IXFH14N100Q2
- Mfr.Part #
- IXFH14N100Q2
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 1000V 14A TO247AD
- Stock
- 33,505
- In Stock :
- 33,505
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Configuration :
- Single
- JESD-30 Code :
- R-PSFM-T3
- Fall Time (Typ) :
- 12 ns
- Width :
- 5.3mm
- Weight :
- 6g
- Drain to Source Breakdown Voltage :
- 1kV
- Supplier Device Package :
- TO-247AD (IXFH)
- Additional Feature :
- AVALANCHE RATED
- Termination :
- Through Hole
- Length :
- 16.26mm
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Rise Time :
- 10ns
- Brand :
- IXYS
- Power Dissipation :
- 500W
- Product Status :
- Not For New Designs
- Package :
- Tube
- Series :
- HiPerFET™
- Case Connection :
- DRAIN
- Height :
- 21.46mm
- Package / Case :
- TO-247-3
- Transistor Type :
- 1 N-Channel
- Manufacturer :
- IXYS
- Transistor Polarity :
- N-Channel
- Drain-source On Resistance-Max :
- 0.95 Ω
- Operating Temperature :
- -55°C~150°C TJ
- Avalanche Energy Rating (Eas) :
- 2500 mJ
- Radiation Hardening :
- No
- Terminal Position :
- Single
- FET Type :
- N-Channel
- Base Product Number :
- IXFH14
- Number of Pins :
- 3
- Maximum Operating Temperature :
- + 150 C
- JESD-609 Code :
- e1
- Channel Mode :
- Enhancement
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Number of Terminations :
- 3
- Published :
- 2003
- Element Configuration :
- Single
- Mounting Style :
- Through Hole
- Resistance :
- 900mOhm
- Turn-Off Delay Time :
- 28 ns
- Number of Elements :
- 1
- Drain to Source Voltage (Vdss) :
- 1000V
- Product Category :
- MOSFET
- Gate Charge (Qg) (Max) @ Vgs :
- 83nC @ 10V
- Minimum Operating Temperature :
- - 55 C
- Continuous Drain Current (ID) :
- 14A
- JEDEC-95 Code :
- TO-247AD
- Factory Lead Time :
- 8 Weeks
- Dual Supply Voltage :
- 1kV
- Tradename :
- HiPerFET
- Vgs(th) (Max) @ Id :
- 5.5V @ 4mA
- Number of Terminals :
- 3
- Reach Compliance Code :
- Compliant
- Transistor Application :
- SWITCHING
- Pulsed Drain Current-Max (IDM) :
- 56A
- FET Feature :
- --
- Pbfree Code :
- yes
- Vgs (Max) :
- ±30V
- Packaging :
- Tube
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- REACH SVHC :
- No SVHC
- Transistor Element Material :
- SILICON
- Input Capacitance (Ciss) (Max) @ Vds :
- 2800pF @ 25V
- Polarity/Channel Type :
- N-Channel
- ECCN Code :
- EAR99
- Mount :
- Through Hole
- Current - Continuous Drain (Id) @ 25°C :
- 14A Tc
- Qualification Status :
- Not Qualified
- Surface Mount :
- No
- Terminal Form :
- THROUGH-HOLE
- Package Shape :
- RECTANGULAR
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Nominal Vgs :
- 5 V
- Pin Count :
- 3
- Turn On Delay Time :
- 12 ns
- Lead Free :
- Lead Free
- Reverse Recovery Time :
- 300 ns
- Rds On (Max) @ Id, Vgs :
- 950m Ω @ 7A, 10V
- RoHS Status :
- ROHS3 Compliant
- Number of Channels :
- 1 Channel
- Mounting Type :
- Through Hole
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- DS Breakdown Voltage-Min :
- 1000 V
- Threshold Voltage :
- 5V
- Power Dissipation-Max :
- 500W Tc
- RoHS :
- Details
- Operating Mode :
- ENHANCEMENT MODE
- Product Type :
- MOSFET
- Gate to Source Voltage (Vgs) :
- 30V
- Power Dissipation (Max) :
- 500W (Tc)
- Subcategory :
- MOSFETs
- Datasheets
- IXFH14N100Q2

N-Channel Tube 950m Ω @ 7A, 10V ±30V 2800pF @ 25V 83nC @ 10V 1000V TO-247-3
IXFH14N100Q2 Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 2500 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 2800pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 14A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 1kV, and this device has a drainage-to-source breakdown voltage of 1kVV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 28 ns.Peak drain current is 56A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 12 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.In this case, the threshold voltage of the transistor is 5V, which means that it will not activate any of its functions when its threshold voltage reaches 5V.Normal operation requires that the DS breakdown voltage remain above 1000 V.For this transistor to work, a voltage 1000V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IXFH14N100Q2 Features
the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 14A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 28 ns
based on its rated peak drain current 56A.
a threshold voltage of 5V
a 1000V drain to source voltage (Vdss)
IXFH14N100Q2 Applications
There are a lot of IXYS
IXFH14N100Q2 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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