IXFH14N100

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Mfr.Part #
IXFH14N100
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 1000V 14A TO247AD
Stock
6,928
In Stock :
6,928

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Qualification Status :
Not Qualified
Reach Compliance Code :
Compliant
Manufacturer :
IXYS Corporation
Fall Time (Typ) :
30 ns
Base Product Number :
IXFH14
Current - Continuous Drain (Id) @ 25°C :
14A Tc
Gate to Source Voltage (Vgs) :
20V
Number of Pins :
3
JESD-30 Code :
R-PSFM-T3
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Drain to Source Breakdown Voltage :
1kV
Number of Terminations :
3
FET Feature :
--
Drain to Source Voltage (Vdss) :
1000V
Packaging :
Tube
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Polarity/Channel Type :
N-Channel
Additional Feature :
AVALANCHE RATED
Element Configuration :
Single
Turn-Off Delay Time :
120 ns
Transistor Element Material :
SILICON
Product Status :
Obsolete
Case Connection :
DRAIN
RoHS Status :
RoHS Compliant
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
JEDEC-95 Code :
TO-247
Number of Terminals :
3
Surface Mount :
No
Mounting Type :
Through Hole
DS Breakdown Voltage-Min :
1000 V
Pbfree Code :
yes
Rise Time :
30ns
Drain-source On Resistance-Max :
0.75Ohm
Terminal Form :
THROUGH-HOLE
Input Capacitance (Ciss) (Max) @ Vds :
4500pF @ 25V
FET Type :
N-Channel
Package Shape :
RECTANGULAR
Mount :
Through Hole
Terminal Position :
Single
Power Dissipation (Max) :
360W (Tc)
Number of Elements :
1
Rds On (Max) @ Id, Vgs :
750m Ω @ 500mA, 10V
Operating Temperature :
-55°C~150°C TJ
Operating Mode :
ENHANCEMENT MODE
Gate Charge (Qg) (Max) @ Vgs :
220nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) :
10V
Transistor Application :
SWITCHING
Pulsed Drain Current-Max (IDM) :
56A
Configuration :
SINGLE WITH BUILT-IN DIODE
Vgs (Max) :
±20V
Drain Current-Max (Abs) (ID) :
14 A
Supplier Device Package :
TO-247AD (IXFH)
Published :
2000
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Pin Count :
3
Package :
Tube
Series :
HiPerFET™
Package / Case :
TO-247-3
Power Dissipation-Max :
360W Tc
Vgs(th) (Max) @ Id :
4.5V @ 4mA
Continuous Drain Current (ID) :
14A
Power Dissipation-Max (Abs) :
360 W
Power Dissipation :
360W
Datasheets
IXFH14N100
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFH14N100 from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Number of Terminations:3, Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-247-3, IXFH14N100 pinout, IXFH14N100 datasheet PDF, IXFH14N100 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFH14N100 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFH14N100


N-Channel Tube 750m Ω @ 500mA, 10V ±20V 4500pF @ 25V 220nC @ 10V 1000V TO-247-3

IXFH14N100 Overview


The maximum input capacitance of this device is 4500pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 14A.When VGS=1kV, and ID flows to VDS at 1kVVDS, the drain-source breakdown voltage is 1kV in this device.As shown in the table below, the drain current of this device is 14 A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 120 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 56A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 1000 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 1000V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

IXFH14N100 Features


a continuous drain current (ID) of 14A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 120 ns
based on its rated peak drain current 56A.
a 1000V drain to source voltage (Vdss)


IXFH14N100 Applications


There are a lot of IXYS
IXFH14N100 applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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