IXFH14N60P3

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~150°C TJ

JESD-30 Code :

R-PSFM-T3

Continuous Drain Current (ID) :

14A

Pin Count :

3

Reach Compliance Code :

Compliant

Terminal Position :

Single

Number of Pins :

3

Package Shape :

RECTANGULAR

Transistor Polarity :

N-Channel

Avalanche Energy Rating (Eas) :

700 mJ

Packaging :

Tube

Drain to Source Voltage (Vdss) :

600V

Power Dissipation-Max (Abs) :

327 W

Package :

Tube

Vgs(th) (Max) @ Id :

5V @ 1mA

Current - Continuous Drain (Id) @ 25°C :

14A Tc

Drain Current-Max (Abs) (ID) :

14 A

DS Breakdown Voltage-Min :

600V

Package / Case :

TO-247-3

Transistor Element Material :

SILICON

Case Connection :

DRAIN

Factory Lead Time :

24 Weeks

Maximum Operating Temperature :

+ 150 C

Polarity/Channel Type :

N-Channel

Terminal Form :

THROUGH-HOLE

Mount :

Through Hole

Mounting Style :

Through Hole

Pulsed Drain Current-Max (IDM) :

35 A

Brand :

IXYS

Product Status :

Active

Series :

HiPerFET™, Polar3™

Product Type :

MOSFET

Product Category :

MOSFET

Manufacturer :

IXYS

Height :

21.46mm

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

1480pF @ 25V

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 10V

Tradename :

HiPerFET

Mounting Type :

Through Hole

FET Technology :

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code :

TO-247AD

Supplier Device Package :

TO-247AD (IXFH)

Channel Mode :

Enhancement

Surface Mount :

No

Element Configuration :

Single

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±30V

Length :

16.26mm

Base Product Number :

IXFH14

Width :

5.3mm

Turn On Delay Time :

21 ns

Power Dissipation-Max :

327W Tc

Minimum Operating Temperature :

- 55 C

Transistor Type :

1 N-Channel

Number of Terminals :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Number of Elements :

1

FET Type :

N-Channel

Number of Terminations :

3

Power Dissipation (Max) :

327W (Tc)

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Feature :

--

Drain-source On Resistance-Max :

0.54Ohm

Turn-Off Delay Time :

43 ns

Number of Channels :

1 Channel

Rds On (Max) @ Id, Vgs :

540m Ω @ 7A, 10V

Configuration :

Single

Published :

2011

Additional Feature :

AVALANCHE RATED

Gate to Source Voltage (Vgs) :

30V