IXFH16N50P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Brand :

IXYS

Base Product Number :

IXFH16

Surface Mount :

No

Turn On Delay Time :

23 ns

Power Dissipation :

300W

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

3

Package Shape :

RECTANGULAR

Number of Elements :

1

Vgs (Max) :

±30V

Length :

16.26mm

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Qualification Status :

Not Qualified

JEDEC-95 Code :

TO-247

Lead Free :

Lead Free

Number of Elements per Chip :

1

RoHS Status :

ROHS3 Compliant

Configuration :

Single

Fall Time (Typ) :

22 ns

Pbfree Code :

yes

Package :

Tube

Product Category :

MOSFET

Channel Type :

N

Pulsed Drain Current-Max (IDM) :

35 A

Transistor Type :

1 N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Form :

THROUGH-HOLE

RoHS :

Details

Number of Terminals :

3

Operating Temperature :

-55°C~150°C TJ

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

400m Ω @ 8A, 10V

Polarity/Channel Type :

N-Channel

DS Breakdown Voltage-Min :

500 V

Drain to Source Voltage (Vdss) :

500V

Mount :

Through Hole

Package Type :

TO-247

Manufacturer :

IXYS

Reach Compliance Code :

Compliant

JESD-30 Code :

R-PSFM-T3

Tradename :

HiPerFET

Avalanche Energy Rating (Eas) :

750 mJ

Pin Count :

3

Terminal Position :

Single

Power Dissipation-Max (Abs) :

300 W

Product Type :

MOSFET

Channel Mode :

Enhancement

Gate Charge (Qg) (Max) @ Vgs :

43nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-247-3

Maximum Operating Temperature :

+150 °C

Case Connection :

DRAIN

Power Dissipation-Max :

300W Tc

Turn-Off Delay Time :

70 ns

Number of Pins :

3

Input Capacitance (Ciss) (Max) @ Vds :

2250pF @ 25V

Drain-source On Resistance-Max :

0.4Ohm

Rise Time :

25ns

Factory Lead Time :

30 Weeks

Published :

2006

Product Status :

Active

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Additional Feature :

AVALANCHE RATED

Power Dissipation (Max) :

300W (Tc)

Mounting Type :

Through Hole

Minimum Operating Temperature :

-55 °C

FET Feature :

--

Vgs(th) (Max) @ Id :

5.5V @ 2.5mA

Voltage - Rated DC :

500V

Number of Channels :

1 Channel

Transistor Polarity :

N-Channel

Element Configuration :

Single

Drain Current-Max (Abs) (ID) :

16 A

Series :

HiPerFET™, PolarHT™

Current - Continuous Drain (Id) @ 25°C :

16A Tc

Width :

5.3mm

FET Type :

N-Channel

Current Rating :

16A

Radiation Hardening :

No

Transistor Element Material :

SILICON

Packaging :

Tube

Transistor Application :

SWITCHING

Height :

21.46mm

Supplier Device Package :

TO-247AD (IXFH)

Mounting Style :

Through Hole

Continuous Drain Current (ID) :

16A

Drain to Source Breakdown Voltage :

500V

Gate to Source Voltage (Vgs) :

30V

JESD-609 Code :

e1