IXFH13N100

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Mfr.Part #
IXFH13N100
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 1000V 12.5A TO247AD
Stock
22,209
In Stock :
22,209

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Power Dissipation (Max) :
300W (Tc)
Configuration :
Single
Package / Case :
TO-247-3
Gate Charge (Qg) (Max) @ Vgs :
155nC @ 10V
DS Breakdown Voltage-Min :
1000 V
Mount :
Through Hole
Vgs(th) (Max) @ Id :
4.5V @ 4mA
Number of Terminations :
3
Polarity/Channel Type :
N-Channel
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Operating Temperature :
-55°C~150°C TJ
Manufacturer :
IXYS
Operating Mode :
ENHANCEMENT MODE
Lead Free :
Lead Free
Fall Time (Typ) :
32 ns
Transistor Polarity :
N-Channel
Qualification Status :
Not Qualified
Transistor Type :
1 N-Channel
Transistor Application :
SWITCHING
Product Category :
MOSFET
Supplier Device Package :
TO-247AD (IXFH)
Drain-source On Resistance-Max :
0.9Ohm
JEDEC-95 Code :
TO-247
Tradename :
HyperFET
Number of Pins :
3
Case Connection :
DRAIN
Pbfree Code :
yes
Series :
HiPerFET™
Transistor Element Material :
SILICON
Drain to Source Breakdown Voltage :
1kV
Height :
21.46 mm
Number of Elements :
1
Pulsed Drain Current-Max (IDM) :
50A
Product Status :
Active
Pin Count :
3
Channel Mode :
Enhancement
Rise Time :
33ns
Terminal Form :
THROUGH-HOLE
Power Dissipation-Max :
300W Tc
Length :
16.26 mm
RoHS Status :
ROHS3 Compliant
Power Dissipation :
300W
Mounting Type :
Through Hole
Reach Compliance Code :
Compliant
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
FET Feature :
--
Number of Terminals :
3
Packaging :
Tube
Additional Feature :
AVALANCHE RATED
Package :
Tube
Surface Mount :
No
Minimum Operating Temperature :
- 55 C
FET Type :
N-Channel
Terminal Position :
Single
Package Shape :
RECTANGULAR
Current - Continuous Drain (Id) @ 25°C :
12.5A Tc
Number of Channels :
1 Channel
RoHS :
Details
Input Capacitance (Ciss) (Max) @ Vds :
4000pF @ 25V
Drive Voltage (Max Rds On,Min Rds On) :
10V
Brand :
IXYS
Drain to Source Voltage (Vdss) :
1000V
Base Product Number :
IXFH13
Continuous Drain Current (ID) :
12.5A
Element Configuration :
Single
Published :
2000
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Gate to Source Voltage (Vgs) :
20V
Vgs (Max) :
±20V
Subcategory :
MOSFETs
Width :
5.3 mm
Maximum Operating Temperature :
+ 150 C
Mounting Style :
Through Hole
Product Type :
MOSFET
Rds On (Max) @ Id, Vgs :
900m Ω @ 500mA, 10V
JESD-30 Code :
R-PSFM-T3
Turn-Off Delay Time :
62 ns
Datasheets
IXFH13N100
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFH13N100 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-247-3, Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, Number of Pins:3, Mounting Type:Through Hole, Number of Channels:1 Channel, IXFH13N100 pinout, IXFH13N100 datasheet PDF, IXFH13N100 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFH13N100 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFH13N100


N-Channel Tube 900m Ω @ 500mA, 10V ±20V 4000pF @ 25V 155nC @ 10V 1000V TO-247-3

IXFH13N100 Overview


As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 4000pF @ 25V.This device conducts a continuous drain current (ID) of 12.5A, which is the maximum continuous current transistor can conduct.Using VGS=1kV and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 1kV (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 62 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 50A.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.A normal operation of the DS requires keeping the breakdown voltage above 1000 V.This transistor requires a drain-source voltage (Vdss) of 1000V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

IXFH13N100 Features


a continuous drain current (ID) of 12.5A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 62 ns
based on its rated peak drain current 50A.
a 1000V drain to source voltage (Vdss)


IXFH13N100 Applications


There are a lot of IXYS
IXFH13N100 applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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