IXFH140N10P
- Mfr.Part #
- IXFH140N10P
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 140A TO247AD
- Stock
- 5,679
- In Stock :
- 5,679
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mount :
- Through Hole
- Terminal Position :
- Single
- Product Category :
- MOSFET
- Transistor Application :
- SWITCHING
- Qualification Status :
- Not Qualified
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Vgs (Max) :
- ±20V
- Maximum Operating Temperature :
- + 175 C
- Resistance :
- 11mOhm
- Current - Continuous Drain (Id) @ 25°C :
- 140A Tc
- Avalanche Energy Rating (Eas) :
- 2500 mJ
- Vgs(th) (Max) @ Id :
- 5V @ 4mA
- Supplier Device Package :
- TO-247AD (IXFH)
- Operating Mode :
- ENHANCEMENT MODE
- RoHS Status :
- ROHS3 Compliant
- Type :
- PolarHV HiPerFET Power MOSFET
- Operating Temperature :
- -55°C~175°C TJ
- Base Product Number :
- IXFH140
- Package :
- Tube
- Subcategory :
- MOSFETs
- Terminal Form :
- THROUGH-HOLE
- Channel Mode :
- Enhancement
- Width :
- 5.3 mm
- Drain-source On Resistance-Max :
- 0.011 Ω
- Number of Terminations :
- 3
- Number of Channels :
- 1 Channel
- Drain to Source Voltage (Vdss) :
- 100V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Brand :
- IXYS
- Tradename :
- HiPerFET
- Number of Terminals :
- 3
- Rise Time :
- 50ns
- Pulsed Drain Current-Max (IDM) :
- 300A
- Polarity/Channel Type :
- N-Channel
- Drain to Source Breakdown Voltage :
- 100V
- Transistor Element Material :
- SILICON
- Surface Mount :
- No
- Package Shape :
- RECTANGULAR
- Transistor Type :
- 1 N-Channel
- Height :
- 21.46 mm
- Input Capacitance (Ciss) (Max) @ Vds :
- 4700pF @ 25V
- Pin Count :
- 3
- JEDEC-95 Code :
- TO-247AD
- Package / Case :
- TO-247-3
- Gate to Source Voltage (Vgs) :
- 20V
- Radiation Hardening :
- No
- Number of Elements :
- 1
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Minimum Operating Temperature :
- - 55 C
- Packaging :
- Tube
- JESD-609 Code :
- e1
- ECCN Code :
- EAR99
- Continuous Drain Current (ID) :
- 140A
- Case Connection :
- DRAIN
- Pbfree Code :
- yes
- Published :
- 2006
- JESD-30 Code :
- R-PSFM-T3
- Gate Charge (Qg) (Max) @ Vgs :
- 155nC @ 10V
- Power Dissipation (Max) :
- 600W (Tc)
- Element Configuration :
- Single
- RoHS :
- Details
- Rds On (Max) @ Id, Vgs :
- 11m Ω @ 70A, 10V
- Transistor Polarity :
- N-Channel
- Power Dissipation-Max :
- 600W Tc
- Product Type :
- MOSFET
- Turn-Off Delay Time :
- 85 ns
- Length :
- 16.26 mm
- Product Status :
- Active
- Series :
- HiPerFET™, PolarHT™
- Additional Feature :
- AVALANCHE RATED
- Configuration :
- Single
- FET Type :
- N-Channel
- FET Feature :
- --
- Power Dissipation :
- 600W
- Fall Time (Typ) :
- 26 ns
- Factory Lead Time :
- 30 Weeks
- DS Breakdown Voltage-Min :
- 100 V
- Lead Free :
- Lead Free
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Manufacturer :
- IXYS
- Reach Compliance Code :
- Compliant
- Mounting Type :
- Through Hole
- Mounting Style :
- Through Hole
- Datasheets
- IXFH140N10P

N-Channel Tube 11m Ω @ 70A, 10V ±20V 4700pF @ 25V 155nC @ 10V 100V TO-247-3
IXFH140N10P Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 2500 mJ.The maximum input capacitance of this device is 4700pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 140A.When VGS=100V, and ID flows to VDS at 100VVDS, the drain-source breakdown voltage is 100V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 85 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 300A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 100 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 100V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
IXFH140N10P Features
the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 140A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 85 ns
based on its rated peak drain current 300A.
a 100V drain to source voltage (Vdss)
IXFH140N10P Applications
There are a lot of IXYS
IXFH140N10P applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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