IXFH140N10P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

ECCN Code :

EAR99

Drain-source On Resistance-Max :

0.011 Ω

Drain to Source Voltage (Vdss) :

100V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain to Source Breakdown Voltage :

100V

RoHS Status :

ROHS3 Compliant

Base Product Number :

IXFH140

FET Feature :

--

Reach Compliance Code :

Compliant

Maximum Operating Temperature :

+ 175 C

Vgs (Max) :

±20V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Input Capacitance (Ciss) (Max) @ Vds :

4700pF @ 25V

FET Type :

N-Channel

Minimum Operating Temperature :

- 55 C

Operating Temperature :

-55°C~175°C TJ

Type :

PolarHV HiPerFET Power MOSFET

Transistor Element Material :

SILICON

Additional Feature :

AVALANCHE RATED

Product Category :

MOSFET

RoHS :

Details

Series :

HiPerFET™, PolarHT™

Polarity/Channel Type :

N-Channel

Length :

16.26 mm

Terminal Form :

THROUGH-HOLE

Number of Terminals :

3

Transistor Application :

SWITCHING

Element Configuration :

Single

Package :

Tube

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

140A Tc

Terminal Position :

Single

Power Dissipation :

600W

Supplier Device Package :

TO-247AD (IXFH)

JEDEC-95 Code :

TO-247AD

Number of Terminations :

3

Width :

5.3 mm

Height :

21.46 mm

Mount :

Through Hole

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Gate Charge (Qg) (Max) @ Vgs :

155nC @ 10V

Operating Mode :

ENHANCEMENT MODE

Brand :

IXYS

Pin Count :

3

Surface Mount :

No

Number of Channels :

1 Channel

Power Dissipation-Max :

600W Tc

Mounting Type :

Through Hole

Tradename :

HiPerFET

Resistance :

11mOhm

Product Status :

Active

Pulsed Drain Current-Max (IDM) :

300A

Subcategory :

MOSFETs

Radiation Hardening :

No

Power Dissipation (Max) :

600W (Tc)

Lead Free :

Lead Free

Channel Mode :

Enhancement

Transistor Polarity :

N-Channel

Turn-Off Delay Time :

85 ns

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Qualification Status :

Not Qualified

Case Connection :

DRAIN

Rds On (Max) @ Id, Vgs :

11m Ω @ 70A, 10V

Factory Lead Time :

30 Weeks

DS Breakdown Voltage-Min :

100 V

Continuous Drain Current (ID) :

140A

Package Shape :

RECTANGULAR

Mounting Style :

Through Hole

Configuration :

Single

Rise Time :

50ns

JESD-609 Code :

e1

Vgs(th) (Max) @ Id :

5V @ 4mA

Package / Case :

TO-247-3

Gate to Source Voltage (Vgs) :

20V

Published :

2006

Pbfree Code :

yes

JESD-30 Code :

R-PSFM-T3

Manufacturer :

IXYS

Fall Time (Typ) :

26 ns

Transistor Type :

1 N-Channel

Product Type :

MOSFET

Avalanche Energy Rating (Eas) :

2500 mJ

Packaging :

Tube