IXFH13N80Q
- Mfr.Part #
- IXFH13N80Q
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 800V 13A TO247AD
- Stock
- 1
- In Stock :
- 1
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Surface Mount :
- No
- Current - Continuous Drain (Id) @ 25°C :
- 13A Tc
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Case Connection :
- DRAIN
- Pbfree Code :
- yes
- Product Category :
- MOSFET
- Number of Channels :
- 1 Channel
- JESD-30 Code :
- R-PSFM-T3
- Drain to Source Breakdown Voltage :
- 800V
- FET Feature :
- --
- Additional Feature :
- AVALANCHE RATED
- Rds On (Max) @ Id, Vgs :
- 700m Ω @ 6.5A, 10V
- Transistor Element Material :
- SILICON
- Supplier Device Package :
- TO-247AD (IXFH)
- Input Capacitance (Ciss) (Max) @ Vds :
- 3250pF @ 25V
- Fall Time (Typ) :
- 19 ns
- Maximum Operating Temperature :
- + 150 C
- Drain-source On Resistance-Max :
- 0.8Ohm
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 3
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Transistor Polarity :
- N-Channel
- Avalanche Energy Rating (Eas) :
- 750 mJ
- Drain Current-Max (Abs) (ID) :
- 13 A
- Product Type :
- MOSFET
- Vgs(th) (Max) @ Id :
- 4.5V @ 4mA
- Height :
- 21.46 mm
- Operating Mode :
- ENHANCEMENT MODE
- Polarity/Channel Type :
- N-Channel
- Terminal Position :
- Single
- Transistor Type :
- 1 N-Channel
- Manufacturer :
- IXYS
- Transistor Application :
- SWITCHING
- Length :
- 16.26 mm
- Mount :
- Through Hole
- Package / Case :
- TO-247-3
- Power Dissipation (Max) :
- 250W (Tc)
- Power Dissipation-Max (Abs) :
- 250 W
- Reach Compliance Code :
- Compliant
- Published :
- 2000
- Package Shape :
- RECTANGULAR
- Power Dissipation :
- 250W
- DS Breakdown Voltage-Min :
- 800 V
- Gate to Source Voltage (Vgs) :
- 20V
- FET Type :
- N-Channel
- Width :
- 5.3 mm
- Vgs (Max) :
- ±20V
- Product Status :
- Obsolete
- RoHS :
- Details
- Configuration :
- Single
- Drain to Source Voltage (Vdss) :
- 800V
- JEDEC-95 Code :
- TO-247
- Package :
- Tube
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Mounting Type :
- Through Hole
- Terminal Form :
- THROUGH-HOLE
- Continuous Drain Current (ID) :
- 13A
- Operating Temperature :
- -55°C~150°C TJ
- Packaging :
- Tube
- Pin Count :
- 3
- Pulsed Drain Current-Max (IDM) :
- 52A
- Number of Terminals :
- 3
- Rise Time :
- 36ns
- Series :
- HiPerFET™
- Number of Terminations :
- 3
- Tradename :
- HyperFET
- Channel Mode :
- Enhancement
- Base Product Number :
- IXFH13
- Gate Charge (Qg) (Max) @ Vgs :
- 90nC @ 10V
- Element Configuration :
- Single
- Qualification Status :
- Not Qualified
- RoHS Status :
- RoHS Compliant
- Mounting Style :
- Through Hole
- Power Dissipation-Max :
- 250W Tc
- Minimum Operating Temperature :
- - 55 C
- Brand :
- IXYS
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Turn-Off Delay Time :
- 55 ns
- Datasheets
- IXFH13N80Q

N-Channel Tube 700m Ω @ 6.5A, 10V ±20V 3250pF @ 25V 90nC @ 10V 800V TO-247-3
IXFH13N80Q Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 750 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 3250pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 13A amps.In this device, the drain-source breakdown voltage is 800V and VGS=800V, so the drain-source breakdown voltage is 800V in this case.A device can conduct a maximum continuous current of [13 A] according to its drain current.It is [55 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 52A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.The DS breakdown voltage should be maintained above 800 V to maintain normal operation.To operate this transistor, you will need a 800V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
IXFH13N80Q Features
the avalanche energy rating (Eas) is 750 mJ
a continuous drain current (ID) of 13A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 55 ns
based on its rated peak drain current 52A.
a 800V drain to source voltage (Vdss)
IXFH13N80Q Applications
There are a lot of IXYS
IXFH13N80Q applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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