IXFH14N60P

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Mfr.Part #
IXFH14N60P
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 600V 14A TO247AD
Stock
24
In Stock :
24

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Transistor Application :
SWITCHING
FET Type :
N-Channel
Power Dissipation-Max :
300W Tc
Package / Case :
TO-247-3
Pbfree Code :
yes
Current Rating :
14A
Reverse Recovery Time :
200 ns
Case Connection :
DRAIN
Drive Voltage (Max Rds On,Min Rds On) :
10V
Qualification Status :
Not Qualified
Mount :
Through Hole
Width :
5.3mm
Mounting Type :
Through Hole
Product Type :
MOSFET
Package :
Tube
Rise Time :
27ns
Vgs (Max) :
±30V
Termination :
Through Hole
Operating Mode :
ENHANCEMENT MODE
Transistor Element Material :
SILICON
Number of Pins :
3
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Number of Elements per Chip :
1
Power Dissipation-Max (Abs) :
300 W
Terminal Position :
Single
Minimum Operating Temperature :
- 55 C
Gate to Source Voltage (Vgs) :
30V
Fall Time (Typ) :
26 ns
Input Capacitance (Ciss) (Max) @ Vds :
2500pF @ 25V
FET Technology :
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code :
R-PSFM-T3
Polarity/Channel Type :
N-Channel
Configuration :
Single
Power Dissipation (Max) :
300W (Tc)
Product Category :
MOSFET
JEDEC-95 Code :
TO-247AD
Maximum Operating Temperature :
+ 150 C
Rds On (Max) @ Id, Vgs :
550m Ω @ 7A, 10V
DS Breakdown Voltage-Min :
600 V
Operating Temperature :
-55°C~150°C TJ
Current - Continuous Drain (Id) @ 25°C :
14A Tc
Channel Type :
N
Threshold Voltage :
5.5V
Package Shape :
RECTANGULAR
Channel Mode :
Enhancement
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Continuous Drain Current (ID) :
14A
Height :
21.46mm
Surface Mount :
No
JESD-609 Code :
e1
Packaging :
Tube
REACH SVHC :
No SVHC
Number of Terminations :
3
Dual Supply Voltage :
600V
Product Status :
Active
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Package Type :
TO-247
Drain Current-Max (Abs) (ID) :
14 A
Number of Terminals :
3
RoHS Status :
ROHS3 Compliant
Length :
16.26mm
Voltage - Rated DC :
600V
RoHS :
Details
Published :
2006
Avalanche Energy Rating (Eas) :
900 mJ
Turn On Delay Time :
23 ns
Tradename :
HiPerFET
Drain to Source Breakdown Voltage :
600V
Factory Lead Time :
30 Weeks
Element Configuration :
Single
Gate Charge (Qg) (Max) @ Vgs :
36nC @ 10V
Supplier Device Package :
TO-247AD (IXFH)
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Base Product Number :
IXFH14
Manufacturer :
IXYS
Nominal Vgs :
5.5 V
Mounting Style :
Through Hole
Number of Elements :
1
Number of Channels :
1 Channel
Brand :
IXYS
Power Dissipation :
300W
Transistor Polarity :
N-Channel
Pulsed Drain Current-Max (IDM) :
42A
ECCN Code :
EAR99
Vgs(th) (Max) @ Id :
5.5V @ 2.5mA
Transistor Type :
1 N-Channel
Series :
HiPerFET™, PolarHT™
FET Feature :
--
Pin Count :
3
Reach Compliance Code :
Compliant
Drain to Source Voltage (Vdss) :
600V
Drain-source On Resistance-Max :
0.55Ohm
Turn-Off Delay Time :
70 ns
Lead Free :
Lead Free
Additional Feature :
AVALANCHE RATED
Terminal Form :
THROUGH-HOLE
Datasheets
IXFH14N60P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFH14N60P from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-247-3, Mounting Type:Through Hole, Number of Pins:3, Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, Number of Channels:1 Channel, IXFH14N60P pinout, IXFH14N60P datasheet PDF, IXFH14N60P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFH14N60P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFH14N60P


N-Channel Tube 550m Ω @ 7A, 10V ±30V 2500pF @ 25V 36nC @ 10V 600V TO-247-3

IXFH14N60P Overview


There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 900 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 2500pF @ 25V.This device has a continuous drain current (ID) of [14A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=600V, the drain-source breakdown voltage is 600V.A device's drain current is its maximum continuous current, and this device's drain current is 14 A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 70 ns.A maximum pulsed drain current of 42A is the maximum peak drain current rated for this device.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 23 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 5.5V.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 600 V.In order to operate this transistor, a voltage of 600V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

IXFH14N60P Features


the avalanche energy rating (Eas) is 900 mJ
a continuous drain current (ID) of 14A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 70 ns
based on its rated peak drain current 42A.
a threshold voltage of 5.5V
a 600V drain to source voltage (Vdss)


IXFH14N60P Applications


There are a lot of IXYS
IXFH14N60P applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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