IXFH140N10P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation :

600W

Radiation Hardening :

No

Supplier Device Package :

TO-247AD (IXFH)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

85 ns

FET Feature :

--

Vgs (Max) :

±20V

Resistance :

11mOhm

Rise Time :

50ns

Power Dissipation-Max :

600W Tc

Brand :

IXYS

Surface Mount :

No

RoHS Status :

ROHS3 Compliant

Pulsed Drain Current-Max (IDM) :

300A

Factory Lead Time :

30 Weeks

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Maximum Operating Temperature :

+ 175 C

Rds On (Max) @ Id, Vgs :

11m Ω @ 70A, 10V

Qualification Status :

Not Qualified

JESD-30 Code :

R-PSFM-T3

ECCN Code :

EAR99

Gate to Source Voltage (Vgs) :

20V

JEDEC-95 Code :

TO-247AD

DS Breakdown Voltage-Min :

100 V

Base Product Number :

IXFH140

Drain to Source Voltage (Vdss) :

100V

Additional Feature :

AVALANCHE RATED

Terminal Form :

THROUGH-HOLE

Fall Time (Typ) :

26 ns

Product Type :

MOSFET

Power Dissipation (Max) :

600W (Tc)

Number of Elements :

1

Tradename :

HiPerFET

Packaging :

Tube

Pin Count :

3

Configuration :

Single

Drain to Source Breakdown Voltage :

100V

Current - Continuous Drain (Id) @ 25°C :

140A Tc

Continuous Drain Current (ID) :

140A

Product Category :

MOSFET

Mounting Style :

Through Hole

Avalanche Energy Rating (Eas) :

2500 mJ

Package / Case :

TO-247-3

RoHS :

Details

Vgs(th) (Max) @ Id :

5V @ 4mA

Type :

PolarHV HiPerFET Power MOSFET

Case Connection :

DRAIN

Polarity/Channel Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

4700pF @ 25V

Number of Terminations :

3

FET Type :

N-Channel

Channel Mode :

Enhancement

Published :

2006

Number of Terminals :

3

Length :

16.26 mm

Mounting Type :

Through Hole

Width :

5.3 mm

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Subcategory :

MOSFETs

Transistor Type :

1 N-Channel

Transistor Polarity :

N-Channel

Number of Channels :

1 Channel

Operating Temperature :

-55°C~175°C TJ

Package Shape :

RECTANGULAR

Manufacturer :

IXYS

Series :

HiPerFET™, PolarHT™

FET Technology :

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code :

e1

Drain-source On Resistance-Max :

0.011 Ω

Gate Charge (Qg) (Max) @ Vgs :

155nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Lead Free :

Lead Free

Terminal Position :

Single

Package :

Tube

Reach Compliance Code :

Compliant

Element Configuration :

Single

Height :

21.46 mm

Mount :

Through Hole

Minimum Operating Temperature :

- 55 C

Transistor Application :

SWITCHING

Product Status :

Active

Pbfree Code :

yes