IXFH14N80

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Through Hole

Product Status :

Active

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Product Category :

MOSFET

Width :

5.3 mm

Vgs (Max) :

±20V

Supplier Device Package :

TO-247AD (IXFH)

Reach Compliance Code :

Compliant

Gate to Source Voltage (Vgs) :

20V

Turn Off Time-Max (toff) :

150ns

Recovery Time :

250 ns

Number of Elements :

1

Mounting Style :

Through Hole

Minimum Operating Temperature :

- 55 C

Turn On Time-Max (ton) :

100ns

Operating Temperature :

-55°C~150°C TJ

Series :

HiPerFET™

Case Connection :

DRAIN

Vgs(th) (Max) @ Id :

4.5V @ 4mA

Pbfree Code :

yes

Number of Channels :

1 Channel

Input Capacitance (Ciss) (Max) @ Vds :

4870pF @ 25V

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Published :

2003

Current - Continuous Drain (Id) @ 25°C :

14A Tc

Number of Pins :

3

Drain to Source Voltage (Vdss) :

800V

Polarity/Channel Type :

N-Channel

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Package / Case :

TO-247-3

Transistor Application :

SWITCHING

Power Dissipation (Max) :

300W (Tc)

Lead Free :

Lead Free

Pulsed Drain Current-Max (IDM) :

56A

FET Type :

N-Channel

Number of Terminals :

3

Transistor Polarity :

N-Channel

Surface Mount :

No

Drain to Source Breakdown Voltage :

800V

Length :

16.26 mm

Tradename :

HyperFET

JESD-30 Code :

R-PSFM-T3

Channel Mode :

Enhancement

Pin Count :

3

Rds On (Max) @ Id, Vgs :

700m Ω @ 500mA, 10V

Base Product Number :

IXFH14

Package Shape :

RECTANGULAR

Transistor Type :

1 N-Channel

Package :

Tube

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate Charge (Qg) (Max) @ Vgs :

200nC @ 10V

Brand :

IXYS

Manufacturer :

IXYS

Power Dissipation-Max :

300W Tc

Drain-source On Resistance-Max :

0.7Ohm

JEDEC-95 Code :

TO-247AD

Power Dissipation-Max (Abs) :

300 W

Element Configuration :

Single

Number of Terminations :

3

Additional Feature :

AVALANCHE RATED

Height :

21.46 mm

Turn-Off Delay Time :

63 ns

RoHS Status :

ROHS3 Compliant

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Product Type :

MOSFET

Configuration :

Single

Fall Time (Typ) :

32 ns

Power Dissipation :

300W

FET Feature :

--

Packaging :

Tube

Operating Mode :

ENHANCEMENT MODE

Rise Time :

33ns

Drain Current-Max (Abs) (ID) :

14 A

Continuous Drain Current (ID) :

14A

Maximum Operating Temperature :

+ 150 C

Factory Lead Time :

30 Weeks

DS Breakdown Voltage-Min :

800 V

Power Dissipation Ambient-Max :

300 W

Terminal Position :

Single

RoHS :

Details

Qualification Status :

Not Qualified

Mounting Type :

Through Hole

Terminal Form :

THROUGH-HOLE