IXFH14N60P
- Mfr.Part #
- IXFH14N60P
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 14A TO247AD
- Stock
- 24
- In Stock :
- 24
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Application :
- SWITCHING
- FET Type :
- N-Channel
- Power Dissipation-Max :
- 300W Tc
- Package / Case :
- TO-247-3
- Pbfree Code :
- yes
- Current Rating :
- 14A
- Reverse Recovery Time :
- 200 ns
- Case Connection :
- DRAIN
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Qualification Status :
- Not Qualified
- Mount :
- Through Hole
- Width :
- 5.3mm
- Mounting Type :
- Through Hole
- Product Type :
- MOSFET
- Package :
- Tube
- Rise Time :
- 27ns
- Vgs (Max) :
- ±30V
- Termination :
- Through Hole
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Element Material :
- SILICON
- Number of Pins :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Number of Elements per Chip :
- 1
- Power Dissipation-Max (Abs) :
- 300 W
- Terminal Position :
- Single
- Minimum Operating Temperature :
- - 55 C
- Gate to Source Voltage (Vgs) :
- 30V
- Fall Time (Typ) :
- 26 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 2500pF @ 25V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- JESD-30 Code :
- R-PSFM-T3
- Polarity/Channel Type :
- N-Channel
- Configuration :
- Single
- Power Dissipation (Max) :
- 300W (Tc)
- Product Category :
- MOSFET
- JEDEC-95 Code :
- TO-247AD
- Maximum Operating Temperature :
- + 150 C
- Rds On (Max) @ Id, Vgs :
- 550m Ω @ 7A, 10V
- DS Breakdown Voltage-Min :
- 600 V
- Operating Temperature :
- -55°C~150°C TJ
- Current - Continuous Drain (Id) @ 25°C :
- 14A Tc
- Channel Type :
- N
- Threshold Voltage :
- 5.5V
- Package Shape :
- RECTANGULAR
- Channel Mode :
- Enhancement
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Continuous Drain Current (ID) :
- 14A
- Height :
- 21.46mm
- Surface Mount :
- No
- JESD-609 Code :
- e1
- Packaging :
- Tube
- REACH SVHC :
- No SVHC
- Number of Terminations :
- 3
- Dual Supply Voltage :
- 600V
- Product Status :
- Active
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package Type :
- TO-247
- Drain Current-Max (Abs) (ID) :
- 14 A
- Number of Terminals :
- 3
- RoHS Status :
- ROHS3 Compliant
- Length :
- 16.26mm
- Voltage - Rated DC :
- 600V
- RoHS :
- Details
- Published :
- 2006
- Avalanche Energy Rating (Eas) :
- 900 mJ
- Turn On Delay Time :
- 23 ns
- Tradename :
- HiPerFET
- Drain to Source Breakdown Voltage :
- 600V
- Factory Lead Time :
- 30 Weeks
- Element Configuration :
- Single
- Gate Charge (Qg) (Max) @ Vgs :
- 36nC @ 10V
- Supplier Device Package :
- TO-247AD (IXFH)
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Base Product Number :
- IXFH14
- Manufacturer :
- IXYS
- Nominal Vgs :
- 5.5 V
- Mounting Style :
- Through Hole
- Number of Elements :
- 1
- Number of Channels :
- 1 Channel
- Brand :
- IXYS
- Power Dissipation :
- 300W
- Transistor Polarity :
- N-Channel
- Pulsed Drain Current-Max (IDM) :
- 42A
- ECCN Code :
- EAR99
- Vgs(th) (Max) @ Id :
- 5.5V @ 2.5mA
- Transistor Type :
- 1 N-Channel
- Series :
- HiPerFET™, PolarHT™
- FET Feature :
- --
- Pin Count :
- 3
- Reach Compliance Code :
- Compliant
- Drain to Source Voltage (Vdss) :
- 600V
- Drain-source On Resistance-Max :
- 0.55Ohm
- Turn-Off Delay Time :
- 70 ns
- Lead Free :
- Lead Free
- Additional Feature :
- AVALANCHE RATED
- Terminal Form :
- THROUGH-HOLE
- Datasheets
- IXFH14N60P

N-Channel Tube 550m Ω @ 7A, 10V ±30V 2500pF @ 25V 36nC @ 10V 600V TO-247-3
IXFH14N60P Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 900 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 2500pF @ 25V.This device has a continuous drain current (ID) of [14A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=600V, the drain-source breakdown voltage is 600V.A device's drain current is its maximum continuous current, and this device's drain current is 14 A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 70 ns.A maximum pulsed drain current of 42A is the maximum peak drain current rated for this device.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 23 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 5.5V.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 600 V.In order to operate this transistor, a voltage of 600V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IXFH14N60P Features
the avalanche energy rating (Eas) is 900 mJ
a continuous drain current (ID) of 14A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 70 ns
based on its rated peak drain current 42A.
a threshold voltage of 5.5V
a 600V drain to source voltage (Vdss)
IXFH14N60P Applications
There are a lot of IXYS
IXFH14N60P applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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