IXFH18N100Q3

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Type :

1 N-Channel

Length :

16.26mm

Drain-source On Resistance-Max :

0.66Ohm

ECCN Code :

EAR99

Base Product Number :

IXFH18

Published :

2009

Maximum Operating Temperature :

+150 °C

Power Dissipation :

830W

Width :

5.3mm

Qualification :

-

Drive Voltage (Max Rds On,Min Rds On) :

10V

Minimum Operating Temperature :

-55 °C

Additional Feature :

AVALANCHE RATED

Turn On Delay Time :

37 ns

Vgs(th) (Max) @ Id :

6.5V @ 4mA

Continuous Drain Current Id :

18A

REACH SVHC :

No SVHC

Rds On (Max) @ Id, Vgs :

660m Ω @ 9A, 10V

Operating Temperature :

-55°C~150°C TJ

Package :

Tube

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

18A

Turn-Off Delay Time :

40 ns

Number of Terminals :

3

Product Type :

MOSFET

Package Type :

TO-247

Manufacturer :

IXYS

Channel Type :

N

Transistor Polarity :

N-Channel

Threshold Voltage :

6.5V

Transistor Element Material :

SILICON

Power Dissipation-Max :

830W Tc

Power Dissipation (Max) :

830W (Tc)

Terminal Form :

THROUGH-HOLE

Number of Pins :

3

Element Configuration :

Single

JEDEC-95 Code :

TO-247

Current - Continuous Drain (Id) @ 25°C :

18A Tc

Reach Compliance Code :

Compliant

Mounting Type :

Through Hole

Brand :

IXYS

Pulsed Drain Current-Max (IDM) :

60A

Gate to Source Voltage (Vgs) :

30V

Fall Time (Typ) :

13 ns

Package / Case :

TO-247-3

MSL :

-

Tradename :

HiPerFET

Packaging :

Tube

Power Dissipation-Max (Abs) :

830 W

FET Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Lead Free :

Lead Free

DS Breakdown Voltage-Min :

1000 V

Avalanche Energy Rating (Eas) :

1500 mJ

Configuration :

Single

Product Category :

MOSFET

JESD-30 Code :

R-PSFM-T3

Terminal Position :

Single

Package Shape :

RECTANGULAR

Operating Mode :

ENHANCEMENT MODE

Supplier Device Package :

TO-247AD (IXFH)

Product Status :

Active

Mount :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

90nC @ 10V

Rise Time :

33ns

Factory Lead Time :

30 Weeks

FET Feature :

--

Polarity/Channel Type :

N-Channel

Drain to Source Breakdown Voltage :

1kV

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

4890pF @ 25V

Number of Terminations :

3

Case Connection :

DRAIN

Surface Mount :

No

Pin Count :

3

Drain to Source Voltage (Vdss) :

1000V

Series :

HiPerFET™

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Height :

16.26mm

Drain Current-Max (Abs) (ID) :

18 A

RoHS :

Details

Mounting Style :

Through Hole

Number of Channels :

1 Channel

Number of Elements per Chip :

1

Channel Mode :

Enhancement

Vgs (Max) :

±30V

Radiation Hardening :

No