IXFH13N90
- Mfr.Part #
- IXFH13N90
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 900V 13A TO247AD
- Stock
- 20,157
- In Stock :
- 20,157
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- FET Type :
- N-Channel
- Surface Mount :
- No
- Product Type :
- MOSFET
- Brand :
- IXYS
- Max Power Dissipation :
- 300 W
- Vgs(th) (Max) @ Id :
- 4.5V @ 4mA
- Pin Count :
- 3
- DS Breakdown Voltage-Min :
- 900 V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Minimum Operating Temperature :
- - 55 C
- Product Category :
- MOSFET
- Turn-Off Delay Time :
- 51 ns
- Current - Continuous Drain (Id) @ 25°C :
- 13A Tc
- Configuration :
- Single
- Published :
- 2003
- JEDEC-95 Code :
- TO-247AD
- Number of Terminals :
- 3
- Length :
- 16.26 mm
- Manufacturer :
- IXYS
- Terminal Form :
- THROUGH-HOLE
- Rds On Max :
- 800 mΩ
- Input Capacitance :
- 4.2 nF
- Power Dissipation-Max (Abs) :
- 300 W
- Height :
- 21.46 mm
- Additional Feature :
- AVALANCHE RATED
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- JESD-30 Code :
- R-PSFM-T3
- Power Dissipation (Max) :
- 300W (Tc)
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Drain to Source Resistance :
- 800 mΩ
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Application :
- SWITCHING
- Pbfree Code :
- yes
- Gate Charge (Qg) (Max) @ Vgs :
- 155nC @ 10V
- Rds On (Max) @ Id, Vgs :
- 800m Ω @ 500mA, 10V
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Type :
- 1 N-Channel
- Pulsed Drain Current-Max (IDM) :
- 52A
- Element Configuration :
- Single
- FET Feature :
- --
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Transistor Polarity :
- N-Channel
- Number of Channels :
- 1 Channel
- Power Dissipation-Max :
- 300W Tc
- Transistor Element Material :
- SILICON
- Terminal Position :
- Single
- Min Operating Temperature :
- -55 °C
- Supplier Device Package :
- TO-247AD (IXFH)
- Continuous Drain Current (ID) :
- 13A
- Qualification Status :
- Not Qualified
- Max Operating Temperature :
- 150 °C
- Vgs (Max) :
- ±20V
- Power Dissipation :
- 300W
- Mounting Type :
- Through Hole
- Product Status :
- Obsolete
- Width :
- 5.3 mm
- Polarity/Channel Type :
- N-Channel
- Mount :
- Through Hole
- Maximum Operating Temperature :
- + 150 C
- Reach Compliance Code :
- Compliant
- Case Connection :
- DRAIN
- Channel Mode :
- Enhancement
- Drain-source On Resistance-Max :
- 0.8Ohm
- Fall Time (Typ) :
- 18 ns
- Base Product Number :
- IXFH13
- Packaging :
- Tube
- Package :
- Tube
- Drain to Source Breakdown Voltage :
- 900V
- Series :
- HiPerFET™
- Input Capacitance (Ciss) (Max) @ Vds :
- 4200pF @ 25V
- Number of Pins :
- 3
- Package / Case :
- TO-247-3
- Number of Terminations :
- 3
- RoHS :
- Details
- Drain to Source Voltage (Vdss) :
- 900V
- Gate to Source Voltage (Vgs) :
- 20V
- Rise Time :
- 12ns
- Package Shape :
- RECTANGULAR
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Mounting Style :
- Through Hole
- Drain Current-Max (Abs) (ID) :
- 13 A
- Tradename :
- HyperFET
- Datasheets
- IXFH13N90

N-Channel Tube 800m Ω @ 500mA, 10V ±20V 4200pF @ 25V 155nC @ 10V 900V TO-247-3
IXFH13N90 Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 4200pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 13A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 900V, and this device has a drainage-to-source breakdown voltage of 900VV.Drain current refers to the maximum continuous current a device can conduct, and it is 13 A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 51 ns.Peak drain current is 52A, which is the maximum pulsed drain current.This device has a drain-to-source resistance of 800 mΩ when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Normal operation requires that the DS breakdown voltage remain above 900 V.For this transistor to work, a voltage 900V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IXFH13N90 Features
a continuous drain current (ID) of 13A
a drain-to-source breakdown voltage of 900V voltage
the turn-off delay time is 51 ns
based on its rated peak drain current 52A.
single MOSFETs transistor is 800 mΩ
a 900V drain to source voltage (Vdss)
IXFH13N90 Applications
There are a lot of IXYS
IXFH13N90 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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