IXFH16N60P3

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Through Hole

Series :

HiPerFET™

Drain-source On Resistance-Max :

0.44Ohm

Terminal Position :

Single

Number of Elements :

1

Pulsed Drain Current-Max (IDM) :

40A

Transistor Application :

SWITCHING

Package Shape :

RECTANGULAR

Additional Feature :

AVALANCHE RATED

Gate Charge (Qg) (Max) @ Vgs :

36nC @ 10V

Drain to Source Voltage (Vdss) :

600V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Transistor Element Material :

SILICON

Vgs (Max) :

±30V

FET Type :

N-Channel

Terminal Form :

THROUGH-HOLE

JESD-30 Code :

R-PSFM-T3

Vgs(th) (Max) @ Id :

5V @ 1.5mA

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation-Max (Abs) :

347 W

Avalanche Energy Rating (Eas) :

800 mJ

JEDEC-95 Code :

TO-247AD

Current - Continuous Drain (Id) @ 25°C :

16A Tc

Operating Temperature :

-55°C~150°C TJ

Base Product Number :

IXFH16

Number of Terminals :

3

Power Dissipation-Max :

347W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Feature :

--

Factory Lead Time :

24 Weeks

Continuous Drain Current (ID) :

16A

DS Breakdown Voltage-Min :

600V

Packaging :

Tube

Package / Case :

TO-247-3

Reach Compliance Code :

Compliant

Supplier Device Package :

TO-247

Drain Current-Max (Abs) (ID) :

16 A

Mounting Type :

Through Hole

Pin Count :

3

Number of Terminations :

3

Package :

Tube

Rds On (Max) @ Id, Vgs :

470m Ω @ 500mA, 10V

Case Connection :

DRAIN

Surface Mount :

No

RoHS Status :

ROHS3 Compliant

Product Status :

Active

Power Dissipation (Max) :

347W (Tc)

Configuration :

SINGLE WITH BUILT-IN DIODE

Input Capacitance (Ciss) (Max) @ Vds :

1830pF @ 25V

Polarity/Channel Type :

N-Channel

Manufacturer :

IXYS Corporation

Operating Mode :

ENHANCEMENT MODE

Published :

2012