IXFH14N60P
- Mfr.Part #
- IXFH14N60P
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 14A TO247AD
- Stock
- 24
- In Stock :
- 24
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Product Status :
- Active
- Power Dissipation-Max (Abs) :
- 300 W
- Pbfree Code :
- yes
- Drain-source On Resistance-Max :
- 0.55Ohm
- Rds On (Max) @ Id, Vgs :
- 550m Ω @ 7A, 10V
- Termination :
- Through Hole
- Configuration :
- Single
- Package Shape :
- RECTANGULAR
- Drain to Source Breakdown Voltage :
- 600V
- Gate to Source Voltage (Vgs) :
- 30V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Number of Channels :
- 1 Channel
- Element Configuration :
- Single
- Packaging :
- Tube
- Pulsed Drain Current-Max (IDM) :
- 42A
- Transistor Element Material :
- SILICON
- Dual Supply Voltage :
- 600V
- Power Dissipation :
- 300W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Input Capacitance (Ciss) (Max) @ Vds :
- 2500pF @ 25V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Turn-Off Delay Time :
- 70 ns
- Current Rating :
- 14A
- Tradename :
- HiPerFET
- Number of Elements per Chip :
- 1
- Nominal Vgs :
- 5.5 V
- Manufacturer :
- IXYS
- Maximum Operating Temperature :
- + 150 C
- Pin Count :
- 3
- JESD-30 Code :
- R-PSFM-T3
- Gate Charge (Qg) (Max) @ Vgs :
- 36nC @ 10V
- Drain to Source Voltage (Vdss) :
- 600V
- Drain Current-Max (Abs) (ID) :
- 14 A
- Transistor Polarity :
- N-Channel
- Product Category :
- MOSFET
- Qualification Status :
- Not Qualified
- FET Feature :
- --
- Number of Elements :
- 1
- Terminal Position :
- Single
- Fall Time (Typ) :
- 26 ns
- Transistor Type :
- 1 N-Channel
- Power Dissipation (Max) :
- 300W (Tc)
- Factory Lead Time :
- 30 Weeks
- Base Product Number :
- IXFH14
- Turn On Delay Time :
- 23 ns
- Package / Case :
- TO-247-3
- Package Type :
- TO-247
- Minimum Operating Temperature :
- - 55 C
- Mount :
- Through Hole
- Voltage - Rated DC :
- 600V
- ECCN Code :
- EAR99
- Mounting Type :
- Through Hole
- Threshold Voltage :
- 5.5V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Reverse Recovery Time :
- 200 ns
- Continuous Drain Current (ID) :
- 14A
- FET Type :
- N-Channel
- Polarity/Channel Type :
- N-Channel
- DS Breakdown Voltage-Min :
- 600 V
- Current - Continuous Drain (Id) @ 25°C :
- 14A Tc
- JEDEC-95 Code :
- TO-247AD
- Rise Time :
- 27ns
- REACH SVHC :
- No SVHC
- Height :
- 21.46mm
- Surface Mount :
- No
- Supplier Device Package :
- TO-247AD (IXFH)
- Package :
- Tube
- Channel Mode :
- Enhancement
- Length :
- 16.26mm
- Lead Free :
- Lead Free
- Brand :
- IXYS
- RoHS :
- Details
- Power Dissipation-Max :
- 300W Tc
- Number of Pins :
- 3
- Width :
- 5.3mm
- Series :
- HiPerFET™, PolarHT™
- Channel Type :
- N
- Number of Terminals :
- 3
- JESD-609 Code :
- e1
- Additional Feature :
- AVALANCHE RATED
- Terminal Form :
- THROUGH-HOLE
- Vgs(th) (Max) @ Id :
- 5.5V @ 2.5mA
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Published :
- 2006
- Avalanche Energy Rating (Eas) :
- 900 mJ
- Number of Terminations :
- 3
- RoHS Status :
- ROHS3 Compliant
- Vgs (Max) :
- ±30V
- Reach Compliance Code :
- Compliant
- Operating Temperature :
- -55°C~150°C TJ
- Operating Mode :
- ENHANCEMENT MODE
- Case Connection :
- DRAIN
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Transistor Application :
- SWITCHING
- Product Type :
- MOSFET
- Mounting Style :
- Through Hole
- Datasheets
- IXFH14N60P

N-Channel Tube 550m Ω @ 7A, 10V ±30V 2500pF @ 25V 36nC @ 10V 600V TO-247-3
IXFH14N60P Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 900 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 2500pF @ 25V.This device has a continuous drain current (ID) of [14A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=600V, the drain-source breakdown voltage is 600V.A device's drain current is its maximum continuous current, and this device's drain current is 14 A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 70 ns.A maximum pulsed drain current of 42A is the maximum peak drain current rated for this device.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 23 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 5.5V.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 600 V.In order to operate this transistor, a voltage of 600V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IXFH14N60P Features
the avalanche energy rating (Eas) is 900 mJ
a continuous drain current (ID) of 14A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 70 ns
based on its rated peak drain current 42A.
a threshold voltage of 5.5V
a 600V drain to source voltage (Vdss)
IXFH14N60P Applications
There are a lot of IXYS
IXFH14N60P applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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