IXFH17N80Q
- Mfr.Part #
- IXFH17N80Q
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 800V 17A TO247AD
- Stock
- 71,612
- In Stock :
- 71,612
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Reach Compliance Code :
- Compliant
- Power Dissipation :
- 400W
- Number of Channels :
- 1 Channel
- Package / Case :
- TO-247-3
- Width :
- 5.3 mm
- Current - Continuous Drain (Id) @ 25°C :
- 17A Tc
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Additional Feature :
- AVALANCHE RATED
- Height :
- 21.46 mm
- Power Dissipation-Max :
- 400W Tc
- Operating Mode :
- ENHANCEMENT MODE
- Power Dissipation (Max) :
- 400W (Tc)
- Tradename :
- HyperFET
- Number of Elements :
- 1
- Series :
- HiPerFET™
- JEDEC-95 Code :
- TO-247AD
- Polarity/Channel Type :
- N-Channel
- Product Status :
- Active
- JESD-30 Code :
- R-PSFM-T3
- Gate to Source Voltage (Vgs) :
- 20V
- Pin Count :
- 3
- Transistor Polarity :
- N-Channel
- Brand :
- IXYS
- Rds On Max :
- 600 mΩ
- Fall Time (Typ) :
- 16 ns
- DS Breakdown Voltage-Min :
- 800 V
- RoHS Status :
- ROHS3 Compliant
- Drain to Source Breakdown Voltage :
- 800V
- Supplier Device Package :
- TO-247AD (IXFH)
- Mounting Type :
- Through Hole
- Surface Mount :
- No
- Rise Time :
- 27ns
- Gate Charge (Qg) (Max) @ Vgs :
- 95nC @ 10V
- Terminal Form :
- THROUGH-HOLE
- Manufacturer :
- IXYS
- Minimum Operating Temperature :
- - 55 C
- Drain to Source Resistance :
- 600 mΩ
- Vgs(th) (Max) @ Id :
- 4.5V @ 4mA
- Element Configuration :
- Single
- Subcategory :
- MOSFETs
- Qualification Status :
- Not Qualified
- Number of Terminals :
- 3
- Transistor Application :
- SWITCHING
- Drain to Source Voltage (Vdss) :
- 800V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Configuration :
- Single
- Pbfree Code :
- yes
- Max Power Dissipation :
- 400 W
- Input Capacitance :
- 3.6 nF
- Vgs (Max) :
- ±20V
- Transistor Type :
- 1 N-Channel
- Mounting Style :
- Through Hole
- Packaging :
- Tube
- Product Type :
- MOSFET
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- FET Type :
- N-Channel
- FET Feature :
- --
- Product Category :
- MOSFET
- Maximum Operating Temperature :
- + 150 C
- Base Product Number :
- IXFH17
- RoHS :
- Details
- Transistor Element Material :
- SILICON
- Input Capacitance (Ciss) (Max) @ Vds :
- 3600pF @ 25V
- Operating Temperature :
- -55°C~150°C TJ
- Max Operating Temperature :
- 150 °C
- Package :
- Tube
- Mount :
- Through Hole
- Number of Pins :
- 3
- Avalanche Energy Rating (Eas) :
- 1000 mJ
- Length :
- 16.26 mm
- Continuous Drain Current (ID) :
- 17A
- Pulsed Drain Current-Max (IDM) :
- 68A
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Min Operating Temperature :
- -55 °C
- Number of Terminations :
- 3
- Turn-Off Delay Time :
- 53 ns
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Case Connection :
- DRAIN
- Drain-source On Resistance-Max :
- 0.6Ohm
- Rds On (Max) @ Id, Vgs :
- 600m Ω @ 500mA, 10V
- Published :
- 2003
- Terminal Position :
- Single
- Channel Mode :
- Enhancement
- Package Shape :
- RECTANGULAR
- Datasheets
- IXFH17N80Q

N-Channel Tube 600m Ω @ 500mA, 10V ±20V 3600pF @ 25V 95nC @ 10V 800V TO-247-3
IXFH17N80Q Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 1000 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 3600pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 17A amps.In this device, the drain-source breakdown voltage is 800V and VGS=800V, so the drain-source breakdown voltage is 800V in this case.It is [53 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 68A.Single MOSFETs transistor is the resistance between the drain and source of a MOSFET when the gate-to-source voltage (VGS) is applied to bias the device to the on state, and Single MOSFETs transistor is 600 mΩ.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.The DS breakdown voltage should be maintained above 800 V to maintain normal operation.To operate this transistor, you will need a 800V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
IXFH17N80Q Features
the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 17A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 53 ns
based on its rated peak drain current 68A.
single MOSFETs transistor is 600 mΩ
a 800V drain to source voltage (Vdss)
IXFH17N80Q Applications
There are a lot of IXYS
IXFH17N80Q applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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