IXFH15N100Q3

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-247-3

Height :

16.26mm

Mount :

Through Hole

Mounting Style :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

15A Tc

Rise Time :

250ns

Drain Current-Max (Abs) (ID) :

15 A

Brand :

IXYS

Power Dissipation :

690W

Input Capacitance (Ciss) (Max) @ Vds :

3250pF @ 25V

Power Dissipation-Max :

690W Tc

Lead Free :

Lead Free

Qualification :

-

Element Configuration :

Single

Pin Count :

3

Supplier Device Package :

TO-247AD (IXFH)

Number of Pins :

3

Rds On (Max) @ Id, Vgs :

1.05 Ω @ 7.5A, 10V

Drain to Source Voltage (Vdss) :

1000V

Number of Terminations :

3

Surface Mount :

No

Polarity/Channel Type :

N-Channel

Number of Elements per Chip :

1

Channel Mode :

Enhancement

Terminal Position :

Single

Length :

16.26mm

JESD-30 Code :

R-PSFM-T3

Package Shape :

RECTANGULAR

RoHS :

Details

Gate to Source Voltage (Vgs) :

30V

Vgs(th) (Max) @ Id :

6.5V @ 4mA

Channel Type :

N

Operating Mode :

ENHANCEMENT MODE

Pulsed Drain Current-Max (IDM) :

45A

Package Type :

TO-247

FET Feature :

--

Base Product Number :

IXFH15

Operating Temperature :

-55°C~150°C TJ

Avalanche Energy Rating (Eas) :

1000 mJ

Vgs (Max) :

±30V

RoHS Status :

ROHS3 Compliant

Series :

HiPerFET™

Configuration :

Single

JEDEC-95 Code :

TO-247

Power Dissipation-Max (Abs) :

690 W

Manufacturer :

IXYS

Factory Lead Time :

20 Weeks

Continuous Drain Current Id :

15A

Additional Feature :

AVALANCHE RATED

Power Dissipation (Max) :

690W (Tc)

Case Connection :

DRAIN

Gate Charge (Qg) (Max) @ Vgs :

64nC @ 10V

Mounting Type :

Through Hole

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Turn On Delay Time :

28 ns

Tradename :

HiPerFET

Width :

5.3mm

Maximum Operating Temperature :

+150 °C

Transistor Polarity :

N-Channel

Minimum Operating Temperature :

-55 °C

Published :

2011

Reach Compliance Code :

Unknown

Drain to Source Breakdown Voltage :

1kV

DS Breakdown Voltage-Min :

1000 V

Product Category :

MOSFET

Terminal Form :

THROUGH-HOLE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Transistor Application :

SWITCHING

Number of Channels :

1

Number of Terminals :

3

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

1.05 Ω

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

10V

Turn-Off Delay Time :

30 ns

Packaging :

Tube

Transistor Type :

1 N-Channel

Continuous Drain Current (ID) :

15A

Package :

Tube

Product Status :

Active

Product Type :

MOSFET