IXFH15N100

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Mfr.Part #
IXFH15N100
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 1000V 15A TO247AD
Stock
4,160
In Stock :
4,160

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
FET Type :
N-Channel
Terminal Position :
Single
Additional Feature :
AVALANCHE RATED
Package / Case :
TO-247-3
Width :
5.3 mm
Operating Temperature :
-55°C~150°C TJ
JESD-609 Code :
e1
FET Feature :
--
Lead Free :
Lead Free
Operating Mode :
ENHANCEMENT MODE
JEDEC-95 Code :
TO-247
Drain Current-Max (Abs) (ID) :
15 A
Reach Compliance Code :
Compliant
Series :
HiPerFET™, PolarP2™
Transistor Element Material :
SILICON
JESD-30 Code :
R-PSFM-T3
RoHS Status :
ROHS3 Compliant
Factory Lead Time :
30 Weeks
Pulsed Drain Current-Max (IDM) :
40A
Product Category :
MOSFET
Drain-source On Resistance-Max :
0.76 Ω
Qualification Status :
Not Qualified
Continuous Drain Current (ID) :
15A
Polarity/Channel Type :
N-Channel
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Mounting Style :
Through Hole
Mount :
Through Hole
Resistance :
760mOhm
Power Dissipation-Max (Abs) :
543 W
Element Configuration :
Single
Mounting Type :
Through Hole
Product Type :
MOSFET
Radiation Hardening :
No
Pin Count :
3
Rds On (Max) @ Id, Vgs :
760m Ω @ 500mA, 10V
Transistor Application :
SWITCHING
Supplier Device Package :
TO-247AD (IXFH)
RoHS :
Details
Input Capacitance (Ciss) (Max) @ Vds :
5140pF @ 25V
Case Connection :
DRAIN
Drain to Source Breakdown Voltage :
1kV
Pbfree Code :
yes
Type :
Polar Power MOSFET HiPerFET
Product Status :
Active
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Number of Channels :
1 Channel
Configuration :
Single
Drive Voltage (Max Rds On,Min Rds On) :
10V
DS Breakdown Voltage-Min :
1000 V
Gate to Source Voltage (Vgs) :
30V
Height :
21.46 mm
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Published :
2008
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Package :
Tube
Transistor Polarity :
N-Channel
Terminal Form :
THROUGH-HOLE
Number of Elements :
1
Manufacturer :
IXYS
Maximum Operating Temperature :
+ 150 C
Length :
16.26 mm
Avalanche Energy Rating (Eas) :
500 mJ
Number of Terminals :
3
Packaging :
Tube
Tradename :
HiPerFET
Current - Continuous Drain (Id) @ 25°C :
15A Tc
Vgs (Max) :
±30V
Minimum Operating Temperature :
- 55 C
Turn-Off Delay Time :
44 ns
Gate Charge (Qg) (Max) @ Vgs :
97nC @ 10V
Base Product Number :
IXFH15
Brand :
IXYS
Transistor Type :
1 N-Channel
Fall Time (Typ) :
58 ns
Channel Mode :
Enhancement
Drain to Source Voltage (Vdss) :
1000V
Number of Terminations :
3
Power Dissipation (Max) :
543W (Tc)
Rise Time :
44ns
Power Dissipation :
543W
Vgs(th) (Max) @ Id :
6.5V @ 1mA
Package Shape :
RECTANGULAR
Surface Mount :
No
Power Dissipation-Max :
543W Tc
Datasheets
IXFH15N100
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFH15N100 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-247-3, Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, Type:Polar Power MOSFET HiPerFET, Number of Channels:1 Channel, Number of Terminations:3, IXFH15N100 pinout, IXFH15N100 datasheet PDF, IXFH15N100 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFH15N100 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFH15N100


N-Channel Tube 760m Ω @ 500mA, 10V ±30V 5140pF @ 25V 97nC @ 10V 1000V TO-247-3

IXFH15N100P Overview


When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 500 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 5140pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 15A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=1kV. And this device has 1kV drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 15 A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 44 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 40A.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 30V.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 1000 V in order to maintain normal operation.Operating this transistor requires a 1000V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

IXFH15N100P Features


the avalanche energy rating (Eas) is 500 mJ
a continuous drain current (ID) of 15A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 44 ns
based on its rated peak drain current 40A.
a 1000V drain to source voltage (Vdss)


IXFH15N100P Applications


There are a lot of IXYS
IXFH15N100P applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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