IXFH16N50P3

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Mfr.Part #
IXFH16N50P3
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 500V 16A TO247AD
Stock
8,612
In Stock :
8,612

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Input Capacitance (Ciss) (Max) @ Vds :
1515pF @ 25V
Maximum Operating Temperature :
+150 °C
Channel Mode :
Enhancement
Factory Lead Time :
20 Weeks
Manufacturer :
IXYS
Published :
2013
Polarity/Channel Type :
N-Channel
Tradename :
HiPerFET
Turn On Delay Time :
19 ns
FET Feature :
--
Transistor Polarity :
N-Channel
Terminal Position :
Single
Transistor Type :
1 N-Channel
Current - Continuous Drain (Id) @ 25°C :
16A Tc
JESD-30 Code :
R-PSFM-T3
Rds On (Max) @ Id, Vgs :
360m Ω @ 8A, 10V
Continuous Drain Current (ID) :
16A
Reach Compliance Code :
Compliant
Packaging :
Tube
Drive Voltage (Max Rds On,Min Rds On) :
10V
FET Type :
N-Channel
Turn-On Delay Time :
19 ns
Number of Terminals :
3
Gate Charge (Qg) (Max) @ Vgs :
29nC @ 10V
Mounting Type :
Through Hole
Additional Feature :
AVALANCHE RATED
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Avalanche Energy Rating (Eas) :
300 mJ
Pulsed Drain Current-Max (IDM) :
40A
Mounting Style :
Through Hole
Product Category :
MOSFET
Drain Current-Max (Abs) (ID) :
16 A
Supplier Device Package :
TO-247AD (IXFH)
Transistor Application :
SWITCHING
Turn-Off Delay Time :
44 ns
Number of Terminations :
3
Package Type :
TO-247
Gate to Source Voltage (Vgs) :
30V
Power Dissipation-Max :
330W Tc
Transistor Element Material :
SILICON
Rds On Max :
360 mΩ
Input Capacitance :
1.515 nF
Package Shape :
RECTANGULAR
Pin Count :
3
Channel Type :
N
Number of Elements :
1
Terminal Form :
THROUGH-HOLE
Power Dissipation (Max) :
330W (Tc)
Power Dissipation-Max (Abs) :
330 W
Height :
21.46mm
Drain to Source Resistance :
360 mΩ
Brand :
IXYS
Surface Mount :
No
JEDEC-95 Code :
TO-247AD
Mount :
Through Hole
Base Product Number :
IXFH16
Drain to Source Voltage (Vdss) :
500V
Vgs(th) (Max) @ Id :
5V @ 2.5mA
RoHS Status :
ROHS3 Compliant
Length :
16.26mm
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Minimum Operating Temperature :
-55 °C
Number of Elements per Chip :
1
Element Configuration :
Single
RoHS :
Details
Case Connection :
DRAIN
Vgs (Max) :
±30V
Configuration :
Single
Drain-source On Resistance-Max :
0.36 Ω
Width :
5.3mm
Operating Mode :
ENHANCEMENT MODE
Operating Temperature :
-55°C~150°C TJ
Max Power Dissipation :
330 W
Package / Case :
TO-247-3
Product Status :
Active
Max Operating Temperature :
150 °C
Package :
Tube
Number of Channels :
1 Channel
Number of Pins :
3
DS Breakdown Voltage-Min :
500V
Series :
HiPerFET™, Polar3™
Product Type :
MOSFET
Min Operating Temperature :
-55 °C
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFH16N50P3 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-247-3, Number of Channels:1 Channel, Number of Pins:3, IXFH16N50P3 pinout, IXFH16N50P3 datasheet PDF, IXFH16N50P3 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFH16N50P3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFH16N50P3


N-Channel Tube 360m Ω @ 8A, 10V ±30V 1515pF @ 25V 29nC @ 10V 500V TO-247-3

IXFH16N50P3 Overview


There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 300 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 1515pF @ 25V.This device has a continuous drain current (ID) of [16A], which is its maximum continuous current.A device's drain current is its maximum continuous current, and this device's drain current is 16 A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 44 ns.A maximum pulsed drain current of 40A is the maximum peak drain current rated for this device.MOSFETs have 360 mΩ resistance between the drain and the source when biased into the on state by a gate-to-source voltage (VGS).During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 19 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 500V.In order to operate this transistor, a voltage of 500V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

IXFH16N50P3 Features


the avalanche energy rating (Eas) is 300 mJ
a continuous drain current (ID) of 16A
the turn-off delay time is 44 ns
based on its rated peak drain current 40A.
single MOSFETs transistor is 360 mΩ
a 500V drain to source voltage (Vdss)


IXFH16N50P3 Applications


There are a lot of IXYS
IXFH16N50P3 applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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