IXFH13N80Q

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Mfr.Part #
IXFH13N80Q
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 800V 13A TO247AD
Stock
1
In Stock :
1

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Surface Mount :
No
Current - Continuous Drain (Id) @ 25°C :
13A Tc
Drive Voltage (Max Rds On,Min Rds On) :
10V
Case Connection :
DRAIN
Pbfree Code :
yes
Product Category :
MOSFET
Number of Channels :
1 Channel
JESD-30 Code :
R-PSFM-T3
Drain to Source Breakdown Voltage :
800V
FET Feature :
--
Additional Feature :
AVALANCHE RATED
Rds On (Max) @ Id, Vgs :
700m Ω @ 6.5A, 10V
Transistor Element Material :
SILICON
Supplier Device Package :
TO-247AD (IXFH)
Input Capacitance (Ciss) (Max) @ Vds :
3250pF @ 25V
Fall Time (Typ) :
19 ns
Maximum Operating Temperature :
+ 150 C
Drain-source On Resistance-Max :
0.8Ohm
Number of Elements :
1
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Pins :
3
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Transistor Polarity :
N-Channel
Avalanche Energy Rating (Eas) :
750 mJ
Drain Current-Max (Abs) (ID) :
13 A
Product Type :
MOSFET
Vgs(th) (Max) @ Id :
4.5V @ 4mA
Height :
21.46 mm
Operating Mode :
ENHANCEMENT MODE
Polarity/Channel Type :
N-Channel
Terminal Position :
Single
Transistor Type :
1 N-Channel
Manufacturer :
IXYS
Transistor Application :
SWITCHING
Length :
16.26 mm
Mount :
Through Hole
Package / Case :
TO-247-3
Power Dissipation (Max) :
250W (Tc)
Power Dissipation-Max (Abs) :
250 W
Reach Compliance Code :
Compliant
Published :
2000
Package Shape :
RECTANGULAR
Power Dissipation :
250W
DS Breakdown Voltage-Min :
800 V
Gate to Source Voltage (Vgs) :
20V
FET Type :
N-Channel
Width :
5.3 mm
Vgs (Max) :
±20V
Product Status :
Obsolete
RoHS :
Details
Configuration :
Single
Drain to Source Voltage (Vdss) :
800V
JEDEC-95 Code :
TO-247
Package :
Tube
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Mounting Type :
Through Hole
Terminal Form :
THROUGH-HOLE
Continuous Drain Current (ID) :
13A
Operating Temperature :
-55°C~150°C TJ
Packaging :
Tube
Pin Count :
3
Pulsed Drain Current-Max (IDM) :
52A
Number of Terminals :
3
Rise Time :
36ns
Series :
HiPerFET™
Number of Terminations :
3
Tradename :
HyperFET
Channel Mode :
Enhancement
Base Product Number :
IXFH13
Gate Charge (Qg) (Max) @ Vgs :
90nC @ 10V
Element Configuration :
Single
Qualification Status :
Not Qualified
RoHS Status :
RoHS Compliant
Mounting Style :
Through Hole
Power Dissipation-Max :
250W Tc
Minimum Operating Temperature :
- 55 C
Brand :
IXYS
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Turn-Off Delay Time :
55 ns
Datasheets
IXFH13N80Q
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFH13N80Q from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1 Channel, Number of Pins:3, Package / Case:TO-247-3, Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, IXFH13N80Q pinout, IXFH13N80Q datasheet PDF, IXFH13N80Q amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFH13N80Q ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFH13N80Q


N-Channel Tube 700m Ω @ 6.5A, 10V ±20V 3250pF @ 25V 90nC @ 10V 800V TO-247-3

IXFH13N80Q Overview


There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 750 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 3250pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 13A amps.In this device, the drain-source breakdown voltage is 800V and VGS=800V, so the drain-source breakdown voltage is 800V in this case.A device can conduct a maximum continuous current of [13 A] according to its drain current.It is [55 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 52A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.The DS breakdown voltage should be maintained above 800 V to maintain normal operation.To operate this transistor, you will need a 800V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).

IXFH13N80Q Features


the avalanche energy rating (Eas) is 750 mJ
a continuous drain current (ID) of 13A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 55 ns
based on its rated peak drain current 52A.
a 800V drain to source voltage (Vdss)


IXFH13N80Q Applications


There are a lot of IXYS
IXFH13N80Q applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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