IXFH150N15P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

150V

Gate to Source Voltage (Vgs) :

20V

Channel Mode :

Enhancement

Maximum Operating Temperature :

+ 175 C

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-609 Code :

e1

Transistor Application :

SWITCHING

Pbfree Code :

yes

Type :

PolarHT HiPerFET Power MOSFET

Rds On Max :

13 mΩ

Drain-source On Resistance-Max :

0.013Ohm

RoHS Status :

ROHS3 Compliant

Polarity/Channel Type :

N-Channel

Power Dissipation :

714W

Product Status :

Active

Power Dissipation (Max) :

714W (Tc)

RoHS :

Details

Case Connection :

DRAIN

Number of Channels :

1 Channel

Lead Free :

Lead Free

Manufacturer :

IXYS

Number of Terminals :

3

Package Shape :

RECTANGULAR

Subcategory :

MOSFETs

Length :

16.26 mm

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Max Power Dissipation :

714 W

Avalanche Energy Rating (Eas) :

2500 mJ

Mounting Style :

Through Hole

Supplier Device Package :

TO-247AD (IXFH)

Product Type :

MOSFET

Terminal Position :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Reach Compliance Code :

Compliant

Transistor Type :

1 N-Channel

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

190nC @ 10V

ECCN Code :

EAR99

Power Dissipation-Max :

714W Tc

Min Operating Temperature :

-55 °C

Brand :

IXYS

Published :

2006

Drain to Source Breakdown Voltage :

150V

Input Capacitance (Ciss) (Max) @ Vds :

5800pF @ 25V

Max Operating Temperature :

175 °C

Element Configuration :

Single

Packaging :

Tube

Product Category :

MOSFET

Pin Count :

3

Height :

21.46 mm

Transistor Polarity :

N-Channel

Qualification Status :

Not Qualified

Surface Mount :

No

Fall Time (Typ) :

28 ns

Turn-Off Delay Time :

100 ns

DS Breakdown Voltage-Min :

150 V

Base Product Number :

IXFH150

Vgs (Max) :

±20V

Package / Case :

TO-247-3

Number of Elements :

1

Continuous Drain Current (ID) :

150A

Mounting Type :

Through Hole

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Additional Feature :

AVALANCHE RATED

Pulsed Drain Current-Max (IDM) :

340A

Transistor Element Material :

SILICON

FET Feature :

--

Series :

PolarHT™ HiPerFET™

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package :

Box

Tradename :

HiPerFET

Factory Lead Time :

20 Weeks

Rds On (Max) @ Id, Vgs :

13m Ω @ 500mA, 10V

Number of Terminations :

3

JEDEC-95 Code :

TO-247AD

Terminal Form :

THROUGH-HOLE

Mount :

Through Hole

Vgs(th) (Max) @ Id :

5V @ 4mA

Width :

5.3 mm

Current - Continuous Drain (Id) @ 25°C :

150A Tc

Operating Temperature :

-55°C~175°C TJ

Rise Time :

33ns

Drain to Source Resistance :

13 mΩ

Input Capacitance :

5.8 nF

Configuration :

Single

Minimum Operating Temperature :

- 55 C

JESD-30 Code :

R-PSFM-T3