IXFH160N15T
- Mfr.Part #
- IXFH160N15T
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 150V 160A TO247AD
- Stock
- 3,642
- In Stock :
- 3,642
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rds On (Max) @ Id, Vgs :
- 9m Ω @ 80A, 10V
- Length :
- 16.26 mm
- JESD-30 Code :
- R-PSFM-T3
- Height :
- 21.46 mm
- Number of Channels :
- 1 Channel
- Mounting Type :
- Through Hole
- Package Shape :
- RECTANGULAR
- Number of Terminals :
- 3
- Product Category :
- MOSFET
- Input Capacitance (Ciss) (Max) @ Vds :
- 15000pF @ 25V
- Current - Continuous Drain (Id) @ 25°C :
- 160A Tc
- Drain-source On Resistance-Max :
- 0.009Ohm
- Operating Temperature :
- -55°C~175°C TJ
- Channel Mode :
- Enhancement
- Rise Time :
- 15 ns
- Pbfree Code :
- yes
- Brand :
- IXYS
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- ECCN Code :
- EAR99
- Qualification Status :
- Not Qualified
- Transistor Type :
- 1 N-Channel
- Drain to Source Voltage (Vdss) :
- 150V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Mount :
- Through Hole
- Number of Terminations :
- 3
- Additional Feature :
- AVALANCHE RATED
- Continuous Drain Current (ID) :
- 160A
- Width :
- 5.3 mm
- Number of Elements :
- 1
- Series :
- GigaMOS™, HiPerFET™, TrenchT2™
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Terminal Position :
- Single
- Transistor Application :
- SWITCHING
- Product Status :
- Active
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation-Max (Abs) :
- 880 W
- Terminal Finish :
- TIN SILVER COPPER
- Surface Mount :
- No
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Gate Charge (Qg) (Max) @ Vgs :
- 253nC @ 10V
- Packaging :
- Tube
- FET Feature :
- --
- Package / Case :
- TO-247-3
- Tradename :
- HiPerFET
- Drain Current-Max (Abs) (ID) :
- 160 A
- Minimum Operating Temperature :
- - 55 C
- Package :
- Tube
- Type :
- TrenchT2 HiperFET Power MOSFET
- Reach Compliance Code :
- Unknown
- Transistor Polarity :
- N-Channel
- RoHS :
- Details
- Pulsed Drain Current-Max (IDM) :
- 440A
- Manufacturer :
- IXYS
- Transistor Element Material :
- SILICON
- DS Breakdown Voltage-Min :
- 150V
- Vgs(th) (Max) @ Id :
- 4.5V @ 1mA
- RoHS Status :
- ROHS3 Compliant
- FET Type :
- N-Channel
- Published :
- 2010
- Pin Count :
- 3
- Case Connection :
- DRAIN
- Polarity/Channel Type :
- N-Channel
- Mounting Style :
- Through Hole
- Power Dissipation-Max :
- 880W Tc
- Terminal Form :
- THROUGH-HOLE
- Factory Lead Time :
- 30 Weeks
- JESD-609 Code :
- e1
- Supplier Device Package :
- TO-247AD (IXFH)
- Avalanche Energy Rating (Eas) :
- 1500 mJ
- Lead Free :
- Lead Free
- Operating Mode :
- ENHANCEMENT MODE
- Base Product Number :
- IXFH160
- Vgs (Max) :
- ±20V
- JEDEC-95 Code :
- TO-247
- Product Type :
- MOSFET
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Maximum Operating Temperature :
- + 175 C
- Power Dissipation (Max) :
- 880W (Tc)
- Datasheets
- IXFH160N15T

N-Channel Tube 9m Ω @ 80A, 10V ±20V 15000pF @ 25V 253nC @ 10V 150V TO-247-3
IXFH160N15T2 Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 1500 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 15000pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 160A. The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 160 A.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 440A.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 150V in order to maintain normal operation.Operating this transistor requires a 150V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IXFH160N15T2 Features
the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 160A
based on its rated peak drain current 440A.
a 150V drain to source voltage (Vdss)
IXFH160N15T2 Applications
There are a lot of IXYS
IXFH160N15T2 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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