IXFH16N50P3

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Mfr.Part #
IXFH16N50P3
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 500V 16A TO247AD
Stock
8,612
In Stock :
8,612

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Turn-On Delay Time :
19 ns
Manufacturer :
IXYS
Minimum Operating Temperature :
-55 °C
Pulsed Drain Current-Max (IDM) :
40A
Published :
2013
Drain to Source Voltage (Vdss) :
500V
FET Feature :
--
Drain-source On Resistance-Max :
0.36 Ω
RoHS Status :
ROHS3 Compliant
Current - Continuous Drain (Id) @ 25°C :
16A Tc
Power Dissipation (Max) :
330W (Tc)
Input Capacitance (Ciss) (Max) @ Vds :
1515pF @ 25V
Factory Lead Time :
20 Weeks
Terminal Form :
THROUGH-HOLE
Channel Mode :
Enhancement
Base Product Number :
IXFH16
Packaging :
Tube
Product Type :
MOSFET
Mounting Type :
Through Hole
Min Operating Temperature :
-55 °C
Reach Compliance Code :
Compliant
Package / Case :
TO-247-3
Brand :
IXYS
Number of Pins :
3
Number of Terminals :
3
Package Shape :
RECTANGULAR
Vgs(th) (Max) @ Id :
5V @ 2.5mA
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Maximum Operating Temperature :
+150 °C
Mount :
Through Hole
Gate Charge (Qg) (Max) @ Vgs :
29nC @ 10V
Transistor Type :
1 N-Channel
Vgs (Max) :
±30V
Width :
5.3mm
Tradename :
HiPerFET
Mounting Style :
Through Hole
Series :
HiPerFET™, Polar3™
Height :
21.46mm
Turn On Delay Time :
19 ns
Input Capacitance :
1.515 nF
Configuration :
Single
Drain Current-Max (Abs) (ID) :
16 A
Transistor Polarity :
N-Channel
JESD-30 Code :
R-PSFM-T3
Avalanche Energy Rating (Eas) :
300 mJ
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Terminations :
3
Channel Type :
N
Power Dissipation-Max (Abs) :
330 W
Additional Feature :
AVALANCHE RATED
Package :
Tube
Max Power Dissipation :
330 W
Product Category :
MOSFET
Continuous Drain Current (ID) :
16A
Drive Voltage (Max Rds On,Min Rds On) :
10V
Case Connection :
DRAIN
Power Dissipation-Max :
330W Tc
Gate to Source Voltage (Vgs) :
30V
Product Status :
Active
FET Type :
N-Channel
Drain to Source Resistance :
360 mΩ
RoHS :
Details
Element Configuration :
Single
JEDEC-95 Code :
TO-247AD
Number of Elements per Chip :
1
Polarity/Channel Type :
N-Channel
Transistor Element Material :
SILICON
Terminal Position :
Single
Max Operating Temperature :
150 °C
Operating Mode :
ENHANCEMENT MODE
Rds On Max :
360 mΩ
Number of Elements :
1
Turn-Off Delay Time :
44 ns
Surface Mount :
No
Package Type :
TO-247
Supplier Device Package :
TO-247AD (IXFH)
Pin Count :
3
Transistor Application :
SWITCHING
DS Breakdown Voltage-Min :
500V
Number of Channels :
1 Channel
Operating Temperature :
-55°C~150°C TJ
Rds On (Max) @ Id, Vgs :
360m Ω @ 8A, 10V
Length :
16.26mm
Datasheets
IXFH16N50P3
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFH16N50P3 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Package / Case:TO-247-3, Number of Pins:3, Number of Terminations:3, Number of Channels:1 Channel, Operating Temperature:-55°C~150°C TJ, IXFH16N50P3 pinout, IXFH16N50P3 datasheet PDF, IXFH16N50P3 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFH16N50P3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFH16N50P3


N-Channel Tube 360m Ω @ 8A, 10V ±30V 1515pF @ 25V 29nC @ 10V 500V TO-247-3

IXFH16N50P3 Overview


There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 300 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 1515pF @ 25V.This device has a continuous drain current (ID) of [16A], which is its maximum continuous current.A device's drain current is its maximum continuous current, and this device's drain current is 16 A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 44 ns.A maximum pulsed drain current of 40A is the maximum peak drain current rated for this device.MOSFETs have 360 mΩ resistance between the drain and the source when biased into the on state by a gate-to-source voltage (VGS).During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 19 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 500V.In order to operate this transistor, a voltage of 500V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

IXFH16N50P3 Features


the avalanche energy rating (Eas) is 300 mJ
a continuous drain current (ID) of 16A
the turn-off delay time is 44 ns
based on its rated peak drain current 40A.
single MOSFETs transistor is 360 mΩ
a 500V drain to source voltage (Vdss)


IXFH16N50P3 Applications


There are a lot of IXYS
IXFH16N50P3 applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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