IXFH16N120P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Length :

16.26 mm

Drain Current-Max (Abs) (ID) :

16 A

Base Product Number :

IXFH16

Published :

2012

Number of Terminals :

3

Rds On (Max) @ Id, Vgs :

950m Ω @ 8A, 10V

Number of Channels :

1 Channel

DS Breakdown Voltage-Min :

1200 V

RoHS :

Details

Number of Elements :

1

Qualification Status :

Not Qualified

Supplier Device Package :

TO-247AD (IXFH)

Surface Mount :

No

Vgs(th) (Max) @ Id :

6.5V @ 1mA

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Packaging :

Tube

Pin Count :

3

Mount :

Through Hole

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package :

Tube

Brand :

IXYS

Transistor Polarity :

N-Channel

Width :

5.3 mm

FET Feature :

--

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Tradename :

HiPerFET

Pulsed Drain Current-Max (IDM) :

35A

Product Type :

MOSFET

FET Type :

N-Channel

Drain to Source Voltage (Vdss) :

1200V

Number of Terminations :

3

Fall Time (Typ) :

35 ns

Gate Charge (Qg) (Max) @ Vgs :

120nC @ 10V

Maximum Operating Temperature :

+ 150 C

Additional Feature :

AVALANCHE RATED

Rise Time :

28ns

Manufacturer :

IXYS

Package / Case :

TO-247-3

Case Connection :

DRAIN

JESD-609 Code :

e1

Element Configuration :

Single

Terminal Form :

THROUGH-HOLE

Product Status :

Active

Lead Free :

Lead Free

Configuration :

Single

Drain-source On Resistance-Max :

0.95Ohm

Mounting Type :

Through Hole

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max (Abs) :

660 W

Operating Temperature :

-55°C~150°C TJ

Terminal Position :

Single

Transistor Type :

1 N-Channel

Avalanche Energy Rating (Eas) :

800 mJ

Height :

21.46 mm

JEDEC-95 Code :

TO-247AD

Mounting Style :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation (Max) :

660W (Tc)

Reach Compliance Code :

Compliant

Drain to Source Breakdown Voltage :

1.2kV

Pbfree Code :

yes

Factory Lead Time :

30 Weeks

Minimum Operating Temperature :

- 55 C

Polarity/Channel Type :

N-Channel

Channel Mode :

Enhancement

JESD-30 Code :

R-PSFM-T3

Power Dissipation :

660W

Current - Continuous Drain (Id) @ 25°C :

16A Tc

Turn-Off Delay Time :

66 ns

Radiation Hardening :

No

Transistor Application :

SWITCHING

Power Dissipation-Max :

660W Tc

Continuous Drain Current (ID) :

16A

Gate to Source Voltage (Vgs) :

30V

Series :

HiPerFET™, PolarP2™

Input Capacitance (Ciss) (Max) @ Vds :

6900pF @ 25V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Transistor Element Material :

SILICON

Product Category :

MOSFET

Package Shape :

RECTANGULAR