IXFH160N15T

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Mfr.Part #
IXFH160N15T
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 150V 160A TO247AD
Stock
3,642
In Stock :
3,642

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Rds On (Max) @ Id, Vgs :
9m Ω @ 80A, 10V
Length :
16.26 mm
JESD-30 Code :
R-PSFM-T3
Height :
21.46 mm
Number of Channels :
1 Channel
Mounting Type :
Through Hole
Package Shape :
RECTANGULAR
Number of Terminals :
3
Product Category :
MOSFET
Input Capacitance (Ciss) (Max) @ Vds :
15000pF @ 25V
Current - Continuous Drain (Id) @ 25°C :
160A Tc
Drain-source On Resistance-Max :
0.009Ohm
Operating Temperature :
-55°C~175°C TJ
Channel Mode :
Enhancement
Rise Time :
15 ns
Pbfree Code :
yes
Brand :
IXYS
Configuration :
SINGLE WITH BUILT-IN DIODE
ECCN Code :
EAR99
Qualification Status :
Not Qualified
Transistor Type :
1 N-Channel
Drain to Source Voltage (Vdss) :
150V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Mount :
Through Hole
Number of Terminations :
3
Additional Feature :
AVALANCHE RATED
Continuous Drain Current (ID) :
160A
Width :
5.3 mm
Number of Elements :
1
Series :
GigaMOS™, HiPerFET™, TrenchT2™
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Terminal Position :
Single
Transistor Application :
SWITCHING
Product Status :
Active
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Power Dissipation-Max (Abs) :
880 W
Terminal Finish :
TIN SILVER COPPER
Surface Mount :
No
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Gate Charge (Qg) (Max) @ Vgs :
253nC @ 10V
Packaging :
Tube
FET Feature :
--
Package / Case :
TO-247-3
Tradename :
HiPerFET
Drain Current-Max (Abs) (ID) :
160 A
Minimum Operating Temperature :
- 55 C
Package :
Tube
Type :
TrenchT2 HiperFET Power MOSFET
Reach Compliance Code :
Unknown
Transistor Polarity :
N-Channel
RoHS :
Details
Pulsed Drain Current-Max (IDM) :
440A
Manufacturer :
IXYS
Transistor Element Material :
SILICON
DS Breakdown Voltage-Min :
150V
Vgs(th) (Max) @ Id :
4.5V @ 1mA
RoHS Status :
ROHS3 Compliant
FET Type :
N-Channel
Published :
2010
Pin Count :
3
Case Connection :
DRAIN
Polarity/Channel Type :
N-Channel
Mounting Style :
Through Hole
Power Dissipation-Max :
880W Tc
Terminal Form :
THROUGH-HOLE
Factory Lead Time :
30 Weeks
JESD-609 Code :
e1
Supplier Device Package :
TO-247AD (IXFH)
Avalanche Energy Rating (Eas) :
1500 mJ
Lead Free :
Lead Free
Operating Mode :
ENHANCEMENT MODE
Base Product Number :
IXFH160
Vgs (Max) :
±20V
JEDEC-95 Code :
TO-247
Product Type :
MOSFET
Drive Voltage (Max Rds On,Min Rds On) :
10V
Maximum Operating Temperature :
+ 175 C
Power Dissipation (Max) :
880W (Tc)
Datasheets
IXFH160N15T
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFH160N15T from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1 Channel, Mounting Type:Through Hole, Operating Temperature:-55°C~175°C TJ, Number of Terminations:3, Package / Case:TO-247-3, Type:TrenchT2 HiperFET Power MOSFET, IXFH160N15T pinout, IXFH160N15T datasheet PDF, IXFH160N15T amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFH160N15T ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFH160N15T


N-Channel Tube 9m Ω @ 80A, 10V ±20V 15000pF @ 25V 253nC @ 10V 150V TO-247-3

IXFH160N15T2 Overview


When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 1500 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 15000pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 160A. The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 160 A.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 440A.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 150V in order to maintain normal operation.Operating this transistor requires a 150V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

IXFH160N15T2 Features


the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 160A
based on its rated peak drain current 440A.
a 150V drain to source voltage (Vdss)


IXFH160N15T2 Applications


There are a lot of IXYS
IXFH160N15T2 applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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