IXFH14N80

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Mfr.Part #
IXFH14N80
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 800V 14A TO247AD
Stock
13,570
In Stock :
13,570

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Recovery Time :
250 ns
Mount :
Through Hole
Brand :
IXYS
RoHS Status :
ROHS3 Compliant
Drive Voltage (Max Rds On,Min Rds On) :
10V
Width :
5.3 mm
Drain to Source Breakdown Voltage :
800V
Pulsed Drain Current-Max (IDM) :
56A
Maximum Operating Temperature :
+ 150 C
Qualification Status :
Not Qualified
Configuration :
Single
Drain to Source Voltage (Vdss) :
800V
Rds On (Max) @ Id, Vgs :
700m Ω @ 500mA, 10V
Number of Terminations :
3
Transistor Polarity :
N-Channel
Power Dissipation (Max) :
300W (Tc)
Turn-Off Delay Time :
63 ns
Element Configuration :
Single
Gate Charge (Qg) (Max) @ Vgs :
200nC @ 10V
JEDEC-95 Code :
TO-247AD
Operating Mode :
ENHANCEMENT MODE
Surface Mount :
No
Drain-source On Resistance-Max :
0.7Ohm
Turn Off Time-Max (toff) :
150ns
Terminal Form :
THROUGH-HOLE
Power Dissipation-Max :
300W Tc
DS Breakdown Voltage-Min :
800 V
Turn On Time-Max (ton) :
100ns
Reach Compliance Code :
Compliant
Power Dissipation-Max (Abs) :
300 W
Power Dissipation :
300W
Vgs(th) (Max) @ Id :
4.5V @ 4mA
Terminal Position :
Single
Mounting Type :
Through Hole
Manufacturer :
IXYS
Number of Terminals :
3
Packaging :
Tube
Case Connection :
DRAIN
Drain Current-Max (Abs) (ID) :
14 A
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Additional Feature :
AVALANCHE RATED
Number of Pins :
3
Package :
Tube
Polarity/Channel Type :
N-Channel
Published :
2003
Channel Mode :
Enhancement
Mounting Style :
Through Hole
Series :
HiPerFET™
Number of Elements :
1
JESD-30 Code :
R-PSFM-T3
FET Type :
N-Channel
Gate to Source Voltage (Vgs) :
20V
Package / Case :
TO-247-3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Supplier Device Package :
TO-247AD (IXFH)
Operating Temperature :
-55°C~150°C TJ
Product Type :
MOSFET
FET Feature :
--
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Power Dissipation Ambient-Max :
300 W
Transistor Type :
1 N-Channel
Pin Count :
3
Product Status :
Active
Package Shape :
RECTANGULAR
Pbfree Code :
yes
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Base Product Number :
IXFH14
Factory Lead Time :
30 Weeks
Transistor Element Material :
SILICON
Height :
21.46 mm
Rise Time :
33ns
Minimum Operating Temperature :
- 55 C
Number of Channels :
1 Channel
Transistor Application :
SWITCHING
Vgs (Max) :
±20V
Continuous Drain Current (ID) :
14A
Length :
16.26 mm
Fall Time (Typ) :
32 ns
Tradename :
HyperFET
Lead Free :
Lead Free
Product Category :
MOSFET
RoHS :
Details
Input Capacitance (Ciss) (Max) @ Vds :
4870pF @ 25V
Current - Continuous Drain (Id) @ 25°C :
14A Tc
Datasheets
IXFH14N80
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFH14N80 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Mounting Type:Through Hole, Number of Pins:3, Package / Case:TO-247-3, Operating Temperature:-55°C~150°C TJ, Number of Channels:1 Channel, IXFH14N80 pinout, IXFH14N80 datasheet PDF, IXFH14N80 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFH14N80 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFH14N80


N-Channel Tube 700m Ω @ 500mA, 10V ±20V 4870pF @ 25V 200nC @ 10V 800V TO-247-3

IXFH14N80 Overview


Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 4870pF @ 25V.This device has a continuous drain current (ID) of [14A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=800V, the drain-source breakdown voltage is 800V.A device's drain current is its maximum continuous current, and this device's drain current is 14 A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 63 ns.A maximum pulsed drain current of 56A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 800 V.In order to operate this transistor, a voltage of 800V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

IXFH14N80 Features


a continuous drain current (ID) of 14A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 63 ns
based on its rated peak drain current 56A.
a 800V drain to source voltage (Vdss)


IXFH14N80 Applications


There are a lot of IXYS
IXFH14N80 applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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