IXFH150N15P
- Mfr.Part #
- IXFH150N15P
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 150V 150A TO247AD
- Stock
- 20
- In Stock :
- 20
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rds On Max :
- 13 mΩ
- Pin Count :
- 3
- Continuous Drain Current (ID) :
- 150A
- Transistor Element Material :
- SILICON
- Gate Charge (Qg) (Max) @ Vgs :
- 190nC @ 10V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Minimum Operating Temperature :
- - 55 C
- Polarity/Channel Type :
- N-Channel
- Type :
- PolarHT HiPerFET Power MOSFET
- Mounting Style :
- Through Hole
- Published :
- 2006
- Operating Mode :
- ENHANCEMENT MODE
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Gate to Source Voltage (Vgs) :
- 20V
- Package / Case :
- TO-247-3
- Factory Lead Time :
- 20 Weeks
- Mount :
- Through Hole
- Brand :
- IXYS
- Additional Feature :
- AVALANCHE RATED
- Max Operating Temperature :
- 175 °C
- Surface Mount :
- No
- Input Capacitance :
- 5.8 nF
- Operating Temperature :
- -55°C~175°C TJ
- Rds On (Max) @ Id, Vgs :
- 13m Ω @ 500mA, 10V
- Length :
- 16.26 mm
- Mounting Type :
- Through Hole
- Product Type :
- MOSFET
- Transistor Polarity :
- N-Channel
- JESD-30 Code :
- R-PSFM-T3
- Drain to Source Resistance :
- 13 mΩ
- Drain to Source Voltage (Vdss) :
- 150V
- Terminal Position :
- Single
- Power Dissipation-Max :
- 714W Tc
- RoHS :
- Details
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- JESD-609 Code :
- e1
- Height :
- 21.46 mm
- Package Shape :
- RECTANGULAR
- Element Configuration :
- Single
- Transistor Type :
- 1 N-Channel
- Base Product Number :
- IXFH150
- Power Dissipation :
- 714W
- Min Operating Temperature :
- -55 °C
- Number of Elements :
- 1
- Vgs(th) (Max) @ Id :
- 5V @ 4mA
- Maximum Operating Temperature :
- + 175 C
- Drain to Source Breakdown Voltage :
- 150V
- FET Type :
- N-Channel
- Pulsed Drain Current-Max (IDM) :
- 340A
- DS Breakdown Voltage-Min :
- 150 V
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Transistor Application :
- SWITCHING
- Input Capacitance (Ciss) (Max) @ Vds :
- 5800pF @ 25V
- Vgs (Max) :
- ±20V
- Number of Terminals :
- 3
- Package :
- Box
- Terminal Form :
- THROUGH-HOLE
- Supplier Device Package :
- TO-247AD (IXFH)
- Avalanche Energy Rating (Eas) :
- 2500 mJ
- Number of Terminations :
- 3
- Fall Time (Typ) :
- 28 ns
- Drain-source On Resistance-Max :
- 0.013Ohm
- Series :
- PolarHT™ HiPerFET™
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Manufacturer :
- IXYS
- Number of Channels :
- 1 Channel
- JEDEC-95 Code :
- TO-247AD
- Reach Compliance Code :
- Compliant
- Lead Free :
- Lead Free
- Max Power Dissipation :
- 714 W
- Power Dissipation (Max) :
- 714W (Tc)
- Case Connection :
- DRAIN
- ECCN Code :
- EAR99
- Configuration :
- Single
- Product Status :
- Active
- FET Feature :
- --
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- Channel Mode :
- Enhancement
- Turn-Off Delay Time :
- 100 ns
- Qualification Status :
- Not Qualified
- Current - Continuous Drain (Id) @ 25°C :
- 150A Tc
- Rise Time :
- 33ns
- Pbfree Code :
- yes
- Packaging :
- Tube
- Product Category :
- MOSFET
- Width :
- 5.3 mm
- Tradename :
- HiPerFET
- Subcategory :
- MOSFETs
- Datasheets
- IXFH150N15P

N-Channel Tube 13m Ω @ 500mA, 10V ±20V 5800pF @ 25V 190nC @ 10V 150V TO-247-3
IXFH150N15P Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 2500 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 5800pF @ 25V.This device conducts a continuous drain current (ID) of 150A, which is the maximum continuous current transistor can conduct.Using VGS=150V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 150V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 100 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 340A.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 13 mΩ, which means the device is not biased.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.A normal operation of the DS requires keeping the breakdown voltage above 150 V.This transistor requires a drain-source voltage (Vdss) of 150V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IXFH150N15P Features
the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 150A
a drain-to-source breakdown voltage of 150V voltage
the turn-off delay time is 100 ns
based on its rated peak drain current 340A.
single MOSFETs transistor is 13 mΩ
a 150V drain to source voltage (Vdss)
IXFH150N15P Applications
There are a lot of IXYS
IXFH150N15P applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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