IXFH13N100

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Mfr.Part #
IXFH13N100
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 1000V 12.5A TO247AD
Stock
22,209
In Stock :
22,209

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Vgs(th) (Max) @ Id :
4.5V @ 4mA
Turn-Off Delay Time :
62 ns
Number of Terminals :
3
Gate to Source Voltage (Vgs) :
20V
Transistor Polarity :
N-Channel
Length :
16.26 mm
Power Dissipation (Max) :
300W (Tc)
Mount :
Through Hole
Mounting Type :
Through Hole
Number of Terminations :
3
Drain to Source Breakdown Voltage :
1kV
Supplier Device Package :
TO-247AD (IXFH)
Polarity/Channel Type :
N-Channel
Vgs (Max) :
±20V
Qualification Status :
Not Qualified
Maximum Operating Temperature :
+ 150 C
Power Dissipation :
300W
Tradename :
HyperFET
Package Shape :
RECTANGULAR
Product Category :
MOSFET
Package :
Tube
Pbfree Code :
yes
Pulsed Drain Current-Max (IDM) :
50A
Number of Elements :
1
Brand :
IXYS
Subcategory :
MOSFETs
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Drain to Source Voltage (Vdss) :
1000V
Fall Time (Typ) :
32 ns
Gate Charge (Qg) (Max) @ Vgs :
155nC @ 10V
Series :
HiPerFET™
Number of Pins :
3
Package / Case :
TO-247-3
Base Product Number :
IXFH13
Rds On (Max) @ Id, Vgs :
900m Ω @ 500mA, 10V
Lead Free :
Lead Free
Product Status :
Active
Product Type :
MOSFET
Published :
2000
Element Configuration :
Single
Transistor Element Material :
SILICON
RoHS Status :
ROHS3 Compliant
JEDEC-95 Code :
TO-247
DS Breakdown Voltage-Min :
1000 V
Number of Channels :
1 Channel
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Transistor Application :
SWITCHING
Surface Mount :
No
Operating Temperature :
-55°C~150°C TJ
Manufacturer :
IXYS
Transistor Type :
1 N-Channel
Rise Time :
33ns
JESD-30 Code :
R-PSFM-T3
Channel Mode :
Enhancement
Configuration :
Single
Width :
5.3 mm
Terminal Position :
Single
Height :
21.46 mm
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Pin Count :
3
Additional Feature :
AVALANCHE RATED
Power Dissipation-Max :
300W Tc
Terminal Form :
THROUGH-HOLE
RoHS :
Details
FET Type :
N-Channel
Case Connection :
DRAIN
Operating Mode :
ENHANCEMENT MODE
Mounting Style :
Through Hole
Current - Continuous Drain (Id) @ 25°C :
12.5A Tc
Continuous Drain Current (ID) :
12.5A
Reach Compliance Code :
Compliant
FET Feature :
--
Input Capacitance (Ciss) (Max) @ Vds :
4000pF @ 25V
Drive Voltage (Max Rds On,Min Rds On) :
10V
Drain-source On Resistance-Max :
0.9Ohm
Minimum Operating Temperature :
- 55 C
Packaging :
Tube
Datasheets
IXFH13N100
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFH13N100 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Number of Terminations:3, Number of Pins:3, Package / Case:TO-247-3, Number of Channels:1 Channel, Operating Temperature:-55°C~150°C TJ, IXFH13N100 pinout, IXFH13N100 datasheet PDF, IXFH13N100 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFH13N100 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFH13N100


N-Channel Tube 900m Ω @ 500mA, 10V ±20V 4000pF @ 25V 155nC @ 10V 1000V TO-247-3

IXFH13N100 Overview


As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 4000pF @ 25V.This device conducts a continuous drain current (ID) of 12.5A, which is the maximum continuous current transistor can conduct.Using VGS=1kV and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 1kV (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 62 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 50A.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.A normal operation of the DS requires keeping the breakdown voltage above 1000 V.This transistor requires a drain-source voltage (Vdss) of 1000V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

IXFH13N100 Features


a continuous drain current (ID) of 12.5A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 62 ns
based on its rated peak drain current 50A.
a 1000V drain to source voltage (Vdss)


IXFH13N100 Applications


There are a lot of IXYS
IXFH13N100 applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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