IXFH15N60

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Mfr.Part #
IXFH15N60
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 600V 15A TO-247AD
Stock
377
In Stock :
377

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Channel Mode :
Enhancement
Height :
21.46 mm
Transistor Element Material :
SILICON
Operating Temperature :
-55°C~150°C TJ
Current Rating :
15A
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Drain to Source Breakdown Voltage :
600V
Minimum Operating Temperature :
- 55 C
FET Type :
N-Channel
Maximum Operating Temperature :
+ 150 C
Continuous Drain Current (ID) :
15A
Surface Mount :
No
Number of Terminals :
3
Mounting Type :
Through Hole
Current - Continuous Drain (Id) @ 25°C :
15A Tc
Polarity/Channel Type :
N-Channel
Rise Time :
43ns
Packaging :
Tube
Configuration :
Single
Reach Compliance Code :
Compliant
Vgs (Max) :
±20V
Drain to Source Voltage (Vdss) :
600V
Turn-Off Delay Time :
70 ns
Element Configuration :
Single
Power Dissipation Ambient-Max :
300 W
Drive Voltage (Max Rds On,Min Rds On) :
10V
Voltage - Rated DC :
600V
Package / Case :
TO-247-3
Gate Charge (Qg) (Max) @ Vgs :
170nC @ 10V
Width :
5.3 mm
Power Dissipation (Max) :
300W (Tc)
Package Shape :
RECTANGULAR
Length :
16.26 mm
Terminal Form :
THROUGH-HOLE
RoHS Status :
Non-RoHS Compliant
Pulsed Drain Current-Max (IDM) :
60A
Qualification Status :
Not Qualified
Input Capacitance (Ciss) (Max) @ Vds :
4500pF @ 25V
Case Connection :
DRAIN
Operating Mode :
ENHANCEMENT MODE
JEDEC-95 Code :
TO-247AD
Supplier Device Package :
TO-247AD (IXFH)
Published :
2000
Number of Pins :
3
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Vgs(th) (Max) @ Id :
4.5V @ 4mA
Gate to Source Voltage (Vgs) :
20V
Transistor Polarity :
N-Channel
RoHS :
Details
Number of Terminations :
3
Transistor Application :
SWITCHING
Rds On (Max) @ Id, Vgs :
500m Ω @ 500mA, 10V
Lead Free :
Lead Free
Drain Current-Max (Abs) (ID) :
15 A
Product Status :
Not For New Designs
Brand :
IXYS
Pin Count :
3
Product Category :
MOSFET
Fall Time (Typ) :
40 ns
Terminal Position :
Single
Product Type :
MOSFET
Power Dissipation :
300W
Package :
Tube
Tradename :
HyperFET
Mounting Style :
Through Hole
Manufacturer :
IXYS
Drain-source On Resistance-Max :
0.05Ohm
Mount :
Through Hole
Base Product Number :
IXFH15
Transistor Type :
1 N-Channel
Number of Elements :
1
Power Dissipation-Max (Abs) :
300 W
Pbfree Code :
yes
Number of Channels :
1 Channel
Moisture Sensitivity Level (MSL) :
Not Applicable
JESD-30 Code :
R-PSFM-T3
DS Breakdown Voltage-Min :
600 V
Power Dissipation-Max :
300W Tc
FET Feature :
--
Series :
HiPerFET™
Datasheets
IXFH15N60
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFH15N60 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, Package / Case:TO-247-3, Number of Pins:3, Number of Terminations:3, Number of Channels:1 Channel, IXFH15N60 pinout, IXFH15N60 datasheet PDF, IXFH15N60 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFH15N60 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFH15N60


N-Channel Tube 500m Ω @ 500mA, 10V ±20V 4500pF @ 25V 170nC @ 10V 600V TO-247-3

IXFH15N60 Overview


The maximum input capacitance of this device is 4500pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 15A.When VGS=600V, and ID flows to VDS at 600VVDS, the drain-source breakdown voltage is 600V in this device.As shown in the table below, the drain current of this device is 15 A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 70 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 60A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 600 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 600V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

IXFH15N60 Features


a continuous drain current (ID) of 15A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 70 ns
based on its rated peak drain current 60A.
a 600V drain to source voltage (Vdss)


IXFH15N60 Applications


There are a lot of IXYS
IXFH15N60 applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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