IXFH13N50

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Mfr.Part #
IXFH13N50
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 500V 13A TO247AD
Stock
2,194
In Stock :
2,194

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Input Capacitance (Ciss) (Max) @ Vds :
2800pF @ 25V
Operating Temperature :
-55°C~150°C TJ
Mounting Type :
Through Hole
Number of Pins :
3
JEDEC-95 Code :
TO-247
Additional Feature :
AVALANCHE RATED
Base Product Number :
IXFH13
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Gate to Source Voltage (Vgs) :
20V
Transistor Application :
SWITCHING
Moisture Sensitivity Level (MSL) :
Not Applicable
Fall Time (Typ) :
32 ns
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Vgs(th) (Max) @ Id :
4V @ 2.5mA
Current Rating :
13A
Package Shape :
RECTANGULAR
JESD-30 Code :
R-PSFM-T3
Manufacturer :
IXYS Corporation
Drain Current-Max (Abs) (ID) :
13 A
Drain to Source Voltage (Vdss) :
500V
Product Status :
Obsolete
Power Dissipation Ambient-Max :
180 W
Gate Charge (Qg) (Max) @ Vgs :
120nC @ 10V
Operating Mode :
ENHANCEMENT MODE
Case Connection :
DRAIN
Series :
HiPerFET™
Turn-Off Delay Time :
76 ns
Terminal Position :
Single
Terminal Form :
THROUGH-HOLE
Qualification Status :
Not Qualified
FET Feature :
--
Number of Elements :
1
Pin Count :
3
Number of Terminals :
3
Lead Free :
Lead Free
Power Dissipation-Max :
180W Tc
Drive Voltage (Max Rds On,Min Rds On) :
10V
Number of Terminations :
3
Drain-source On Resistance-Max :
0.4Ohm
FET Type :
N-Channel
Surface Mount :
No
RoHS Status :
RoHS Compliant
Power Dissipation :
180W
Continuous Drain Current (ID) :
13A
Rise Time :
27ns
DS Breakdown Voltage-Min :
500 V
Transistor Element Material :
SILICON
Vgs (Max) :
±20V
JESD-609 Code :
e1
Drain to Source Breakdown Voltage :
500V
Package :
Tube
Pulsed Drain Current-Max (IDM) :
52A
Configuration :
SINGLE WITH BUILT-IN DIODE
Published :
2000
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Rds On (Max) @ Id, Vgs :
400m Ω @ 6.5A, 10V
Reach Compliance Code :
Compliant
Polarity/Channel Type :
N-Channel
Power Dissipation (Max) :
180W (Tc)
Current - Continuous Drain (Id) @ 25°C :
13A Tc
Power Dissipation-Max (Abs) :
180 W
Package / Case :
TO-247-3
Element Configuration :
Single
Mount :
Through Hole
Packaging :
Tube
Voltage - Rated DC :
500V
Supplier Device Package :
TO-247AD (IXFH)
Datasheets
IXFH13N50
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFH13N50 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, Number of Pins:3, Number of Terminations:3, Package / Case:TO-247-3, IXFH13N50 pinout, IXFH13N50 datasheet PDF, IXFH13N50 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFH13N50 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFH13N50


N-Channel Tube 400m Ω @ 6.5A, 10V ±20V 2800pF @ 25V 120nC @ 10V 500V TO-247-3

IXFH13N50 Overview


CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 2800pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 500V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 500V.There is no drain current on this device since the maximum continuous current it can conduct is 13 A.As a result of its turn-off delay time, which is 76 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 52A, its maximum pulsed drain current.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In order for DS breakdown voltage to remain above 500 V, it should remain above the 500 V level.The transistor must receive a 500V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

IXFH13N50 Features


a continuous drain current (ID) of 13A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 76 ns
based on its rated peak drain current 52A.
a 500V drain to source voltage (Vdss)


IXFH13N50 Applications


There are a lot of IXYS
IXFH13N50 applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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