IXFH150N15P

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Mfr.Part #
IXFH150N15P
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 150V 150A TO247AD
Stock
20
In Stock :
20

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Rds On Max :
13 mΩ
Pin Count :
3
Continuous Drain Current (ID) :
150A
Transistor Element Material :
SILICON
Gate Charge (Qg) (Max) @ Vgs :
190nC @ 10V
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Minimum Operating Temperature :
- 55 C
Polarity/Channel Type :
N-Channel
Type :
PolarHT HiPerFET Power MOSFET
Mounting Style :
Through Hole
Published :
2006
Operating Mode :
ENHANCEMENT MODE
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Gate to Source Voltage (Vgs) :
20V
Package / Case :
TO-247-3
Factory Lead Time :
20 Weeks
Mount :
Through Hole
Brand :
IXYS
Additional Feature :
AVALANCHE RATED
Max Operating Temperature :
175 °C
Surface Mount :
No
Input Capacitance :
5.8 nF
Operating Temperature :
-55°C~175°C TJ
Rds On (Max) @ Id, Vgs :
13m Ω @ 500mA, 10V
Length :
16.26 mm
Mounting Type :
Through Hole
Product Type :
MOSFET
Transistor Polarity :
N-Channel
JESD-30 Code :
R-PSFM-T3
Drain to Source Resistance :
13 mΩ
Drain to Source Voltage (Vdss) :
150V
Terminal Position :
Single
Power Dissipation-Max :
714W Tc
RoHS :
Details
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
JESD-609 Code :
e1
Height :
21.46 mm
Package Shape :
RECTANGULAR
Element Configuration :
Single
Transistor Type :
1 N-Channel
Base Product Number :
IXFH150
Power Dissipation :
714W
Min Operating Temperature :
-55 °C
Number of Elements :
1
Vgs(th) (Max) @ Id :
5V @ 4mA
Maximum Operating Temperature :
+ 175 C
Drain to Source Breakdown Voltage :
150V
FET Type :
N-Channel
Pulsed Drain Current-Max (IDM) :
340A
DS Breakdown Voltage-Min :
150 V
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Transistor Application :
SWITCHING
Input Capacitance (Ciss) (Max) @ Vds :
5800pF @ 25V
Vgs (Max) :
±20V
Number of Terminals :
3
Package :
Box
Terminal Form :
THROUGH-HOLE
Supplier Device Package :
TO-247AD (IXFH)
Avalanche Energy Rating (Eas) :
2500 mJ
Number of Terminations :
3
Fall Time (Typ) :
28 ns
Drain-source On Resistance-Max :
0.013Ohm
Series :
PolarHT™ HiPerFET™
Drive Voltage (Max Rds On,Min Rds On) :
10V
Manufacturer :
IXYS
Number of Channels :
1 Channel
JEDEC-95 Code :
TO-247AD
Reach Compliance Code :
Compliant
Lead Free :
Lead Free
Max Power Dissipation :
714 W
Power Dissipation (Max) :
714W (Tc)
Case Connection :
DRAIN
ECCN Code :
EAR99
Configuration :
Single
Product Status :
Active
FET Feature :
--
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
RoHS Status :
ROHS3 Compliant
Channel Mode :
Enhancement
Turn-Off Delay Time :
100 ns
Qualification Status :
Not Qualified
Current - Continuous Drain (Id) @ 25°C :
150A Tc
Rise Time :
33ns
Pbfree Code :
yes
Packaging :
Tube
Product Category :
MOSFET
Width :
5.3 mm
Tradename :
HiPerFET
Subcategory :
MOSFETs
Datasheets
IXFH150N15P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFH150N15P from Chip IC,where excellence meets affordability. This product stands out with its Type:PolarHT HiPerFET Power MOSFET, Package / Case:TO-247-3, Operating Temperature:-55°C~175°C TJ, Mounting Type:Through Hole, Number of Terminations:3, Number of Channels:1 Channel, IXFH150N15P pinout, IXFH150N15P datasheet PDF, IXFH150N15P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFH150N15P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFH150N15P


N-Channel Tube 13m Ω @ 500mA, 10V ±20V 5800pF @ 25V 190nC @ 10V 150V TO-247-3

IXFH150N15P Overview


In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 2500 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 5800pF @ 25V.This device conducts a continuous drain current (ID) of 150A, which is the maximum continuous current transistor can conduct.Using VGS=150V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 150V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 100 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 340A.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 13 mΩ, which means the device is not biased.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.A normal operation of the DS requires keeping the breakdown voltage above 150 V.This transistor requires a drain-source voltage (Vdss) of 150V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

IXFH150N15P Features


the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 150A
a drain-to-source breakdown voltage of 150V voltage
the turn-off delay time is 100 ns
based on its rated peak drain current 340A.
single MOSFETs transistor is 13 mΩ
a 150V drain to source voltage (Vdss)


IXFH150N15P Applications


There are a lot of IXYS
IXFH150N15P applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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