IXFH160N15T2

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Mfr.Part #
IXFH160N15T2
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 150V 160A TO247AD
Stock
35,455
In Stock :
35,455

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Factory Lead Time :
30 Weeks
Length :
16.26 mm
Power Dissipation-Max (Abs) :
880 W
Polarity/Channel Type :
N-Channel
Case Connection :
DRAIN
Type :
TrenchT2 HiperFET Power MOSFET
JEDEC-95 Code :
TO-247
Product Type :
MOSFET
Product Category :
MOSFET
Base Product Number :
IXFH160
Drain Current-Max (Abs) (ID) :
160 A
Configuration :
SINGLE WITH BUILT-IN DIODE
Additional Feature :
AVALANCHE RATED
Tradename :
HiPerFET
Operating Temperature :
-55°C~175°C TJ
Drain-source On Resistance-Max :
0.009Ohm
FET Technology :
METAL-OXIDE SEMICONDUCTOR
JESD-609 Code :
e1
Pbfree Code :
yes
JESD-30 Code :
R-PSFM-T3
Vgs (Max) :
±20V
Qualification Status :
Not Qualified
Series :
GigaMOS™, HiPerFET™, TrenchT2™
Transistor Type :
1 N-Channel
Number of Channels :
1 Channel
Height :
21.46 mm
Gate Charge (Qg) (Max) @ Vgs :
253nC @ 10V
FET Feature :
--
Maximum Operating Temperature :
+ 175 C
Packaging :
Tube
Mounting Type :
Through Hole
Vgs(th) (Max) @ Id :
4.5V @ 1mA
Transistor Application :
SWITCHING
Manufacturer :
IXYS
Continuous Drain Current (ID) :
160A
Minimum Operating Temperature :
- 55 C
Pulsed Drain Current-Max (IDM) :
440A
Avalanche Energy Rating (Eas) :
1500 mJ
Rds On (Max) @ Id, Vgs :
9m Ω @ 80A, 10V
Input Capacitance (Ciss) (Max) @ Vds :
15000pF @ 25V
Current - Continuous Drain (Id) @ 25°C :
160A Tc
Product Status :
Active
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Power Dissipation-Max :
880W Tc
Package / Case :
TO-247-3
Published :
2010
Rise Time :
15 ns
DS Breakdown Voltage-Min :
150V
RoHS :
Details
ECCN Code :
EAR99
Number of Terminals :
3
Mount :
Through Hole
FET Type :
N-Channel
Surface Mount :
No
Lead Free :
Lead Free
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Terminal Position :
Single
Drive Voltage (Max Rds On,Min Rds On) :
10V
Package :
Tube
Width :
5.3 mm
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Channel Mode :
Enhancement
Transistor Element Material :
SILICON
Terminal Finish :
TIN SILVER COPPER
Number of Terminations :
3
Drain to Source Voltage (Vdss) :
150V
Mounting Style :
Through Hole
Pin Count :
3
Reach Compliance Code :
Unknown
RoHS Status :
ROHS3 Compliant
Terminal Form :
THROUGH-HOLE
Supplier Device Package :
TO-247AD (IXFH)
Operating Mode :
ENHANCEMENT MODE
Brand :
IXYS
Package Shape :
RECTANGULAR
Power Dissipation (Max) :
880W (Tc)
Transistor Polarity :
N-Channel
Number of Elements :
1
Datasheets
IXFH160N15T2
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFH160N15T2 from Chip IC,where excellence meets affordability. This product stands out with its Type:TrenchT2 HiperFET Power MOSFET, Operating Temperature:-55°C~175°C TJ, Number of Channels:1 Channel, Mounting Type:Through Hole, Package / Case:TO-247-3, Number of Terminations:3, IXFH160N15T2 pinout, IXFH160N15T2 datasheet PDF, IXFH160N15T2 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFH160N15T2 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFH160N15T2


N-Channel Tube 9m Ω @ 80A, 10V ±20V 15000pF @ 25V 253nC @ 10V 150V TO-247-3

IXFH160N15T2 Overview


When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 1500 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 15000pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 160A. The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 160 A.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 440A.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 150V in order to maintain normal operation.Operating this transistor requires a 150V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

IXFH160N15T2 Features


the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 160A
based on its rated peak drain current 440A.
a 150V drain to source voltage (Vdss)


IXFH160N15T2 Applications


There are a lot of IXYS
IXFH160N15T2 applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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