IXFH14N100Q2

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Supplier Device Package :

TO-247AD (IXFH)

Input Capacitance (Ciss) (Max) @ Vds :

2800pF @ 25V

Terminal Position :

Single

Polarity/Channel Type :

N-Channel

Mount :

Through Hole

Reverse Recovery Time :

300 ns

Product Status :

Not For New Designs

Published :

2003

Operating Temperature :

-55°C~150°C TJ

Base Product Number :

IXFH14

DS Breakdown Voltage-Min :

1000 V

Product Category :

MOSFET

JEDEC-95 Code :

TO-247AD

Minimum Operating Temperature :

- 55 C

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

1000V

Configuration :

Single

Package Shape :

RECTANGULAR

Mounting Type :

Through Hole

Fall Time (Typ) :

12 ns

Brand :

IXYS

Weight :

6g

Length :

16.26mm

REACH SVHC :

No SVHC

Package :

Tube

Drive Voltage (Max Rds On,Min Rds On) :

10V

Subcategory :

MOSFETs

Pbfree Code :

yes

Dual Supply Voltage :

1kV

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Tradename :

HiPerFET

Transistor Type :

1 N-Channel

Transistor Polarity :

N-Channel

Package / Case :

TO-247-3

Continuous Drain Current (ID) :

14A

RoHS :

Details

Vgs (Max) :

±30V

Qualification Status :

Not Qualified

Reach Compliance Code :

Compliant

Rds On (Max) @ Id, Vgs :

950m Ω @ 7A, 10V

Current - Continuous Drain (Id) @ 25°C :

14A Tc

Channel Mode :

Enhancement

Surface Mount :

No

Avalanche Energy Rating (Eas) :

2500 mJ

Lead Free :

Lead Free

Product Type :

MOSFET

Threshold Voltage :

5V

Rise Time :

10ns

Resistance :

900mOhm

Series :

HiPerFET™

ECCN Code :

EAR99

JESD-609 Code :

e1

Vgs(th) (Max) @ Id :

5.5V @ 4mA

Additional Feature :

AVALANCHE RATED

Transistor Application :

SWITCHING

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Number of Channels :

1 Channel

Power Dissipation :

500W

FET Type :

N-Channel

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Pulsed Drain Current-Max (IDM) :

56A

Maximum Operating Temperature :

+ 150 C

Number of Pins :

3

Turn-Off Delay Time :

28 ns

Pin Count :

3

Height :

21.46mm

Width :

5.3mm

Factory Lead Time :

8 Weeks

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Turn On Delay Time :

12 ns

Drain-source On Resistance-Max :

0.95 Ω

Mounting Style :

Through Hole

Nominal Vgs :

5 V

Number of Terminals :

3

Power Dissipation-Max :

500W Tc

Termination :

Through Hole

FET Feature :

--

Packaging :

Tube

Gate Charge (Qg) (Max) @ Vgs :

83nC @ 10V

Case Connection :

DRAIN

Gate to Source Voltage (Vgs) :

30V

Drain to Source Breakdown Voltage :

1kV

Element Configuration :

Single

JESD-30 Code :

R-PSFM-T3

Number of Terminations :

3

Power Dissipation (Max) :

500W (Tc)

Manufacturer :

IXYS

Transistor Element Material :

SILICON

Terminal Form :

THROUGH-HOLE

Radiation Hardening :

No