IXFH15N80

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Fall Time (Typ) :

32 ns

Continuous Drain Current (ID) :

15A

Channel Mode :

Enhancement

Power Dissipation-Max :

300W Tc

JEDEC-95 Code :

TO-247AD

Turn-Off Delay Time :

63 ns

Configuration :

Single

Number of Pins :

3

Qualification Status :

Not Qualified

Current - Continuous Drain (Id) @ 25°C :

15A Tc

Width :

5.3 mm

Threshold Voltage :

4.5V

Drain Current-Max (Abs) (ID) :

15 A

Length :

16.26 mm

Voltage - Rated DC :

800V

Resistance :

600mOhm

Case Connection :

DRAIN

Transistor Polarity :

N-Channel

Package / Case :

TO-247-3

Surface Mount :

No

Mounting Type :

Through Hole

Element Configuration :

Single

Gate Charge (Qg) (Max) @ Vgs :

200nC @ 10V

Pin Count :

3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

600m Ω @ 7.5A, 10V

Maximum Operating Temperature :

+ 150 C

REACH SVHC :

No SVHC

Pulsed Drain Current-Max (IDM) :

60A

ECCN Code :

EAR99

Published :

2003

Weight :

6g

Package :

Tube

Vgs (Max) :

±20V

JESD-30 Code :

R-PSFM-T3

Power Dissipation Ambient-Max :

300 W

Brand :

IXYS

Vgs(th) (Max) @ Id :

4.5V @ 4mA

Package Shape :

RECTANGULAR

Supplier Device Package :

TO-247AD (IXFH)

Mount :

Through Hole

Number of Channels :

1 Channel

Tradename :

HyperFET

Reach Compliance Code :

Compliant

Drain to Source Breakdown Voltage :

800V

DS Breakdown Voltage-Min :

800 V

FET Type :

N-Channel

Reverse Recovery Time :

250 ns

Product Status :

Active

Number of Terminals :

3

Lead Free :

Lead Free

Transistor Type :

1 N-Channel

Product Type :

MOSFET

Current Rating :

15A

Packaging :

Tube

Radiation Hardening :

No

Transistor Application :

SWITCHING

Power Dissipation-Max (Abs) :

300 W

Input Capacitance (Ciss) (Max) @ Vds :

4870pF @ 25V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Manufacturer :

IXYS

Gate to Source Voltage (Vgs) :

20V

Nominal Vgs :

4.5 V

Polarity/Channel Type :

N-Channel

Additional Feature :

AVALANCHE RATED

Transistor Element Material :

SILICON

Series :

HiPerFET™

Base Product Number :

IXFH15

Terminal Form :

THROUGH-HOLE

Mounting Style :

Through Hole

Drain-source On Resistance-Max :

0.6 Ω

Product Category :

MOSFET

Pbfree Code :

yes

Termination :

Through Hole

Operating Mode :

ENHANCEMENT MODE

Dual Supply Voltage :

800V

Operating Temperature :

-55°C~150°C TJ

Power Dissipation :

300W

Number of Elements :

1

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Height :

21.46 mm

Minimum Operating Temperature :

- 55 C

Power Dissipation (Max) :

300W (Tc)

RoHS :

Details

Rise Time :

33ns

Terminal Position :

Single

FET Feature :

--

Drain to Source Voltage (Vdss) :

800V

Number of Terminations :

3