IXFH16N50P3
- Mfr.Part #
- IXFH16N50P3
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 16A TO247AD
- Stock
- 8,612
- In Stock :
- 8,612
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Turn-On Delay Time :
- 19 ns
- Manufacturer :
- IXYS
- Minimum Operating Temperature :
- -55 °C
- Pulsed Drain Current-Max (IDM) :
- 40A
- Published :
- 2013
- Drain to Source Voltage (Vdss) :
- 500V
- FET Feature :
- --
- Drain-source On Resistance-Max :
- 0.36 Ω
- RoHS Status :
- ROHS3 Compliant
- Current - Continuous Drain (Id) @ 25°C :
- 16A Tc
- Power Dissipation (Max) :
- 330W (Tc)
- Input Capacitance (Ciss) (Max) @ Vds :
- 1515pF @ 25V
- Factory Lead Time :
- 20 Weeks
- Terminal Form :
- THROUGH-HOLE
- Channel Mode :
- Enhancement
- Base Product Number :
- IXFH16
- Packaging :
- Tube
- Product Type :
- MOSFET
- Mounting Type :
- Through Hole
- Min Operating Temperature :
- -55 °C
- Reach Compliance Code :
- Compliant
- Package / Case :
- TO-247-3
- Brand :
- IXYS
- Number of Pins :
- 3
- Number of Terminals :
- 3
- Package Shape :
- RECTANGULAR
- Vgs(th) (Max) @ Id :
- 5V @ 2.5mA
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Maximum Operating Temperature :
- +150 °C
- Mount :
- Through Hole
- Gate Charge (Qg) (Max) @ Vgs :
- 29nC @ 10V
- Transistor Type :
- 1 N-Channel
- Vgs (Max) :
- ±30V
- Width :
- 5.3mm
- Tradename :
- HiPerFET
- Mounting Style :
- Through Hole
- Series :
- HiPerFET™, Polar3™
- Height :
- 21.46mm
- Turn On Delay Time :
- 19 ns
- Input Capacitance :
- 1.515 nF
- Configuration :
- Single
- Drain Current-Max (Abs) (ID) :
- 16 A
- Transistor Polarity :
- N-Channel
- JESD-30 Code :
- R-PSFM-T3
- Avalanche Energy Rating (Eas) :
- 300 mJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 3
- Channel Type :
- N
- Power Dissipation-Max (Abs) :
- 330 W
- Additional Feature :
- AVALANCHE RATED
- Package :
- Tube
- Max Power Dissipation :
- 330 W
- Product Category :
- MOSFET
- Continuous Drain Current (ID) :
- 16A
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Case Connection :
- DRAIN
- Power Dissipation-Max :
- 330W Tc
- Gate to Source Voltage (Vgs) :
- 30V
- Product Status :
- Active
- FET Type :
- N-Channel
- Drain to Source Resistance :
- 360 mΩ
- RoHS :
- Details
- Element Configuration :
- Single
- JEDEC-95 Code :
- TO-247AD
- Number of Elements per Chip :
- 1
- Polarity/Channel Type :
- N-Channel
- Transistor Element Material :
- SILICON
- Terminal Position :
- Single
- Max Operating Temperature :
- 150 °C
- Operating Mode :
- ENHANCEMENT MODE
- Rds On Max :
- 360 mΩ
- Number of Elements :
- 1
- Turn-Off Delay Time :
- 44 ns
- Surface Mount :
- No
- Package Type :
- TO-247
- Supplier Device Package :
- TO-247AD (IXFH)
- Pin Count :
- 3
- Transistor Application :
- SWITCHING
- DS Breakdown Voltage-Min :
- 500V
- Number of Channels :
- 1 Channel
- Operating Temperature :
- -55°C~150°C TJ
- Rds On (Max) @ Id, Vgs :
- 360m Ω @ 8A, 10V
- Length :
- 16.26mm
- Datasheets
- IXFH16N50P3

N-Channel Tube 360m Ω @ 8A, 10V ±30V 1515pF @ 25V 29nC @ 10V 500V TO-247-3
IXFH16N50P3 Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 300 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 1515pF @ 25V.This device has a continuous drain current (ID) of [16A], which is its maximum continuous current.A device's drain current is its maximum continuous current, and this device's drain current is 16 A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 44 ns.A maximum pulsed drain current of 40A is the maximum peak drain current rated for this device.MOSFETs have 360 mΩ resistance between the drain and the source when biased into the on state by a gate-to-source voltage (VGS).During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 19 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 500V.In order to operate this transistor, a voltage of 500V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IXFH16N50P3 Features
the avalanche energy rating (Eas) is 300 mJ
a continuous drain current (ID) of 16A
the turn-off delay time is 44 ns
based on its rated peak drain current 40A.
single MOSFETs transistor is 360 mΩ
a 500V drain to source voltage (Vdss)
IXFH16N50P3 Applications
There are a lot of IXYS
IXFH16N50P3 applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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