IXFH14N80
- Mfr.Part #
- IXFH14N80
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 800V 14A TO247AD
- Stock
- 13,570
- In Stock :
- 13,570
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Recovery Time :
- 250 ns
- Mount :
- Through Hole
- Brand :
- IXYS
- RoHS Status :
- ROHS3 Compliant
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Width :
- 5.3 mm
- Drain to Source Breakdown Voltage :
- 800V
- Pulsed Drain Current-Max (IDM) :
- 56A
- Maximum Operating Temperature :
- + 150 C
- Qualification Status :
- Not Qualified
- Configuration :
- Single
- Drain to Source Voltage (Vdss) :
- 800V
- Rds On (Max) @ Id, Vgs :
- 700m Ω @ 500mA, 10V
- Number of Terminations :
- 3
- Transistor Polarity :
- N-Channel
- Power Dissipation (Max) :
- 300W (Tc)
- Turn-Off Delay Time :
- 63 ns
- Element Configuration :
- Single
- Gate Charge (Qg) (Max) @ Vgs :
- 200nC @ 10V
- JEDEC-95 Code :
- TO-247AD
- Operating Mode :
- ENHANCEMENT MODE
- Surface Mount :
- No
- Drain-source On Resistance-Max :
- 0.7Ohm
- Turn Off Time-Max (toff) :
- 150ns
- Terminal Form :
- THROUGH-HOLE
- Power Dissipation-Max :
- 300W Tc
- DS Breakdown Voltage-Min :
- 800 V
- Turn On Time-Max (ton) :
- 100ns
- Reach Compliance Code :
- Compliant
- Power Dissipation-Max (Abs) :
- 300 W
- Power Dissipation :
- 300W
- Vgs(th) (Max) @ Id :
- 4.5V @ 4mA
- Terminal Position :
- Single
- Mounting Type :
- Through Hole
- Manufacturer :
- IXYS
- Number of Terminals :
- 3
- Packaging :
- Tube
- Case Connection :
- DRAIN
- Drain Current-Max (Abs) (ID) :
- 14 A
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Additional Feature :
- AVALANCHE RATED
- Number of Pins :
- 3
- Package :
- Tube
- Polarity/Channel Type :
- N-Channel
- Published :
- 2003
- Channel Mode :
- Enhancement
- Mounting Style :
- Through Hole
- Series :
- HiPerFET™
- Number of Elements :
- 1
- JESD-30 Code :
- R-PSFM-T3
- FET Type :
- N-Channel
- Gate to Source Voltage (Vgs) :
- 20V
- Package / Case :
- TO-247-3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Supplier Device Package :
- TO-247AD (IXFH)
- Operating Temperature :
- -55°C~150°C TJ
- Product Type :
- MOSFET
- FET Feature :
- --
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Power Dissipation Ambient-Max :
- 300 W
- Transistor Type :
- 1 N-Channel
- Pin Count :
- 3
- Product Status :
- Active
- Package Shape :
- RECTANGULAR
- Pbfree Code :
- yes
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Base Product Number :
- IXFH14
- Factory Lead Time :
- 30 Weeks
- Transistor Element Material :
- SILICON
- Height :
- 21.46 mm
- Rise Time :
- 33ns
- Minimum Operating Temperature :
- - 55 C
- Number of Channels :
- 1 Channel
- Transistor Application :
- SWITCHING
- Vgs (Max) :
- ±20V
- Continuous Drain Current (ID) :
- 14A
- Length :
- 16.26 mm
- Fall Time (Typ) :
- 32 ns
- Tradename :
- HyperFET
- Lead Free :
- Lead Free
- Product Category :
- MOSFET
- RoHS :
- Details
- Input Capacitance (Ciss) (Max) @ Vds :
- 4870pF @ 25V
- Current - Continuous Drain (Id) @ 25°C :
- 14A Tc
- Datasheets
- IXFH14N80

N-Channel Tube 700m Ω @ 500mA, 10V ±20V 4870pF @ 25V 200nC @ 10V 800V TO-247-3
IXFH14N80 Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 4870pF @ 25V.This device has a continuous drain current (ID) of [14A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=800V, the drain-source breakdown voltage is 800V.A device's drain current is its maximum continuous current, and this device's drain current is 14 A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 63 ns.A maximum pulsed drain current of 56A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 800 V.In order to operate this transistor, a voltage of 800V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IXFH14N80 Features
a continuous drain current (ID) of 14A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 63 ns
based on its rated peak drain current 56A.
a 800V drain to source voltage (Vdss)
IXFH14N80 Applications
There are a lot of IXYS
IXFH14N80 applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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