IXFH14N80

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

800V

Vgs (Max) :

±20V

Turn Off Time-Max (toff) :

150ns

Power Dissipation-Max (Abs) :

300 W

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power Dissipation :

300W

Transistor Application :

SWITCHING

Polarity/Channel Type :

N-Channel

Transistor Polarity :

N-Channel

Mount :

Through Hole

Number of Elements :

1

Drain Current-Max (Abs) (ID) :

14 A

Surface Mount :

No

Pbfree Code :

yes

Channel Mode :

Enhancement

Maximum Operating Temperature :

+ 150 C

Configuration :

Single

DS Breakdown Voltage-Min :

800 V

Current - Continuous Drain (Id) @ 25°C :

14A Tc

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Product Status :

Active

Gate to Source Voltage (Vgs) :

20V

Rds On (Max) @ Id, Vgs :

700m Ω @ 500mA, 10V

Series :

HiPerFET™

Input Capacitance (Ciss) (Max) @ Vds :

4870pF @ 25V

Supplier Device Package :

TO-247AD (IXFH)

Factory Lead Time :

30 Weeks

Drain-source On Resistance-Max :

0.7Ohm

Product Category :

MOSFET

Vgs(th) (Max) @ Id :

4.5V @ 4mA

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package / Case :

TO-247-3

Mounting Style :

Through Hole

Package :

Tube

FET Feature :

--

Number of Pins :

3

Recovery Time :

250 ns

Package Shape :

RECTANGULAR

Power Dissipation (Max) :

300W (Tc)

Width :

5.3 mm

Number of Channels :

1 Channel

Additional Feature :

AVALANCHE RATED

Pulsed Drain Current-Max (IDM) :

56A

Element Configuration :

Single

Mounting Type :

Through Hole

JESD-30 Code :

R-PSFM-T3

Turn On Time-Max (ton) :

100ns

Lead Free :

Lead Free

Drain to Source Breakdown Voltage :

800V

Gate Charge (Qg) (Max) @ Vgs :

200nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Length :

16.26 mm

Base Product Number :

IXFH14

Case Connection :

DRAIN

JEDEC-95 Code :

TO-247AD

Turn-Off Delay Time :

63 ns

Reach Compliance Code :

Compliant

FET Type :

N-Channel

Published :

2003

Product Type :

MOSFET

Rise Time :

33ns

Power Dissipation-Max :

300W Tc

Qualification Status :

Not Qualified

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

Single

Terminal Form :

THROUGH-HOLE

Transistor Element Material :

SILICON

RoHS :

Details

Brand :

IXYS

Transistor Type :

1 N-Channel

Number of Terminations :

3

Number of Terminals :

3

FET Technology :

METAL-OXIDE SEMICONDUCTOR

RoHS Status :

ROHS3 Compliant

Height :

21.46 mm

Fall Time (Typ) :

32 ns

Manufacturer :

IXYS

Pin Count :

3

Tradename :

HyperFET

Power Dissipation Ambient-Max :

300 W

Minimum Operating Temperature :

- 55 C

Packaging :

Tube

Continuous Drain Current (ID) :

14A

Operating Temperature :

-55°C~150°C TJ