IXFH170N10P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Package Type :

TO-247

Pulsed Drain Current-Max (IDM) :

350 A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Tradename :

HiPerFET

Mounting Type :

Through Hole

Number of Pins :

3

RoHS :

Details

Gate to Source Voltage (Vgs) :

20V

Additional Feature :

AVALANCHE RATED

Power Dissipation-Max :

715W Tc

Number of Elements :

1

JESD-30 Code :

R-PSFM-T3

Power Dissipation :

714W

Operating Temperature :

-55°C~175°C TJ

RoHS Status :

ROHS3 Compliant

Drain to Source Resistance :

9 mΩ

Rds On Max :

9 mΩ

Base Product Number :

IXFH170

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Mounting Style :

Through Hole

Pin Count :

3

Qualification :

-

ECCN Code :

EAR99

Power Dissipation (Max) :

715W (Tc)

Current - Continuous Drain (Id) @ 25°C :

170A Tc

Max Power Dissipation :

714 W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Delay Time :

35 ns

Reach Compliance Code :

Compliant

FET Type :

N-Channel

Transistor Polarity :

N-Channel

Turn-On Delay Time :

35 ns

Package / Case :

TO-247-3

Width :

5.3mm

Lead Free :

Lead Free

Drain-source On Resistance-Max :

0.009 Ω

Pbfree Code :

yes

Height :

21.46mm

Min Operating Temperature :

-55 °C

Radiation Hardening :

No

Max Operating Temperature :

175 °C

Maximum Operating Temperature :

+175 °C

Transistor Type :

1 N-Channel

Gate Charge (Qg) (Max) @ Vgs :

198nC @ 10V

JEDEC-95 Code :

TO-247AD

Package Shape :

RECTANGULAR

Resistance :

9mOhm

Qualification Status :

Not Qualified

Mount :

Through Hole

Product Category :

MOSFET

Avalanche Energy Rating (Eas) :

2000 mJ

Drain Current-Max (Abs) (ID) :

170 A

Type :

PolarHT HiPerFET Power MOSFET

Power Dissipation-Max (Abs) :

715 W

REACH SVHC :

No SVHC

Series :

HiPerFET™, PolarP2™

Channel Mode :

Enhancement

Case Connection :

DRAIN

Terminal Position :

Single

Configuration :

Single

Input Capacitance (Ciss) (Max) @ Vds :

6000pF @ 25V

Vgs(th) (Max) @ Id :

5V @ 4mA

Published :

2006

Product Status :

Active

Number of Terminals :

3

Transistor Element Material :

SILICON

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

9m Ω @ 500mA, 10V

Packaging :

Tube

Number of Elements per Chip :

1

Input Capacitance :

6 nF

FET Feature :

--

DS Breakdown Voltage-Min :

100 V

Supplier Device Package :

TO-247AD (IXFH)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Minimum Operating Temperature :

-55 °C

Element Configuration :

Single

Turn-Off Delay Time :

90 ns

Terminal Form :

THROUGH-HOLE

Number of Terminations :

3

Length :

16.26mm

Product Type :

MOSFET

Brand :

IXYS

Number of Channels :

1 Channel

Channel Type :

N

Continuous Drain Current Id :

170A

Rise Time :

50ns

Surface Mount :

No

Transistor Application :

SWITCHING

Drain to Source Voltage (Vdss) :

100V

Polarity/Channel Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Threshold Voltage :

5V

Fall Time (Typ) :

33 ns

Continuous Drain Current (ID) :

170A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Manufacturer :

IXYS

Drain to Source Breakdown Voltage :

100V

Factory Lead Time :

30 Weeks

Package :

Tube

MSL :

-

JESD-609 Code :

e1