IXFH16N50P
- Mfr.Part #
- IXFH16N50P
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 16A TO247AD
- Stock
- 24,284
- In Stock :
- 24,284
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Temperature :
- -55°C~150°C TJ
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Transistor Type :
- 1 N-Channel
- Rds On (Max) @ Id, Vgs :
- 400m Ω @ 8A, 10V
- Product Type :
- MOSFET
- Fall Time (Typ) :
- 22 ns
- Terminal Form :
- THROUGH-HOLE
- Gate to Source Voltage (Vgs) :
- 30V
- Power Dissipation-Max :
- 300W Tc
- Drain to Source Voltage (Vdss) :
- 500V
- DS Breakdown Voltage-Min :
- 500 V
- Power Dissipation-Max (Abs) :
- 300 W
- Package / Case :
- TO-247-3
- Vgs(th) (Max) @ Id :
- 5.5V @ 2.5mA
- Base Product Number :
- IXFH16
- RoHS :
- Details
- Number of Elements per Chip :
- 1
- Minimum Operating Temperature :
- -55 °C
- RoHS Status :
- ROHS3 Compliant
- Product Status :
- Active
- Current - Continuous Drain (Id) @ 25°C :
- 16A Tc
- Additional Feature :
- AVALANCHE RATED
- Reach Compliance Code :
- Compliant
- Packaging :
- Tube
- Drain-source On Resistance-Max :
- 0.4Ohm
- Published :
- 2006
- Channel Mode :
- Enhancement
- Configuration :
- Single
- Voltage - Rated DC :
- 500V
- JEDEC-95 Code :
- TO-247
- Series :
- HiPerFET™, PolarHT™
- Turn-Off Delay Time :
- 70 ns
- Manufacturer :
- IXYS
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Element Material :
- SILICON
- Package Type :
- TO-247
- Length :
- 16.26mm
- Turn On Delay Time :
- 23 ns
- Pbfree Code :
- yes
- Transistor Polarity :
- N-Channel
- Pulsed Drain Current-Max (IDM) :
- 35 A
- Mounting Style :
- Through Hole
- Drain Current-Max (Abs) (ID) :
- 16 A
- Power Dissipation :
- 300W
- Rise Time :
- 25ns
- Number of Channels :
- 1 Channel
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Product Category :
- MOSFET
- Terminal Position :
- Single
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Vgs (Max) :
- ±30V
- Gate Charge (Qg) (Max) @ Vgs :
- 43nC @ 10V
- FET Type :
- N-Channel
- Mounting Type :
- Through Hole
- Number of Terminals :
- 3
- Factory Lead Time :
- 30 Weeks
- FET Feature :
- --
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Package Shape :
- RECTANGULAR
- Element Configuration :
- Single
- Radiation Hardening :
- No
- Brand :
- IXYS
- Current Rating :
- 16A
- Qualification Status :
- Not Qualified
- Maximum Operating Temperature :
- +150 °C
- Transistor Application :
- SWITCHING
- Power Dissipation (Max) :
- 300W (Tc)
- Tradename :
- HiPerFET
- Width :
- 5.3mm
- Package :
- Tube
- Case Connection :
- DRAIN
- Height :
- 21.46mm
- Number of Elements :
- 1
- Lead Free :
- Lead Free
- Surface Mount :
- No
- Avalanche Energy Rating (Eas) :
- 750 mJ
- Supplier Device Package :
- TO-247AD (IXFH)
- Pin Count :
- 3
- Mount :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Input Capacitance (Ciss) (Max) @ Vds :
- 2250pF @ 25V
- Drain to Source Breakdown Voltage :
- 500V
- Polarity/Channel Type :
- N-Channel
- Continuous Drain Current (ID) :
- 16A
- JESD-609 Code :
- e1
- Number of Terminations :
- 3
- Number of Pins :
- 3
- Channel Type :
- N
- JESD-30 Code :
- R-PSFM-T3
- Datasheets
- IXFH16N50P

N-Channel Tube 400m Ω @ 8A, 10V ±30V 2250pF @ 25V 43nC @ 10V 500V TO-247-3
IXFH16N50P Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 750 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 2250pF @ 25V.This device has a continuous drain current (ID) of [16A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=500V, the drain-source breakdown voltage is 500V.A device's drain current is its maximum continuous current, and this device's drain current is 16 A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 70 ns.A maximum pulsed drain current of 35 A is the maximum peak drain current rated for this device.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 23 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 500 V.In order to operate this transistor, a voltage of 500V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IXFH16N50P Features
the avalanche energy rating (Eas) is 750 mJ
a continuous drain current (ID) of 16A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 70 ns
based on its rated peak drain current 35 A.
a 500V drain to source voltage (Vdss)
IXFH16N50P Applications
There are a lot of IXYS
IXFH16N50P applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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