IXFH15N100P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Maximum Operating Temperature :

+ 150 C

Manufacturer :

IXYS

Height :

21.46 mm

Reach Compliance Code :

Compliant

JEDEC-95 Code :

TO-247

Number of Channels :

1 Channel

Rise Time :

44ns

Terminal Position :

Single

Length :

16.26 mm

Vgs (Max) :

±30V

Factory Lead Time :

30 Weeks

Tradename :

HiPerFET

DS Breakdown Voltage-Min :

1000 V

Package Shape :

RECTANGULAR

Mounting Type :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Configuration :

Single

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Product Category :

MOSFET

FET Type :

N-Channel

Drain to Source Breakdown Voltage :

1kV

Gate to Source Voltage (Vgs) :

30V

Lead Free :

Lead Free

Supplier Device Package :

TO-247AD (IXFH)

Case Connection :

DRAIN

Transistor Polarity :

N-Channel

Surface Mount :

No

RoHS :

Details

Drain to Source Voltage (Vdss) :

1000V

Transistor Type :

1 N-Channel

Power Dissipation-Max (Abs) :

543 W

Terminal Form :

THROUGH-HOLE

Current - Continuous Drain (Id) @ 25°C :

15A Tc

Fall Time (Typ) :

58 ns

Transistor Element Material :

SILICON

Product Status :

Active

Brand :

IXYS

Number of Terminations :

3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Width :

5.3 mm

Number of Elements :

1

Continuous Drain Current (ID) :

15A

Avalanche Energy Rating (Eas) :

500 mJ

Power Dissipation :

543W

Transistor Application :

SWITCHING

FET Feature :

--

Minimum Operating Temperature :

- 55 C

Gate Charge (Qg) (Max) @ Vgs :

97nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

5140pF @ 25V

Channel Mode :

Enhancement

Turn-Off Delay Time :

44 ns

Mount :

Through Hole

Published :

2008

Radiation Hardening :

No

Rds On (Max) @ Id, Vgs :

760m Ω @ 500mA, 10V

Element Configuration :

Single

Operating Temperature :

-55°C~150°C TJ

Power Dissipation (Max) :

543W (Tc)

Packaging :

Tube

Additional Feature :

AVALANCHE RATED

Polarity/Channel Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

6.5V @ 1mA

Number of Terminals :

3

JESD-30 Code :

R-PSFM-T3

Drain Current-Max (Abs) (ID) :

15 A

Pulsed Drain Current-Max (IDM) :

40A

Qualification Status :

Not Qualified

Resistance :

760mOhm

Package / Case :

TO-247-3

Drain-source On Resistance-Max :

0.76 Ω

Product Type :

MOSFET

Power Dissipation-Max :

543W Tc

Type :

Polar Power MOSFET HiPerFET

Mounting Style :

Through Hole

Base Product Number :

IXFH15

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Package :

Tube

Pin Count :

3

Series :

HiPerFET™, PolarP2™

JESD-609 Code :

e1

RoHS Status :

ROHS3 Compliant