IXFH140N10P

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Mfr.Part #
IXFH140N10P
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 100V 140A TO247AD
Stock
5,679
In Stock :
5,679

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Mount :
Through Hole
Terminal Position :
Single
Product Category :
MOSFET
Transistor Application :
SWITCHING
Qualification Status :
Not Qualified
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Vgs (Max) :
±20V
Maximum Operating Temperature :
+ 175 C
Resistance :
11mOhm
Current - Continuous Drain (Id) @ 25°C :
140A Tc
Avalanche Energy Rating (Eas) :
2500 mJ
Vgs(th) (Max) @ Id :
5V @ 4mA
Supplier Device Package :
TO-247AD (IXFH)
Operating Mode :
ENHANCEMENT MODE
RoHS Status :
ROHS3 Compliant
Type :
PolarHV HiPerFET Power MOSFET
Operating Temperature :
-55°C~175°C TJ
Base Product Number :
IXFH140
Package :
Tube
Subcategory :
MOSFETs
Terminal Form :
THROUGH-HOLE
Channel Mode :
Enhancement
Width :
5.3 mm
Drain-source On Resistance-Max :
0.011 Ω
Number of Terminations :
3
Number of Channels :
1 Channel
Drain to Source Voltage (Vdss) :
100V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Brand :
IXYS
Tradename :
HiPerFET
Number of Terminals :
3
Rise Time :
50ns
Pulsed Drain Current-Max (IDM) :
300A
Polarity/Channel Type :
N-Channel
Drain to Source Breakdown Voltage :
100V
Transistor Element Material :
SILICON
Surface Mount :
No
Package Shape :
RECTANGULAR
Transistor Type :
1 N-Channel
Height :
21.46 mm
Input Capacitance (Ciss) (Max) @ Vds :
4700pF @ 25V
Pin Count :
3
JEDEC-95 Code :
TO-247AD
Package / Case :
TO-247-3
Gate to Source Voltage (Vgs) :
20V
Radiation Hardening :
No
Number of Elements :
1
Drive Voltage (Max Rds On,Min Rds On) :
10V
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Minimum Operating Temperature :
- 55 C
Packaging :
Tube
JESD-609 Code :
e1
ECCN Code :
EAR99
Continuous Drain Current (ID) :
140A
Case Connection :
DRAIN
Pbfree Code :
yes
Published :
2006
JESD-30 Code :
R-PSFM-T3
Gate Charge (Qg) (Max) @ Vgs :
155nC @ 10V
Power Dissipation (Max) :
600W (Tc)
Element Configuration :
Single
RoHS :
Details
Rds On (Max) @ Id, Vgs :
11m Ω @ 70A, 10V
Transistor Polarity :
N-Channel
Power Dissipation-Max :
600W Tc
Product Type :
MOSFET
Turn-Off Delay Time :
85 ns
Length :
16.26 mm
Product Status :
Active
Series :
HiPerFET™, PolarHT™
Additional Feature :
AVALANCHE RATED
Configuration :
Single
FET Type :
N-Channel
FET Feature :
--
Power Dissipation :
600W
Fall Time (Typ) :
26 ns
Factory Lead Time :
30 Weeks
DS Breakdown Voltage-Min :
100 V
Lead Free :
Lead Free
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Manufacturer :
IXYS
Reach Compliance Code :
Compliant
Mounting Type :
Through Hole
Mounting Style :
Through Hole
Datasheets
IXFH140N10P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFH140N10P from Chip IC,where excellence meets affordability. This product stands out with its Type:PolarHV HiPerFET Power MOSFET, Operating Temperature:-55°C~175°C TJ, Number of Terminations:3, Number of Channels:1 Channel, Package / Case:TO-247-3, Mounting Type:Through Hole, IXFH140N10P pinout, IXFH140N10P datasheet PDF, IXFH140N10P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFH140N10P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFH140N10P


N-Channel Tube 11m Ω @ 70A, 10V ±20V 4700pF @ 25V 155nC @ 10V 100V TO-247-3

IXFH140N10P Overview


This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 2500 mJ.The maximum input capacitance of this device is 4700pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 140A.When VGS=100V, and ID flows to VDS at 100VVDS, the drain-source breakdown voltage is 100V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 85 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 300A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 100 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 100V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

IXFH140N10P Features


the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 140A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 85 ns
based on its rated peak drain current 300A.
a 100V drain to source voltage (Vdss)


IXFH140N10P Applications


There are a lot of IXYS
IXFH140N10P applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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