IXFH13N90

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Channel Mode :

Enhancement

Operating Temperature :

-55°C~150°C TJ

Power Dissipation-Max :

300W Tc

JESD-30 Code :

R-PSFM-T3

Transistor Element Material :

SILICON

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Min Operating Temperature :

-55 °C

Product Category :

MOSFET

Base Product Number :

IXFH13

Rds On (Max) @ Id, Vgs :

800m Ω @ 500mA, 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Terminations :

3

Rise Time :

12ns

Product Type :

MOSFET

Tradename :

HyperFET

Max Operating Temperature :

150 °C

FET Type :

N-Channel

DS Breakdown Voltage-Min :

900 V

Mounting Style :

Through Hole

Height :

21.46 mm

Pulsed Drain Current-Max (IDM) :

52A

Package :

Tube

Power Dissipation-Max (Abs) :

300 W

Manufacturer :

IXYS

Element Configuration :

Single

Product Status :

Obsolete

JEDEC-95 Code :

TO-247AD

FET Technology :

METAL-OXIDE SEMICONDUCTOR

RoHS :

Details

Transistor Polarity :

N-Channel

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

155nC @ 10V

Qualification Status :

Not Qualified

Pin Count :

3

Brand :

IXYS

Drain-source On Resistance-Max :

0.8Ohm

Additional Feature :

AVALANCHE RATED

Maximum Operating Temperature :

+ 150 C

Number of Channels :

1 Channel

Vgs (Max) :

±20V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Application :

SWITCHING

Supplier Device Package :

TO-247AD (IXFH)

Case Connection :

DRAIN

Mounting Type :

Through Hole

Packaging :

Tube

Surface Mount :

No

Minimum Operating Temperature :

- 55 C

RoHS Status :

ROHS3 Compliant

Terminal Position :

Single

Configuration :

Single

Published :

2003

Gate to Source Voltage (Vgs) :

20V

Power Dissipation :

300W

Package Shape :

RECTANGULAR

Power Dissipation (Max) :

300W (Tc)

Continuous Drain Current (ID) :

13A

Length :

16.26 mm

Current - Continuous Drain (Id) @ 25°C :

13A Tc

Vgs(th) (Max) @ Id :

4.5V @ 4mA

Transistor Type :

1 N-Channel

Rds On Max :

800 mΩ

Mount :

Through Hole

Input Capacitance :

4.2 nF

Drain Current-Max (Abs) (ID) :

13 A

Terminal Form :

THROUGH-HOLE

Input Capacitance (Ciss) (Max) @ Vds :

4200pF @ 25V

Number of Terminals :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Polarity/Channel Type :

N-Channel

Drain to Source Resistance :

800 mΩ

FET Feature :

--

Width :

5.3 mm

Number of Pins :

3

Reach Compliance Code :

Compliant

Drain to Source Breakdown Voltage :

900V

Series :

HiPerFET™

Turn-Off Delay Time :

51 ns

Package / Case :

TO-247-3

Pbfree Code :

yes

Fall Time (Typ) :

18 ns

Drain to Source Voltage (Vdss) :

900V

Max Power Dissipation :

300 W