IXFH13N100
- Mfr.Part #
- IXFH13N100
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 1000V 12.5A TO247AD
- Stock
- 22,209
- In Stock :
- 22,209
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Vgs(th) (Max) @ Id :
- 4.5V @ 4mA
- Turn-Off Delay Time :
- 62 ns
- Number of Terminals :
- 3
- Gate to Source Voltage (Vgs) :
- 20V
- Transistor Polarity :
- N-Channel
- Length :
- 16.26 mm
- Power Dissipation (Max) :
- 300W (Tc)
- Mount :
- Through Hole
- Mounting Type :
- Through Hole
- Number of Terminations :
- 3
- Drain to Source Breakdown Voltage :
- 1kV
- Supplier Device Package :
- TO-247AD (IXFH)
- Polarity/Channel Type :
- N-Channel
- Vgs (Max) :
- ±20V
- Qualification Status :
- Not Qualified
- Maximum Operating Temperature :
- + 150 C
- Power Dissipation :
- 300W
- Tradename :
- HyperFET
- Package Shape :
- RECTANGULAR
- Product Category :
- MOSFET
- Package :
- Tube
- Pbfree Code :
- yes
- Pulsed Drain Current-Max (IDM) :
- 50A
- Number of Elements :
- 1
- Brand :
- IXYS
- Subcategory :
- MOSFETs
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Drain to Source Voltage (Vdss) :
- 1000V
- Fall Time (Typ) :
- 32 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 155nC @ 10V
- Series :
- HiPerFET™
- Number of Pins :
- 3
- Package / Case :
- TO-247-3
- Base Product Number :
- IXFH13
- Rds On (Max) @ Id, Vgs :
- 900m Ω @ 500mA, 10V
- Lead Free :
- Lead Free
- Product Status :
- Active
- Product Type :
- MOSFET
- Published :
- 2000
- Element Configuration :
- Single
- Transistor Element Material :
- SILICON
- RoHS Status :
- ROHS3 Compliant
- JEDEC-95 Code :
- TO-247
- DS Breakdown Voltage-Min :
- 1000 V
- Number of Channels :
- 1 Channel
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Transistor Application :
- SWITCHING
- Surface Mount :
- No
- Operating Temperature :
- -55°C~150°C TJ
- Manufacturer :
- IXYS
- Transistor Type :
- 1 N-Channel
- Rise Time :
- 33ns
- JESD-30 Code :
- R-PSFM-T3
- Channel Mode :
- Enhancement
- Configuration :
- Single
- Width :
- 5.3 mm
- Terminal Position :
- Single
- Height :
- 21.46 mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pin Count :
- 3
- Additional Feature :
- AVALANCHE RATED
- Power Dissipation-Max :
- 300W Tc
- Terminal Form :
- THROUGH-HOLE
- RoHS :
- Details
- FET Type :
- N-Channel
- Case Connection :
- DRAIN
- Operating Mode :
- ENHANCEMENT MODE
- Mounting Style :
- Through Hole
- Current - Continuous Drain (Id) @ 25°C :
- 12.5A Tc
- Continuous Drain Current (ID) :
- 12.5A
- Reach Compliance Code :
- Compliant
- FET Feature :
- --
- Input Capacitance (Ciss) (Max) @ Vds :
- 4000pF @ 25V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Drain-source On Resistance-Max :
- 0.9Ohm
- Minimum Operating Temperature :
- - 55 C
- Packaging :
- Tube
- Datasheets
- IXFH13N100

N-Channel Tube 900m Ω @ 500mA, 10V ±20V 4000pF @ 25V 155nC @ 10V 1000V TO-247-3
IXFH13N100 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 4000pF @ 25V.This device conducts a continuous drain current (ID) of 12.5A, which is the maximum continuous current transistor can conduct.Using VGS=1kV and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 1kV (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 62 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 50A.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.A normal operation of the DS requires keeping the breakdown voltage above 1000 V.This transistor requires a drain-source voltage (Vdss) of 1000V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IXFH13N100 Features
a continuous drain current (ID) of 12.5A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 62 ns
based on its rated peak drain current 50A.
a 1000V drain to source voltage (Vdss)
IXFH13N100 Applications
There are a lot of IXYS
IXFH13N100 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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