IXFH15N80

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Manufacturer :

IXYS

JESD-30 Code :

R-PSFM-T3

Drain to Source Breakdown Voltage :

800V

RoHS :

Details

Packaging :

Tube

Power Dissipation Ambient-Max :

300 W

Tradename :

HyperFET

FET Feature :

--

Operating Mode :

ENHANCEMENT MODE

Number of Pins :

3

Weight :

6g

REACH SVHC :

No SVHC

RoHS Status :

ROHS3 Compliant

JEDEC-95 Code :

TO-247AD

Brand :

IXYS

Turn-Off Delay Time :

63 ns

Lead Free :

Lead Free

Continuous Drain Current (ID) :

15A

Qualification Status :

Not Qualified

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

3

Case Connection :

DRAIN

Transistor Application :

SWITCHING

Number of Channels :

1 Channel

Drain-source On Resistance-Max :

0.6 Ω

Supplier Device Package :

TO-247AD (IXFH)

Current - Continuous Drain (Id) @ 25°C :

15A Tc

DS Breakdown Voltage-Min :

800 V

Base Product Number :

IXFH15

Mount :

Through Hole

Drain Current-Max (Abs) (ID) :

15 A

Product Status :

Active

Configuration :

Single

Maximum Operating Temperature :

+ 150 C

Package / Case :

TO-247-3

Current Rating :

15A

Radiation Hardening :

No

ECCN Code :

EAR99

Height :

21.46 mm

Channel Mode :

Enhancement

Transistor Type :

1 N-Channel

Mounting Style :

Through Hole

Dual Supply Voltage :

800V

Series :

HiPerFET™

Fall Time (Typ) :

32 ns

Package Shape :

RECTANGULAR

Polarity/Channel Type :

N-Channel

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Pbfree Code :

yes

FET Type :

N-Channel

Product Category :

MOSFET

Transistor Element Material :

SILICON

Rise Time :

33ns

Additional Feature :

AVALANCHE RATED

Transistor Polarity :

N-Channel

Reach Compliance Code :

Compliant

Nominal Vgs :

4.5 V

Vgs (Max) :

±20V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Resistance :

600mOhm

Vgs(th) (Max) @ Id :

4.5V @ 4mA

Termination :

Through Hole

Drain to Source Voltage (Vdss) :

800V

Width :

5.3 mm

Element Configuration :

Single

Power Dissipation (Max) :

300W (Tc)

Number of Terminals :

3

Number of Elements :

1

Surface Mount :

No

Power Dissipation-Max (Abs) :

300 W

Power Dissipation :

300W

Power Dissipation-Max :

300W Tc

Length :

16.26 mm

Package :

Tube

Reverse Recovery Time :

250 ns

Terminal Form :

THROUGH-HOLE

Product Type :

MOSFET

Gate to Source Voltage (Vgs) :

20V

Mounting Type :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

4870pF @ 25V

Pulsed Drain Current-Max (IDM) :

60A

Threshold Voltage :

4.5V

Gate Charge (Qg) (Max) @ Vgs :

200nC @ 10V

Published :

2003

Minimum Operating Temperature :

- 55 C

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

600m Ω @ 7.5A, 10V

Voltage - Rated DC :

800V

Pin Count :

3

Terminal Position :

Single