IXFH17N80Q

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Mfr.Part #
IXFH17N80Q
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 800V 17A TO247AD
Stock
71,612
In Stock :
71,612

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Reach Compliance Code :
Compliant
Power Dissipation :
400W
Number of Channels :
1 Channel
Package / Case :
TO-247-3
Width :
5.3 mm
Current - Continuous Drain (Id) @ 25°C :
17A Tc
Drive Voltage (Max Rds On,Min Rds On) :
10V
Additional Feature :
AVALANCHE RATED
Height :
21.46 mm
Power Dissipation-Max :
400W Tc
Operating Mode :
ENHANCEMENT MODE
Power Dissipation (Max) :
400W (Tc)
Tradename :
HyperFET
Number of Elements :
1
Series :
HiPerFET™
JEDEC-95 Code :
TO-247AD
Polarity/Channel Type :
N-Channel
Product Status :
Active
JESD-30 Code :
R-PSFM-T3
Gate to Source Voltage (Vgs) :
20V
Pin Count :
3
Transistor Polarity :
N-Channel
Brand :
IXYS
Rds On Max :
600 mΩ
Fall Time (Typ) :
16 ns
DS Breakdown Voltage-Min :
800 V
RoHS Status :
ROHS3 Compliant
Drain to Source Breakdown Voltage :
800V
Supplier Device Package :
TO-247AD (IXFH)
Mounting Type :
Through Hole
Surface Mount :
No
Rise Time :
27ns
Gate Charge (Qg) (Max) @ Vgs :
95nC @ 10V
Terminal Form :
THROUGH-HOLE
Manufacturer :
IXYS
Minimum Operating Temperature :
- 55 C
Drain to Source Resistance :
600 mΩ
Vgs(th) (Max) @ Id :
4.5V @ 4mA
Element Configuration :
Single
Subcategory :
MOSFETs
Qualification Status :
Not Qualified
Number of Terminals :
3
Transistor Application :
SWITCHING
Drain to Source Voltage (Vdss) :
800V
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Configuration :
Single
Pbfree Code :
yes
Max Power Dissipation :
400 W
Input Capacitance :
3.6 nF
Vgs (Max) :
±20V
Transistor Type :
1 N-Channel
Mounting Style :
Through Hole
Packaging :
Tube
Product Type :
MOSFET
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
FET Type :
N-Channel
FET Feature :
--
Product Category :
MOSFET
Maximum Operating Temperature :
+ 150 C
Base Product Number :
IXFH17
RoHS :
Details
Transistor Element Material :
SILICON
Input Capacitance (Ciss) (Max) @ Vds :
3600pF @ 25V
Operating Temperature :
-55°C~150°C TJ
Max Operating Temperature :
150 °C
Package :
Tube
Mount :
Through Hole
Number of Pins :
3
Avalanche Energy Rating (Eas) :
1000 mJ
Length :
16.26 mm
Continuous Drain Current (ID) :
17A
Pulsed Drain Current-Max (IDM) :
68A
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Min Operating Temperature :
-55 °C
Number of Terminations :
3
Turn-Off Delay Time :
53 ns
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Case Connection :
DRAIN
Drain-source On Resistance-Max :
0.6Ohm
Rds On (Max) @ Id, Vgs :
600m Ω @ 500mA, 10V
Published :
2003
Terminal Position :
Single
Channel Mode :
Enhancement
Package Shape :
RECTANGULAR
Datasheets
IXFH17N80Q
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFH17N80Q from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1 Channel, Package / Case:TO-247-3, Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, Number of Pins:3, Number of Terminations:3, IXFH17N80Q pinout, IXFH17N80Q datasheet PDF, IXFH17N80Q amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFH17N80Q ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFH17N80Q


N-Channel Tube 600m Ω @ 500mA, 10V ±20V 3600pF @ 25V 95nC @ 10V 800V TO-247-3

IXFH17N80Q Overview


There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 1000 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 3600pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 17A amps.In this device, the drain-source breakdown voltage is 800V and VGS=800V, so the drain-source breakdown voltage is 800V in this case.It is [53 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 68A.Single MOSFETs transistor is the resistance between the drain and source of a MOSFET when the gate-to-source voltage (VGS) is applied to bias the device to the on state, and Single MOSFETs transistor is 600 mΩ.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.The DS breakdown voltage should be maintained above 800 V to maintain normal operation.To operate this transistor, you will need a 800V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).

IXFH17N80Q Features


the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 17A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 53 ns
based on its rated peak drain current 68A.
single MOSFETs transistor is 600 mΩ
a 800V drain to source voltage (Vdss)


IXFH17N80Q Applications


There are a lot of IXYS
IXFH17N80Q applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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