IXFH13N80Q
- Mfr.Part #
- IXFH13N80Q
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 800V 13A TO247AD
- Stock
- 1
- In Stock :
- 1
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Polarity :
- N-Channel
- Product Status :
- Obsolete
- Operating Temperature :
- -55°C~150°C TJ
- Qualification Status :
- Not Qualified
- RoHS :
- Details
- Input Capacitance (Ciss) (Max) @ Vds :
- 3250pF @ 25V
- Number of Elements :
- 1
- Mount :
- Through Hole
- Terminal Form :
- THROUGH-HOLE
- Package Shape :
- RECTANGULAR
- Published :
- 2000
- Case Connection :
- DRAIN
- Power Dissipation :
- 250W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate Charge (Qg) (Max) @ Vgs :
- 90nC @ 10V
- Rise Time :
- 36ns
- Number of Terminations :
- 3
- Terminal Position :
- Single
- FET Feature :
- --
- Drain-source On Resistance-Max :
- 0.8Ohm
- Packaging :
- Tube
- Surface Mount :
- No
- RoHS Status :
- RoHS Compliant
- Pin Count :
- 3
- Power Dissipation (Max) :
- 250W (Tc)
- Transistor Element Material :
- SILICON
- Transistor Type :
- 1 N-Channel
- Avalanche Energy Rating (Eas) :
- 750 mJ
- Transistor Application :
- SWITCHING
- Additional Feature :
- AVALANCHE RATED
- Supplier Device Package :
- TO-247AD (IXFH)
- Mounting Style :
- Through Hole
- Tradename :
- HyperFET
- Drain to Source Voltage (Vdss) :
- 800V
- Continuous Drain Current (ID) :
- 13A
- Power Dissipation-Max (Abs) :
- 250 W
- Fall Time (Typ) :
- 19 ns
- Turn-Off Delay Time :
- 55 ns
- Maximum Operating Temperature :
- + 150 C
- Polarity/Channel Type :
- N-Channel
- Minimum Operating Temperature :
- - 55 C
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Current - Continuous Drain (Id) @ 25°C :
- 13A Tc
- Channel Mode :
- Enhancement
- Series :
- HiPerFET™
- Base Product Number :
- IXFH13
- Power Dissipation-Max :
- 250W Tc
- Mounting Type :
- Through Hole
- Manufacturer :
- IXYS
- Number of Channels :
- 1 Channel
- Vgs(th) (Max) @ Id :
- 4.5V @ 4mA
- Brand :
- IXYS
- Product Category :
- MOSFET
- Configuration :
- Single
- DS Breakdown Voltage-Min :
- 800 V
- Width :
- 5.3 mm
- Rds On (Max) @ Id, Vgs :
- 700m Ω @ 6.5A, 10V
- Length :
- 16.26 mm
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Number of Pins :
- 3
- Element Configuration :
- Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Gate to Source Voltage (Vgs) :
- 20V
- Vgs (Max) :
- ±20V
- Package :
- Tube
- JESD-30 Code :
- R-PSFM-T3
- Package / Case :
- TO-247-3
- Reach Compliance Code :
- Compliant
- FET Type :
- N-Channel
- Product Type :
- MOSFET
- Number of Terminals :
- 3
- JEDEC-95 Code :
- TO-247
- Pbfree Code :
- yes
- Drain Current-Max (Abs) (ID) :
- 13 A
- Height :
- 21.46 mm
- Pulsed Drain Current-Max (IDM) :
- 52A
- Operating Mode :
- ENHANCEMENT MODE
- Drain to Source Breakdown Voltage :
- 800V
- Datasheets
- IXFH13N80Q

N-Channel Tube 700m Ω @ 6.5A, 10V ±20V 3250pF @ 25V 90nC @ 10V 800V TO-247-3
IXFH13N80Q Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 750 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 3250pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 13A amps.In this device, the drain-source breakdown voltage is 800V and VGS=800V, so the drain-source breakdown voltage is 800V in this case.A device can conduct a maximum continuous current of [13 A] according to its drain current.It is [55 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 52A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.The DS breakdown voltage should be maintained above 800 V to maintain normal operation.To operate this transistor, you will need a 800V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
IXFH13N80Q Features
the avalanche energy rating (Eas) is 750 mJ
a continuous drain current (ID) of 13A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 55 ns
based on its rated peak drain current 52A.
a 800V drain to source voltage (Vdss)
IXFH13N80Q Applications
There are a lot of IXYS
IXFH13N80Q applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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