminations:3, Package / Case:TO-247-3, Number of Pins:3, Mounting Type:Through Hole, IXFH18N60P pinout, IXFH18N60P datasheet PDF, IXFH18N60P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFH18N60P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFH18N60P


N-Channel Tube 400m Ω @ 500mA, 10V ±30V 2500pF @ 25V 50nC @ 10V 600V TO-247-3

IXFH18N60P Overview


There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 1000 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 2500pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 18A amps.In this device, the drain-source breakdown voltage is 600V and VGS=600V, so the drain-source breakdown voltage is 600V in this case.It is [62 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 45A.A turn-on delay time of 21 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.The DS breakdown voltage should be maintained above 600 V to maintain normal operation.To operate this transistor, you will need a 600V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).

IXFH18N60P Features


the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 18A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 62 ns
based on its rated peak drain current 45A.
a 600V drain to source voltage (Vdss)


IXFH18N60P Applications


There are a lot of IXYS
IXFH18N60P applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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