IXFH15N80Q

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Pbfree Code :

yes

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

15A Tc

Drain-source On Resistance-Max :

0.6 Ω

Surface Mount :

No

Product Category :

MOSFET

Factory Lead Time :

8 Weeks

Continuous Drain Current (ID) :

15A

Rds On (Max) @ Id, Vgs :

600m Ω @ 7.5A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

4300pF @ 25V

Current Rating :

15A

Number of Elements :

1

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Number of Terminations :

3

Drain Current-Max (Abs) (ID) :

15 A

Transistor Polarity :

N-Channel

Vgs(th) (Max) @ Id :

4.5V @ 4mA

Fall Time (Typ) :

16 ns

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Published :

2000

Terminal Form :

THROUGH-HOLE

Package :

Tube

Drain to Source Breakdown Voltage :

800V

Terminal Position :

Single

Drain to Source Voltage (Vdss) :

800V

Lead Free :

Lead Free

RoHS :

Details

Number of Channels :

1 Channel

Pulsed Drain Current-Max (IDM) :

60A

DS Breakdown Voltage-Min :

800 V

Resistance :

600mOhm

FET Feature :

--

Case Connection :

DRAIN

Qualification Status :

Not Qualified

Power Dissipation-Max :

300W Tc

Recovery Time :

250 ns

Supplier Device Package :

TO-247AD (IXFH)

Pin Count :

3

Mounting Type :

Through Hole

Moisture Sensitivity Level (MSL) :

Not Applicable

JESD-609 Code :

e1

JEDEC-95 Code :

TO-247

Power Dissipation (Max) :

300W (Tc)

Vgs (Max) :

±20V

Mounting Style :

Through Hole

Number of Terminals :

3

JESD-30 Code :

R-PSFM-T3

Height :

21.46 mm

Power Dissipation :

300W

Base Product Number :

IXFH15

Operating Temperature :

-55°C~150°C TJ

Length :

16.26 mm

Additional Feature :

AVALANCHE RATED

Mount :

Through Hole

Reach Compliance Code :

Compliant

Gate Charge (Qg) (Max) @ Vgs :

90nC @ 10V

Product Status :

Not For New Designs

Channel Mode :

Enhancement

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Configuration :

Single

Series :

HiPerFET™

ECCN Code :

EAR99

Voltage - Rated DC :

800V

Manufacturer :

IXYS

Tradename :

HiPerFET

Power Dissipation-Max (Abs) :

300 W

Package Shape :

RECTANGULAR

Turn-Off Delay Time :

53 ns

Gate to Source Voltage (Vgs) :

20V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Type :

1 N-Channel

Packaging :

Tube

Product Type :

MOSFET

Rise Time :

27ns

Minimum Operating Temperature :

- 55 C

FET Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Width :

5.3 mm

Polarity/Channel Type :

N-Channel

Maximum Operating Temperature :

+ 150 C

Brand :

IXYS

Element Configuration :

Single

Avalanche Energy Rating (Eas) :

1000 mJ

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Package / Case :

TO-247-3

Number of Pins :

3