IXFH14N60P

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Mfr.Part #
IXFH14N60P
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 600V 14A TO247AD
Stock
24
In Stock :
24

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Gate Charge (Qg) (Max) @ Vgs :
36nC @ 10V
Package :
Tube
Drain to Source Voltage (Vdss) :
600V
Operating Temperature :
-55°C~150°C TJ
Tradename :
HiPerFET
Polarity/Channel Type :
N-Channel
Package Shape :
RECTANGULAR
Surface Mount :
No
DS Breakdown Voltage-Min :
600 V
Avalanche Energy Rating (Eas) :
900 mJ
Power Dissipation-Max (Abs) :
300 W
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Transistor Element Material :
SILICON
Height :
21.46mm
Drive Voltage (Max Rds On,Min Rds On) :
10V
Turn On Delay Time :
23 ns
Number of Elements per Chip :
1
Pulsed Drain Current-Max (IDM) :
42A
Number of Terminals :
3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Elements :
1
Pbfree Code :
yes
Nominal Vgs :
5.5 V
RoHS :
Details
Number of Terminations :
3
Dual Supply Voltage :
600V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Product Type :
MOSFET
Pin Count :
3
ECCN Code :
EAR99
Lead Free :
Lead Free
Terminal Form :
THROUGH-HOLE
Product Category :
MOSFET
Terminal Position :
Single
Rds On (Max) @ Id, Vgs :
550m Ω @ 7A, 10V
Current Rating :
14A
Input Capacitance (Ciss) (Max) @ Vds :
2500pF @ 25V
Number of Channels :
1 Channel
Element Configuration :
Single
Supplier Device Package :
TO-247AD (IXFH)
Configuration :
Single
Reach Compliance Code :
Compliant
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Voltage - Rated DC :
600V
Vgs(th) (Max) @ Id :
5.5V @ 2.5mA
Brand :
IXYS
Published :
2006
Gate to Source Voltage (Vgs) :
30V
Package / Case :
TO-247-3
Drain to Source Breakdown Voltage :
600V
Channel Type :
N
REACH SVHC :
No SVHC
JESD-609 Code :
e1
Maximum Operating Temperature :
+ 150 C
Fall Time (Typ) :
26 ns
Transistor Application :
SWITCHING
Manufacturer :
IXYS
FET Type :
N-Channel
Vgs (Max) :
±30V
Transistor Type :
1 N-Channel
Number of Pins :
3
Drain Current-Max (Abs) (ID) :
14 A
JEDEC-95 Code :
TO-247AD
Width :
5.3mm
Current - Continuous Drain (Id) @ 25°C :
14A Tc
Continuous Drain Current (ID) :
14A
Transistor Polarity :
N-Channel
Power Dissipation :
300W
FET Feature :
--
Series :
HiPerFET™, PolarHT™
Factory Lead Time :
30 Weeks
Minimum Operating Temperature :
- 55 C
Product Status :
Active
Mounting Type :
Through Hole
Termination :
Through Hole
Mounting Style :
Through Hole
Reverse Recovery Time :
200 ns
Rise Time :
27ns
Length :
16.26mm
Power Dissipation-Max :
300W Tc
Package Type :
TO-247
Mount :
Through Hole
Additional Feature :
AVALANCHE RATED
Turn-Off Delay Time :
70 ns
Case Connection :
DRAIN
Threshold Voltage :
5.5V
Qualification Status :
Not Qualified
Packaging :
Tube
Power Dissipation (Max) :
300W (Tc)
Channel Mode :
Enhancement
Operating Mode :
ENHANCEMENT MODE
Drain-source On Resistance-Max :
0.55Ohm
Base Product Number :
IXFH14
JESD-30 Code :
R-PSFM-T3
RoHS Status :
ROHS3 Compliant
Datasheets
IXFH14N60P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFH14N60P from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, Number of Channels:1 Channel, Package / Case:TO-247-3, Number of Pins:3, Mounting Type:Through Hole, IXFH14N60P pinout, IXFH14N60P datasheet PDF, IXFH14N60P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFH14N60P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFH14N60P


N-Channel Tube 550m Ω @ 7A, 10V ±30V 2500pF @ 25V 36nC @ 10V 600V TO-247-3

IXFH14N60P Overview


There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 900 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 2500pF @ 25V.This device has a continuous drain current (ID) of [14A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=600V, the drain-source breakdown voltage is 600V.A device's drain current is its maximum continuous current, and this device's drain current is 14 A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 70 ns.A maximum pulsed drain current of 42A is the maximum peak drain current rated for this device.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 23 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 5.5V.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 600 V.In order to operate this transistor, a voltage of 600V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

IXFH14N60P Features


the avalanche energy rating (Eas) is 900 mJ
a continuous drain current (ID) of 14A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 70 ns
based on its rated peak drain current 42A.
a threshold voltage of 5.5V
a 600V drain to source voltage (Vdss)


IXFH14N60P Applications


There are a lot of IXYS
IXFH14N60P applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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