IXFH13N100
- Mfr.Part #
- IXFH13N100
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 1000V 12.5A TO247AD
- Stock
- 22,209
- In Stock :
- 22,209
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation (Max) :
- 300W (Tc)
- Configuration :
- Single
- Package / Case :
- TO-247-3
- Gate Charge (Qg) (Max) @ Vgs :
- 155nC @ 10V
- DS Breakdown Voltage-Min :
- 1000 V
- Mount :
- Through Hole
- Vgs(th) (Max) @ Id :
- 4.5V @ 4mA
- Number of Terminations :
- 3
- Polarity/Channel Type :
- N-Channel
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Operating Temperature :
- -55°C~150°C TJ
- Manufacturer :
- IXYS
- Operating Mode :
- ENHANCEMENT MODE
- Lead Free :
- Lead Free
- Fall Time (Typ) :
- 32 ns
- Transistor Polarity :
- N-Channel
- Qualification Status :
- Not Qualified
- Transistor Type :
- 1 N-Channel
- Transistor Application :
- SWITCHING
- Product Category :
- MOSFET
- Supplier Device Package :
- TO-247AD (IXFH)
- Drain-source On Resistance-Max :
- 0.9Ohm
- JEDEC-95 Code :
- TO-247
- Tradename :
- HyperFET
- Number of Pins :
- 3
- Case Connection :
- DRAIN
- Pbfree Code :
- yes
- Series :
- HiPerFET™
- Transistor Element Material :
- SILICON
- Drain to Source Breakdown Voltage :
- 1kV
- Height :
- 21.46 mm
- Number of Elements :
- 1
- Pulsed Drain Current-Max (IDM) :
- 50A
- Product Status :
- Active
- Pin Count :
- 3
- Channel Mode :
- Enhancement
- Rise Time :
- 33ns
- Terminal Form :
- THROUGH-HOLE
- Power Dissipation-Max :
- 300W Tc
- Length :
- 16.26 mm
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation :
- 300W
- Mounting Type :
- Through Hole
- Reach Compliance Code :
- Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- FET Feature :
- --
- Number of Terminals :
- 3
- Packaging :
- Tube
- Additional Feature :
- AVALANCHE RATED
- Package :
- Tube
- Surface Mount :
- No
- Minimum Operating Temperature :
- - 55 C
- FET Type :
- N-Channel
- Terminal Position :
- Single
- Package Shape :
- RECTANGULAR
- Current - Continuous Drain (Id) @ 25°C :
- 12.5A Tc
- Number of Channels :
- 1 Channel
- RoHS :
- Details
- Input Capacitance (Ciss) (Max) @ Vds :
- 4000pF @ 25V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Brand :
- IXYS
- Drain to Source Voltage (Vdss) :
- 1000V
- Base Product Number :
- IXFH13
- Continuous Drain Current (ID) :
- 12.5A
- Element Configuration :
- Single
- Published :
- 2000
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Gate to Source Voltage (Vgs) :
- 20V
- Vgs (Max) :
- ±20V
- Subcategory :
- MOSFETs
- Width :
- 5.3 mm
- Maximum Operating Temperature :
- + 150 C
- Mounting Style :
- Through Hole
- Product Type :
- MOSFET
- Rds On (Max) @ Id, Vgs :
- 900m Ω @ 500mA, 10V
- JESD-30 Code :
- R-PSFM-T3
- Turn-Off Delay Time :
- 62 ns
- Datasheets
- IXFH13N100

N-Channel Tube 900m Ω @ 500mA, 10V ±20V 4000pF @ 25V 155nC @ 10V 1000V TO-247-3
IXFH13N100 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 4000pF @ 25V.This device conducts a continuous drain current (ID) of 12.5A, which is the maximum continuous current transistor can conduct.Using VGS=1kV and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 1kV (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 62 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 50A.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.A normal operation of the DS requires keeping the breakdown voltage above 1000 V.This transistor requires a drain-source voltage (Vdss) of 1000V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IXFH13N100 Features
a continuous drain current (ID) of 12.5A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 62 ns
based on its rated peak drain current 50A.
a 1000V drain to source voltage (Vdss)
IXFH13N100 Applications
There are a lot of IXYS
IXFH13N100 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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