IXFH15N100P

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Mfr.Part #
IXFH15N100P
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 1000V 15A TO247AD
Stock
85
In Stock :
85

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Terminal Position :
Single
DS Breakdown Voltage-Min :
1000 V
Rise Time :
44ns
Power Dissipation (Max) :
543W (Tc)
Brand :
IXYS
Package / Case :
TO-247-3
Rds On (Max) @ Id, Vgs :
760m Ω @ 500mA, 10V
Drain to Source Voltage (Vdss) :
1000V
JESD-609 Code :
e1
Operating Mode :
ENHANCEMENT MODE
FET Type :
N-Channel
Pin Count :
3
Reach Compliance Code :
Compliant
Transistor Application :
SWITCHING
Vgs (Max) :
±30V
Factory Lead Time :
30 Weeks
Pulsed Drain Current-Max (IDM) :
40A
Vgs(th) (Max) @ Id :
6.5V @ 1mA
FET Feature :
--
Element Configuration :
Single
Drain-source On Resistance-Max :
0.76 Ω
Avalanche Energy Rating (Eas) :
500 mJ
Base Product Number :
IXFH15
RoHS :
Details
Transistor Element Material :
SILICON
Input Capacitance (Ciss) (Max) @ Vds :
5140pF @ 25V
Power Dissipation-Max :
543W Tc
Gate to Source Voltage (Vgs) :
30V
Power Dissipation-Max (Abs) :
543 W
Height :
21.46 mm
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Number of Terminations :
3
Width :
5.3 mm
Transistor Type :
1 N-Channel
Series :
HiPerFET™, PolarP2™
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Type :
Polar Power MOSFET HiPerFET
Current - Continuous Drain (Id) @ 25°C :
15A Tc
Pbfree Code :
yes
Lead Free :
Lead Free
Drive Voltage (Max Rds On,Min Rds On) :
10V
Maximum Operating Temperature :
+ 150 C
Mounting Type :
Through Hole
Manufacturer :
IXYS
Package :
Tube
Fall Time (Typ) :
58 ns
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Length :
16.26 mm
Mounting Style :
Through Hole
Turn-Off Delay Time :
44 ns
Terminal Form :
THROUGH-HOLE
Continuous Drain Current (ID) :
15A
Product Status :
Active
Drain Current-Max (Abs) (ID) :
15 A
Resistance :
760mOhm
Tradename :
HiPerFET
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Published :
2008
RoHS Status :
ROHS3 Compliant
Operating Temperature :
-55°C~150°C TJ
Product Category :
MOSFET
Supplier Device Package :
TO-247AD (IXFH)
JESD-30 Code :
R-PSFM-T3
Qualification Status :
Not Qualified
Case Connection :
DRAIN
Power Dissipation :
543W
Drain to Source Breakdown Voltage :
1kV
Minimum Operating Temperature :
- 55 C
Surface Mount :
No
Additional Feature :
AVALANCHE RATED
Radiation Hardening :
No
Package Shape :
RECTANGULAR
Product Type :
MOSFET
Mount :
Through Hole
Gate Charge (Qg) (Max) @ Vgs :
97nC @ 10V
JEDEC-95 Code :
TO-247
Polarity/Channel Type :
N-Channel
Number of Channels :
1 Channel
Transistor Polarity :
N-Channel
Packaging :
Tube
Configuration :
Single
Number of Elements :
1
Channel Mode :
Enhancement
Number of Terminals :
3
Datasheets
IXFH15N100P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFH15N100P from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-247-3, Number of Terminations:3, Type:Polar Power MOSFET HiPerFET, Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, Number of Channels:1 Channel, IXFH15N100P pinout, IXFH15N100P datasheet PDF, IXFH15N100P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFH15N100P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFH15N100P


N-Channel Tube 760m Ω @ 500mA, 10V ±30V 5140pF @ 25V 97nC @ 10V 1000V TO-247-3

IXFH15N100P Overview


When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 500 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 5140pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 15A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=1kV. And this device has 1kV drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 15 A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 44 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 40A.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 30V.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 1000 V in order to maintain normal operation.Operating this transistor requires a 1000V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

IXFH15N100P Features


the avalanche energy rating (Eas) is 500 mJ
a continuous drain current (ID) of 15A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 44 ns
based on its rated peak drain current 40A.
a 1000V drain to source voltage (Vdss)


IXFH15N100P Applications


There are a lot of IXYS
IXFH15N100P applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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