IXFH16N80P

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Mfr.Part #
IXFH16N80P
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 800V 16A TO247AD
Stock
44,535
In Stock :
44,535

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C :
16A Tc
Minimum Operating Temperature :
- 55 C
Drain-source On Resistance-Max :
0.6 Ω
Operating Mode :
ENHANCEMENT MODE
Transistor Element Material :
SILICON
Power Dissipation (Max) :
460W (Tc)
Package / Case :
TO-247-3
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Input Capacitance (Ciss) (Max) @ Vds :
4600pF @ 25V
Rds On (Max) @ Id, Vgs :
600m Ω @ 500mA, 10V
Transistor Type :
1 N-Channel
Series :
HiPerFET™, PolarHT™
Number of Terminations :
3
Vgs (Max) :
±30V
DS Breakdown Voltage-Min :
800 V
JEDEC-95 Code :
TO-247AD
Number of Elements :
1
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Brand :
IXYS
Power Dissipation-Max :
460W Tc
Base Product Number :
IXFH16
Drive Voltage (Max Rds On,Min Rds On) :
10V
Threshold Voltage :
5V
Additional Feature :
AVALANCHE RATED
JESD-609 Code :
e1
Maximum Operating Temperature :
+ 150 C
Package Shape :
RECTANGULAR
Drain to Source Voltage (Vdss) :
800V
Polarity/Channel Type :
N-Channel
Product Status :
Active
Transistor Polarity :
N-Channel
Manufacturer :
IXYS
Mounting Type :
Through Hole
Fall Time (Typ) :
29 ns
Number of Pins :
3
RoHS Status :
ROHS3 Compliant
Configuration :
Single
Factory Lead Time :
30 Weeks
Supplier Device Package :
TO-247AD (IXFH)
Terminal Form :
THROUGH-HOLE
Continuous Drain Current (ID) :
16A
Rise Time :
32ns
Length :
16.26 mm
Gate to Source Voltage (Vgs) :
30V
Number of Channels :
1 Channel
Type :
PolarHV Power MOSFET
Resistance :
600mOhm
Pbfree Code :
yes
Continuous Drain Current Id :
16A
Transistor Application :
SWITCHING
Drain to Source Breakdown Voltage :
800V
Terminal Position :
Single
Product Type :
MOSFET
Product Category :
MOSFET
MSL :
-
FET Type :
N-Channel
Power Dissipation :
460W
FET Technology :
METAL-OXIDE SEMICONDUCTOR
RoHS :
Details
Subcategory :
MOSFETs
Qualification Status :
Not Qualified
Radiation Hardening :
No
JESD-30 Code :
R-PSFM-T3
Reach Compliance Code :
Compliant
Height :
21.46 mm
Width :
5.3 mm
Vgs(th) (Max) @ Id :
5V @ 4mA
Element Configuration :
Single
FET Feature :
--
Operating Temperature :
-55°C~150°C TJ
Surface Mount :
No
Package :
Tube
Number of Terminals :
3
Channel Mode :
Enhancement
ECCN Code :
EAR99
Packaging :
Tube
Mounting Style :
Through Hole
Qualification :
-
Avalanche Energy Rating (Eas) :
1000 mJ
Channel Type :
N Channel
Published :
2006
REACH SVHC :
No SVHC
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Turn-Off Delay Time :
75 ns
Mount :
Through Hole
Lead Free :
Lead Free
Pin Count :
3
Gate Charge (Qg) (Max) @ Vgs :
71nC @ 10V
Tradename :
HiPerFET
Datasheets
IXFH16N80P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFH16N80P from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-247-3, Number of Terminations:3, Mounting Type:Through Hole, Number of Pins:3, Number of Channels:1 Channel, Type:PolarHV Power MOSFET, Operating Temperature:-55°C~150°C TJ, IXFH16N80P pinout, IXFH16N80P datasheet PDF, IXFH16N80P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFH16N80P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFH16N80P


N-Channel Tube 600m Ω @ 500mA, 10V ±30V 4600pF @ 25V 71nC @ 10V 800V TO-247-3

IXFH16N80P Overview


This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 1000 mJ.The maximum input capacitance of this device is 4600pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 16A.When VGS=800V, and ID flows to VDS at 800VVDS, the drain-source breakdown voltage is 800V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 75 ns.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is 5V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 800 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 800V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

IXFH16N80P Features


the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 16A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 75 ns
a threshold voltage of 5V
a 800V drain to source voltage (Vdss)


IXFH16N80P Applications


There are a lot of IXYS
IXFH16N80P applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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