IXFH14N100Q2

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

Single

ECCN Code :

EAR99

Package / Case :

TO-247-3

Pbfree Code :

yes

Maximum Operating Temperature :

+ 150 C

REACH SVHC :

No SVHC

Power Dissipation (Max) :

500W (Tc)

DS Breakdown Voltage-Min :

1000 V

Mount :

Through Hole

Manufacturer :

IXYS

Input Capacitance (Ciss) (Max) @ Vds :

2800pF @ 25V

Gate Charge (Qg) (Max) @ Vgs :

83nC @ 10V

Number of Channels :

1 Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Temperature :

-55°C~150°C TJ

Number of Terminals :

3

Number of Terminations :

3

FET Type :

N-Channel

Product Status :

Not For New Designs

Continuous Drain Current (ID) :

14A

Pin Count :

3

Number of Pins :

3

Power Dissipation :

500W

JEDEC-95 Code :

TO-247AD

FET Feature :

--

Power Dissipation-Max :

500W Tc

Lead Free :

Lead Free

Threshold Voltage :

5V

Transistor Application :

SWITCHING

Drain to Source Voltage (Vdss) :

1000V

Packaging :

Tube

Polarity/Channel Type :

N-Channel

Package Shape :

RECTANGULAR

Reverse Recovery Time :

300 ns

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PSFM-T3

Minimum Operating Temperature :

- 55 C

Termination :

Through Hole

Tradename :

HiPerFET

Mounting Style :

Through Hole

Resistance :

900mOhm

JESD-609 Code :

e1

RoHS :

Details

Nominal Vgs :

5 V

Radiation Hardening :

No

Vgs(th) (Max) @ Id :

5.5V @ 4mA

Product Category :

MOSFET

Length :

16.26mm

Drain-source On Resistance-Max :

0.95 Ω

Transistor Polarity :

N-Channel

Factory Lead Time :

8 Weeks

Rise Time :

10ns

Fall Time (Typ) :

12 ns

Package :

Tube

Avalanche Energy Rating (Eas) :

2500 mJ

Drain to Source Breakdown Voltage :

1kV

Vgs (Max) :

±30V

Weight :

6g

RoHS Status :

ROHS3 Compliant

Product Type :

MOSFET

Supplier Device Package :

TO-247AD (IXFH)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Base Product Number :

IXFH14

Width :

5.3mm

Surface Mount :

No

Reach Compliance Code :

Compliant

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Additional Feature :

AVALANCHE RATED

Case Connection :

DRAIN

Terminal Position :

Single

Height :

21.46mm

Subcategory :

MOSFETs

Pulsed Drain Current-Max (IDM) :

56A

Turn-Off Delay Time :

28 ns

Terminal Form :

THROUGH-HOLE

Transistor Type :

1 N-Channel

Element Configuration :

Single

Published :

2003

Gate to Source Voltage (Vgs) :

30V

Qualification Status :

Not Qualified

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Dual Supply Voltage :

1kV

Rds On (Max) @ Id, Vgs :

950m Ω @ 7A, 10V

Transistor Element Material :

SILICON

Brand :

IXYS

Current - Continuous Drain (Id) @ 25°C :

14A Tc

Channel Mode :

Enhancement

Series :

HiPerFET™

Turn On Delay Time :

12 ns

Mounting Type :

Through Hole