IXFH16N50P3
- Mfr.Part #
- IXFH16N50P3
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 16A TO247AD
- Stock
- 8,612
- In Stock :
- 8,612
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 1515pF @ 25V
- Maximum Operating Temperature :
- +150 °C
- Channel Mode :
- Enhancement
- Factory Lead Time :
- 20 Weeks
- Manufacturer :
- IXYS
- Published :
- 2013
- Polarity/Channel Type :
- N-Channel
- Tradename :
- HiPerFET
- Turn On Delay Time :
- 19 ns
- FET Feature :
- --
- Transistor Polarity :
- N-Channel
- Terminal Position :
- Single
- Transistor Type :
- 1 N-Channel
- Current - Continuous Drain (Id) @ 25°C :
- 16A Tc
- JESD-30 Code :
- R-PSFM-T3
- Rds On (Max) @ Id, Vgs :
- 360m Ω @ 8A, 10V
- Continuous Drain Current (ID) :
- 16A
- Reach Compliance Code :
- Compliant
- Packaging :
- Tube
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- FET Type :
- N-Channel
- Turn-On Delay Time :
- 19 ns
- Number of Terminals :
- 3
- Gate Charge (Qg) (Max) @ Vgs :
- 29nC @ 10V
- Mounting Type :
- Through Hole
- Additional Feature :
- AVALANCHE RATED
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Avalanche Energy Rating (Eas) :
- 300 mJ
- Pulsed Drain Current-Max (IDM) :
- 40A
- Mounting Style :
- Through Hole
- Product Category :
- MOSFET
- Drain Current-Max (Abs) (ID) :
- 16 A
- Supplier Device Package :
- TO-247AD (IXFH)
- Transistor Application :
- SWITCHING
- Turn-Off Delay Time :
- 44 ns
- Number of Terminations :
- 3
- Package Type :
- TO-247
- Gate to Source Voltage (Vgs) :
- 30V
- Power Dissipation-Max :
- 330W Tc
- Transistor Element Material :
- SILICON
- Rds On Max :
- 360 mΩ
- Input Capacitance :
- 1.515 nF
- Package Shape :
- RECTANGULAR
- Pin Count :
- 3
- Channel Type :
- N
- Number of Elements :
- 1
- Terminal Form :
- THROUGH-HOLE
- Power Dissipation (Max) :
- 330W (Tc)
- Power Dissipation-Max (Abs) :
- 330 W
- Height :
- 21.46mm
- Drain to Source Resistance :
- 360 mΩ
- Brand :
- IXYS
- Surface Mount :
- No
- JEDEC-95 Code :
- TO-247AD
- Mount :
- Through Hole
- Base Product Number :
- IXFH16
- Drain to Source Voltage (Vdss) :
- 500V
- Vgs(th) (Max) @ Id :
- 5V @ 2.5mA
- RoHS Status :
- ROHS3 Compliant
- Length :
- 16.26mm
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Minimum Operating Temperature :
- -55 °C
- Number of Elements per Chip :
- 1
- Element Configuration :
- Single
- RoHS :
- Details
- Case Connection :
- DRAIN
- Vgs (Max) :
- ±30V
- Configuration :
- Single
- Drain-source On Resistance-Max :
- 0.36 Ω
- Width :
- 5.3mm
- Operating Mode :
- ENHANCEMENT MODE
- Operating Temperature :
- -55°C~150°C TJ
- Max Power Dissipation :
- 330 W
- Package / Case :
- TO-247-3
- Product Status :
- Active
- Max Operating Temperature :
- 150 °C
- Package :
- Tube
- Number of Channels :
- 1 Channel
- Number of Pins :
- 3
- DS Breakdown Voltage-Min :
- 500V
- Series :
- HiPerFET™, Polar3™
- Product Type :
- MOSFET
- Min Operating Temperature :
- -55 °C
- Datasheets
- IXFH16N50P3
IXFH16N50P3 Documents

N-Channel Tube 360m Ω @ 8A, 10V ±30V 1515pF @ 25V 29nC @ 10V 500V TO-247-3
IXFH16N50P3 Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 300 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 1515pF @ 25V.This device has a continuous drain current (ID) of [16A], which is its maximum continuous current.A device's drain current is its maximum continuous current, and this device's drain current is 16 A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 44 ns.A maximum pulsed drain current of 40A is the maximum peak drain current rated for this device.MOSFETs have 360 mΩ resistance between the drain and the source when biased into the on state by a gate-to-source voltage (VGS).During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 19 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 500V.In order to operate this transistor, a voltage of 500V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IXFH16N50P3 Features
the avalanche energy rating (Eas) is 300 mJ
a continuous drain current (ID) of 16A
the turn-off delay time is 44 ns
based on its rated peak drain current 40A.
single MOSFETs transistor is 360 mΩ
a 500V drain to source voltage (Vdss)
IXFH16N50P3 Applications
There are a lot of IXYS
IXFH16N50P3 applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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