IXFH16N50P

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Mfr.Part #
IXFH16N50P
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 500V 16A TO247AD
Stock
24,284
In Stock :
24,284

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Operating Temperature :
-55°C~150°C TJ
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Transistor Type :
1 N-Channel
Rds On (Max) @ Id, Vgs :
400m Ω @ 8A, 10V
Product Type :
MOSFET
Fall Time (Typ) :
22 ns
Terminal Form :
THROUGH-HOLE
Gate to Source Voltage (Vgs) :
30V
Power Dissipation-Max :
300W Tc
Drain to Source Voltage (Vdss) :
500V
DS Breakdown Voltage-Min :
500 V
Power Dissipation-Max (Abs) :
300 W
Package / Case :
TO-247-3
Vgs(th) (Max) @ Id :
5.5V @ 2.5mA
Base Product Number :
IXFH16
RoHS :
Details
Number of Elements per Chip :
1
Minimum Operating Temperature :
-55 °C
RoHS Status :
ROHS3 Compliant
Product Status :
Active
Current - Continuous Drain (Id) @ 25°C :
16A Tc
Additional Feature :
AVALANCHE RATED
Reach Compliance Code :
Compliant
Packaging :
Tube
Drain-source On Resistance-Max :
0.4Ohm
Published :
2006
Channel Mode :
Enhancement
Configuration :
Single
Voltage - Rated DC :
500V
JEDEC-95 Code :
TO-247
Series :
HiPerFET™, PolarHT™
Turn-Off Delay Time :
70 ns
Manufacturer :
IXYS
Operating Mode :
ENHANCEMENT MODE
Transistor Element Material :
SILICON
Package Type :
TO-247
Length :
16.26mm
Turn On Delay Time :
23 ns
Pbfree Code :
yes
Transistor Polarity :
N-Channel
Pulsed Drain Current-Max (IDM) :
35 A
Mounting Style :
Through Hole
Drain Current-Max (Abs) (ID) :
16 A
Power Dissipation :
300W
Rise Time :
25ns
Number of Channels :
1 Channel
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Product Category :
MOSFET
Terminal Position :
Single
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Vgs (Max) :
±30V
Gate Charge (Qg) (Max) @ Vgs :
43nC @ 10V
FET Type :
N-Channel
Mounting Type :
Through Hole
Number of Terminals :
3
Factory Lead Time :
30 Weeks
FET Feature :
--
Drive Voltage (Max Rds On,Min Rds On) :
10V
Package Shape :
RECTANGULAR
Element Configuration :
Single
Radiation Hardening :
No
Brand :
IXYS
Current Rating :
16A
Qualification Status :
Not Qualified
Maximum Operating Temperature :
+150 °C
Transistor Application :
SWITCHING
Power Dissipation (Max) :
300W (Tc)
Tradename :
HiPerFET
Width :
5.3mm
Package :
Tube
Case Connection :
DRAIN
Height :
21.46mm
Number of Elements :
1
Lead Free :
Lead Free
Surface Mount :
No
Avalanche Energy Rating (Eas) :
750 mJ
Supplier Device Package :
TO-247AD (IXFH)
Pin Count :
3
Mount :
Through Hole
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds :
2250pF @ 25V
Drain to Source Breakdown Voltage :
500V
Polarity/Channel Type :
N-Channel
Continuous Drain Current (ID) :
16A
JESD-609 Code :
e1
Number of Terminations :
3
Number of Pins :
3
Channel Type :
N
JESD-30 Code :
R-PSFM-T3
Datasheets
IXFH16N50P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFH16N50P from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Package / Case:TO-247-3, Number of Channels:1 Channel, Mounting Type:Through Hole, Number of Terminations:3, Number of Pins:3, IXFH16N50P pinout, IXFH16N50P datasheet PDF, IXFH16N50P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFH16N50P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFH16N50P


N-Channel Tube 400m Ω @ 8A, 10V ±30V 2250pF @ 25V 43nC @ 10V 500V TO-247-3

IXFH16N50P Overview


There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 750 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 2250pF @ 25V.This device has a continuous drain current (ID) of [16A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=500V, the drain-source breakdown voltage is 500V.A device's drain current is its maximum continuous current, and this device's drain current is 16 A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 70 ns.A maximum pulsed drain current of 35 A is the maximum peak drain current rated for this device.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 23 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 500 V.In order to operate this transistor, a voltage of 500V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

IXFH16N50P Features


the avalanche energy rating (Eas) is 750 mJ
a continuous drain current (ID) of 16A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 70 ns
based on its rated peak drain current 35 A.
a 500V drain to source voltage (Vdss)


IXFH16N50P Applications


There are a lot of IXYS
IXFH16N50P applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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