IXFH160N15T2
- Mfr.Part #
- IXFH160N15T2
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 150V 160A TO247AD
- Stock
- 35,455
- In Stock :
- 35,455
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Factory Lead Time :
- 30 Weeks
- Length :
- 16.26 mm
- Power Dissipation-Max (Abs) :
- 880 W
- Polarity/Channel Type :
- N-Channel
- Case Connection :
- DRAIN
- Type :
- TrenchT2 HiperFET Power MOSFET
- JEDEC-95 Code :
- TO-247
- Product Type :
- MOSFET
- Product Category :
- MOSFET
- Base Product Number :
- IXFH160
- Drain Current-Max (Abs) (ID) :
- 160 A
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Additional Feature :
- AVALANCHE RATED
- Tradename :
- HiPerFET
- Operating Temperature :
- -55°C~175°C TJ
- Drain-source On Resistance-Max :
- 0.009Ohm
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- JESD-609 Code :
- e1
- Pbfree Code :
- yes
- JESD-30 Code :
- R-PSFM-T3
- Vgs (Max) :
- ±20V
- Qualification Status :
- Not Qualified
- Series :
- GigaMOS™, HiPerFET™, TrenchT2™
- Transistor Type :
- 1 N-Channel
- Number of Channels :
- 1 Channel
- Height :
- 21.46 mm
- Gate Charge (Qg) (Max) @ Vgs :
- 253nC @ 10V
- FET Feature :
- --
- Maximum Operating Temperature :
- + 175 C
- Packaging :
- Tube
- Mounting Type :
- Through Hole
- Vgs(th) (Max) @ Id :
- 4.5V @ 1mA
- Transistor Application :
- SWITCHING
- Manufacturer :
- IXYS
- Continuous Drain Current (ID) :
- 160A
- Minimum Operating Temperature :
- - 55 C
- Pulsed Drain Current-Max (IDM) :
- 440A
- Avalanche Energy Rating (Eas) :
- 1500 mJ
- Rds On (Max) @ Id, Vgs :
- 9m Ω @ 80A, 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 15000pF @ 25V
- Current - Continuous Drain (Id) @ 25°C :
- 160A Tc
- Product Status :
- Active
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Power Dissipation-Max :
- 880W Tc
- Package / Case :
- TO-247-3
- Published :
- 2010
- Rise Time :
- 15 ns
- DS Breakdown Voltage-Min :
- 150V
- RoHS :
- Details
- ECCN Code :
- EAR99
- Number of Terminals :
- 3
- Mount :
- Through Hole
- FET Type :
- N-Channel
- Surface Mount :
- No
- Lead Free :
- Lead Free
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Terminal Position :
- Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Package :
- Tube
- Width :
- 5.3 mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Channel Mode :
- Enhancement
- Transistor Element Material :
- SILICON
- Terminal Finish :
- TIN SILVER COPPER
- Number of Terminations :
- 3
- Drain to Source Voltage (Vdss) :
- 150V
- Mounting Style :
- Through Hole
- Pin Count :
- 3
- Reach Compliance Code :
- Unknown
- RoHS Status :
- ROHS3 Compliant
- Terminal Form :
- THROUGH-HOLE
- Supplier Device Package :
- TO-247AD (IXFH)
- Operating Mode :
- ENHANCEMENT MODE
- Brand :
- IXYS
- Package Shape :
- RECTANGULAR
- Power Dissipation (Max) :
- 880W (Tc)
- Transistor Polarity :
- N-Channel
- Number of Elements :
- 1
- Datasheets
- IXFH160N15T2

N-Channel Tube 9m Ω @ 80A, 10V ±20V 15000pF @ 25V 253nC @ 10V 150V TO-247-3
IXFH160N15T2 Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 1500 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 15000pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 160A. The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 160 A.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 440A.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 150V in order to maintain normal operation.Operating this transistor requires a 150V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IXFH160N15T2 Features
the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 160A
based on its rated peak drain current 440A.
a 150V drain to source voltage (Vdss)
IXFH160N15T2 Applications
There are a lot of IXYS
IXFH160N15T2 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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