IXFH13N90

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Mfr.Part #
IXFH13N90
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 900V 13A TO247AD
Stock
20,157
In Stock :
20,157

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Number of Elements :
1
RoHS Status :
ROHS3 Compliant
FET Type :
N-Channel
Surface Mount :
No
Product Type :
MOSFET
Brand :
IXYS
Max Power Dissipation :
300 W
Vgs(th) (Max) @ Id :
4.5V @ 4mA
Pin Count :
3
DS Breakdown Voltage-Min :
900 V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Minimum Operating Temperature :
- 55 C
Product Category :
MOSFET
Turn-Off Delay Time :
51 ns
Current - Continuous Drain (Id) @ 25°C :
13A Tc
Configuration :
Single
Published :
2003
JEDEC-95 Code :
TO-247AD
Number of Terminals :
3
Length :
16.26 mm
Manufacturer :
IXYS
Terminal Form :
THROUGH-HOLE
Rds On Max :
800 mΩ
Input Capacitance :
4.2 nF
Power Dissipation-Max (Abs) :
300 W
Height :
21.46 mm
Additional Feature :
AVALANCHE RATED
Drive Voltage (Max Rds On,Min Rds On) :
10V
JESD-30 Code :
R-PSFM-T3
Power Dissipation (Max) :
300W (Tc)
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Drain to Source Resistance :
800 mΩ
Operating Temperature :
-55°C~150°C TJ
Transistor Application :
SWITCHING
Pbfree Code :
yes
Gate Charge (Qg) (Max) @ Vgs :
155nC @ 10V
Rds On (Max) @ Id, Vgs :
800m Ω @ 500mA, 10V
Operating Mode :
ENHANCEMENT MODE
Transistor Type :
1 N-Channel
Pulsed Drain Current-Max (IDM) :
52A
Element Configuration :
Single
FET Feature :
--
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Transistor Polarity :
N-Channel
Number of Channels :
1 Channel
Power Dissipation-Max :
300W Tc
Transistor Element Material :
SILICON
Terminal Position :
Single
Min Operating Temperature :
-55 °C
Supplier Device Package :
TO-247AD (IXFH)
Continuous Drain Current (ID) :
13A
Qualification Status :
Not Qualified
Max Operating Temperature :
150 °C
Vgs (Max) :
±20V
Power Dissipation :
300W
Mounting Type :
Through Hole
Product Status :
Obsolete
Width :
5.3 mm
Polarity/Channel Type :
N-Channel
Mount :
Through Hole
Maximum Operating Temperature :
+ 150 C
Reach Compliance Code :
Compliant
Case Connection :
DRAIN
Channel Mode :
Enhancement
Drain-source On Resistance-Max :
0.8Ohm
Fall Time (Typ) :
18 ns
Base Product Number :
IXFH13
Packaging :
Tube
Package :
Tube
Drain to Source Breakdown Voltage :
900V
Series :
HiPerFET™
Input Capacitance (Ciss) (Max) @ Vds :
4200pF @ 25V
Number of Pins :
3
Package / Case :
TO-247-3
Number of Terminations :
3
RoHS :
Details
Drain to Source Voltage (Vdss) :
900V
Gate to Source Voltage (Vgs) :
20V
Rise Time :
12ns
Package Shape :
RECTANGULAR
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Mounting Style :
Through Hole
Drain Current-Max (Abs) (ID) :
13 A
Tradename :
HyperFET
Datasheets
IXFH13N90
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFH13N90 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Number of Channels:1 Channel, Mounting Type:Through Hole, Number of Pins:3, Package / Case:TO-247-3, Number of Terminations:3, IXFH13N90 pinout, IXFH13N90 datasheet PDF, IXFH13N90 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFH13N90 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFH13N90


N-Channel Tube 800m Ω @ 500mA, 10V ±20V 4200pF @ 25V 155nC @ 10V 900V TO-247-3

IXFH13N90 Overview


An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 4200pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 13A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 900V, and this device has a drainage-to-source breakdown voltage of 900VV.Drain current refers to the maximum continuous current a device can conduct, and it is 13 A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 51 ns.Peak drain current is 52A, which is the maximum pulsed drain current.This device has a drain-to-source resistance of 800 mΩ when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Normal operation requires that the DS breakdown voltage remain above 900 V.For this transistor to work, a voltage 900V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

IXFH13N90 Features


a continuous drain current (ID) of 13A
a drain-to-source breakdown voltage of 900V voltage
the turn-off delay time is 51 ns
based on its rated peak drain current 52A.
single MOSFETs transistor is 800 mΩ
a 900V drain to source voltage (Vdss)


IXFH13N90 Applications


There are a lot of IXYS
IXFH13N90 applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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