IXFH15N60
- Mfr.Part #
- IXFH15N60
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 15A TO-247AD
- Stock
- 377
- In Stock :
- 377
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Channel Mode :
- Enhancement
- Height :
- 21.46 mm
- Transistor Element Material :
- SILICON
- Operating Temperature :
- -55°C~150°C TJ
- Current Rating :
- 15A
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Drain to Source Breakdown Voltage :
- 600V
- Minimum Operating Temperature :
- - 55 C
- FET Type :
- N-Channel
- Maximum Operating Temperature :
- + 150 C
- Continuous Drain Current (ID) :
- 15A
- Surface Mount :
- No
- Number of Terminals :
- 3
- Mounting Type :
- Through Hole
- Current - Continuous Drain (Id) @ 25°C :
- 15A Tc
- Polarity/Channel Type :
- N-Channel
- Rise Time :
- 43ns
- Packaging :
- Tube
- Configuration :
- Single
- Reach Compliance Code :
- Compliant
- Vgs (Max) :
- ±20V
- Drain to Source Voltage (Vdss) :
- 600V
- Turn-Off Delay Time :
- 70 ns
- Element Configuration :
- Single
- Power Dissipation Ambient-Max :
- 300 W
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Voltage - Rated DC :
- 600V
- Package / Case :
- TO-247-3
- Gate Charge (Qg) (Max) @ Vgs :
- 170nC @ 10V
- Width :
- 5.3 mm
- Power Dissipation (Max) :
- 300W (Tc)
- Package Shape :
- RECTANGULAR
- Length :
- 16.26 mm
- Terminal Form :
- THROUGH-HOLE
- RoHS Status :
- Non-RoHS Compliant
- Pulsed Drain Current-Max (IDM) :
- 60A
- Qualification Status :
- Not Qualified
- Input Capacitance (Ciss) (Max) @ Vds :
- 4500pF @ 25V
- Case Connection :
- DRAIN
- Operating Mode :
- ENHANCEMENT MODE
- JEDEC-95 Code :
- TO-247AD
- Supplier Device Package :
- TO-247AD (IXFH)
- Published :
- 2000
- Number of Pins :
- 3
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Vgs(th) (Max) @ Id :
- 4.5V @ 4mA
- Gate to Source Voltage (Vgs) :
- 20V
- Transistor Polarity :
- N-Channel
- RoHS :
- Details
- Number of Terminations :
- 3
- Transistor Application :
- SWITCHING
- Rds On (Max) @ Id, Vgs :
- 500m Ω @ 500mA, 10V
- Lead Free :
- Lead Free
- Drain Current-Max (Abs) (ID) :
- 15 A
- Product Status :
- Not For New Designs
- Brand :
- IXYS
- Pin Count :
- 3
- Product Category :
- MOSFET
- Fall Time (Typ) :
- 40 ns
- Terminal Position :
- Single
- Product Type :
- MOSFET
- Power Dissipation :
- 300W
- Package :
- Tube
- Tradename :
- HyperFET
- Mounting Style :
- Through Hole
- Manufacturer :
- IXYS
- Drain-source On Resistance-Max :
- 0.05Ohm
- Mount :
- Through Hole
- Base Product Number :
- IXFH15
- Transistor Type :
- 1 N-Channel
- Number of Elements :
- 1
- Power Dissipation-Max (Abs) :
- 300 W
- Pbfree Code :
- yes
- Number of Channels :
- 1 Channel
- Moisture Sensitivity Level (MSL) :
- Not Applicable
- JESD-30 Code :
- R-PSFM-T3
- DS Breakdown Voltage-Min :
- 600 V
- Power Dissipation-Max :
- 300W Tc
- FET Feature :
- --
- Series :
- HiPerFET™
- Datasheets
- IXFH15N60

N-Channel Tube 500m Ω @ 500mA, 10V ±20V 4500pF @ 25V 170nC @ 10V 600V TO-247-3
IXFH15N60 Overview
The maximum input capacitance of this device is 4500pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 15A.When VGS=600V, and ID flows to VDS at 600VVDS, the drain-source breakdown voltage is 600V in this device.As shown in the table below, the drain current of this device is 15 A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 70 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 60A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 600 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 600V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
IXFH15N60 Features
a continuous drain current (ID) of 15A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 70 ns
based on its rated peak drain current 60A.
a 600V drain to source voltage (Vdss)
IXFH15N60 Applications
There are a lot of IXYS
IXFH15N60 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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